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US3904879A
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Photovoltaic infra-red detector
Assignee: Societe Anonyme de Telecommunications SAT
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Filing: 1974-04-08
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Granted: 1975-09-09
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Expires: 1994-04-08
Abstract
Abstract An elementary detector of infra-red radiation having