Crystal growing apparatus

Claim 2

A crystal growing apparatus comprising: a vacuum chamber; a crystal substrate located within said vacuum chamber to be subjected to crystal growth; a Knudsen cell source of the surface ionization type for irradiating an ion beam onto said crystal substrate; ion detector means for detecting the quantity of the ion beam irradiated from said ion source; focusing means for focusing said ion beam onto said crystal substrate; beam deflector means for scanning the focused ion beam on said crystal substrate; means for generating an electron beam for neutralizing said ion beam on said crystal substrate; detector means for detecting the ratio of the partial pressures of the molecules within said vacuum chamber; and signal generator means operatively connected to said ion detector means and said detector means for detecting the ratio of partial pressures for generating control signals for controlling the crystal growth, in accordance with the output from said ion detector means and the output from said detector means for detecting the ratio of partial pressures, whereby said crystal is so grown as to have a two-dimensional distribution of concentrations of the molecules by the scanning of said ion beam on said crystal substrate.

Claim 3

An apparatus as defined in claim 1, further comprising molecular beam-generating means to further irradiate a neutral molecular beam onto said crystal substrate, whereby the crystal growth is accelerated.

Claim 4

A crystal growing apparatus comprising: a vacuum chamber; a crystal substrate located within said vacuum chamber to be subjected to crystal growth; a Knudsen cell source of the surface ionization type consisting of a plurality of cells and for irradiating a plurality of ion beams onto said crystal substrate; first ion detector means for detecting the quantity of ions of each of said plurality of ion beams; focusing means for focusing said ion beams onto said crystal substrate; beam deflector means for scanning the focused ion beam on said crystal substrate; second ion detector means for detecting the total quantity of ions of said plurality of ion beams; means for generating an electron beam for neutralizing said focused ion beam on said crystal substrate; detector means for detecting the ratio of the partial pressures of the molecules within said vacuum chamber; means for receiving the outputs from said first and second ion detector means and for evaluating the ratio between said total quantity of ions and said quantity of ions of said each ion beam; and signal generator means operatively connected to said means for evaluating the ratio between said total quantity of ions and said quantity of ions of said each ion beam and said detector means for detecting the ratio of the partial pressures for generating control signals for controlling the crystal growth, in accordance with the output from said means for evaluating the ratio between the quantities of ions and an output from said detector means for detecting the ratio of partial pressures, whereby the crystal is so grown as to have a two-dimensional distribution of concentrations of the molecules by the scanning of said focused ion beam.

Claim 5

A crystal growing apparatus comprising: a vacuum chamber; a crystal substrate located within said vacuum chamber to be subjected to crystal growth; a Knudsen cell source of the surface ionization type consisting of a plurality of cells and for irradiating a plurality of ion beams onto said crystal substrate; first ion detector means for detecting the quantity of ions of each of said plurality of ion beams; focusing means for focusing said ion beams onto said crystal substrate; beam deflector means for scanning the focused ion beam on said crystal substrate; second ion detector means for detecting the total quantity of ions of said plurality of ion beams; means for generating an electron beam for neutralizing said focused ion beam on said crystal substrate; detector means for detecting the ratio of the partial pressures of the molecules within said vacuum chamber; means for receiving the outputs from said first and second ion detector means and for evaluating the ratio between said total quantity of ions and said quantity of ions of said each ion beam; and signal generator means operatively connected to said means for evaluating the ratio between said total quantity of ions and said quantity of ions of said each ion beam and said detector means for detecting the ratio of the partial pressures for generating control signals for controlling the crystal growth, in accordance with the output from said means for evaluating the ratio between the quantities of ions and an output from said detector means for detecting the ratio of partial pressures, whereby the crystal is so grown as to have a two-dimensional distribution of concentrations of the molecules by the scanning of said focused ion beam.

Claim 6

An apparatus as defined in claim 3, further comprising molecular beam-generating means to further irradiate a neutral molecular beam onto said crystal substrate, whereby the crystal growth is Accelerated.

Claim 7

An apparatus as defined in claim 3, further comprising display means receiving as its input, the output from said means for evaluating the ratio between the quantities of ions, the output of said display means being swept in synchronism with the scanning of said focused ion beam by said beam deflector means.

Claim 8

A crystal growing apparatus comprising: a vacuum chamber within which a crystal substrate to be grown may be disposed; first means for irradiating a crystal substrate disposed within said chamber with particles of opposite charge by at least one ion beam; second means, coupled to said first means, for detecting the magnitude of said at least one ion beam; third means, coupled to said chamber, for detecting the ratio of the partial pressures of molecules within said chamber; and fourth means, coupled to said second and third means, for controlling the irradiation of said at least one ion beam by said first means in accordance with the outputs of said second and third means, whereby a resulting neutralized particle is grown upon the surface of said substrate.

Claim 9

A crystal growing apparatus comprising: a vacuum chamber within which a crystal substrate to be grown may be disposed; first means for irradiating a crystal substrate disposed within said chamber with particles of opposite charge by at least one ion beam; second means, coupled to said first means, for detecting the magnitude of said at least one ion beam; third means, coupled to said chamber, for detecting the ratio of the partial pressures of molecules within said chamber; and fourth means, coupled to said second and third means, for controlling the irradiation of said at least one ion beam by said first means in accordance with the outputs of said second and third means, whereby a resulting neutralized particle is grown upon the surface of said substrate.

Claim 10

An apparatus according to claim 6, wherein said first means further includes means for focusing said at least one ion beam onto said substrate and for scanning the focused ion beam on said crystal substrate.

Claim 11

An apparatus according to claim 6, wherein said first means comprises means for irradiating said substrate with a plurality of ion beams.

Claim 12

An apparatus according to claim 8, wherein said second means detect the respective magnitudes of each of said ion beams of said plurality, and said apparatus further comprises fifth means for detecting the total quantity of ions of said plurality of beams, and sixth means, coupled to the outputs of said second and fifth means, for providing a signal representative of the ratio between said total quantity of ions and the quantity of ions of each ion beam, wherein said fourth means is coupled to said third and sixth means for controlling the irradiation of said ion beams by said first means in accordance with the outputs of said third and sixth means.

Claim 13

An apparatus according to claim 6, wherein said first means for irradiating said crystal substrate commprises a Knudsen cell source of the surface ionization type having a plurality of cells therein for irradiating said substrate with a plurality of ion beams.

Claim 14

An apparatus according to claim 7, further comprising display means, responsive to the output of said second means, and being synchronized with said scanning means, for displaying the output of said second means, whereby the ion beam concentration can be observed.

Claim 15

An apparatus according to claim 6, further comprising means responsive to the output of said fourth means, for controlling the temperature of said crystal substrate.

Claim 16

An apparatus according to claim 6, further comprising seventh means, coupled to said first and fourth means, for controlling the quantity of said at least one ion beam, and eighth means, coupled to said crystal substrate and said fourth means, for controlling the temperature of said substrate, wherein said fourth means applies a signal to at least one of said seventh and eighth means as a function of the outputs of said second and third means such that crystal growth on said substrate proceeds in accordance with the crystal growth conditions of quantity of said at least one ion beam and temperature of said substrate.

Claim 17

An apparatus according to claim 9, further comprising seventh means, coupled to said first and fourth means, for controlling the quantity of said plurality of ion beams, and eighth means, coupled to said crystal substrate and said fourth means, for controlling the temperature of said substrate, wherein said fourth means applies a signal to at least one of said seventh and eighth means as a function of the outputs of said third and sixth means such that crystal growth on said substrate proceeds in accordAnce with the crystal growth conditions of quantity of said plurality of ion beams and temperature of said substrate.

Claim 18

An apparatus according to claim 9, wherein said first means further includes means for focusing said ion beams onto said crystal substrate scanning for acanning said focused beams in said crystal substrate.

Claim 19

An apparatus according to claim 6, said first means further includes means for accelerating crystal growth of said substrate by irradiating said substrate with a neutral molecular beam.

Claim 20

An apparatus according to claim 8, wherein said first means for irradiating said crystal substrate with a plurality of ion beams comprises a Knudsen cell source of the surface ionization type having a plurality of cells therein.

Claim 21

An apparatus according to claim 15, further comprising eighth means, responsive to the output of said sixth means, and being synchronized with said scanning means, for displaying the output of said sixth means, whereby the ion beam concentration can be observed.

Claim 22

An apparatus according to claim 9, further comprising means responsive to the output of said sixth means, for controlling the temperature of said crystal substrate.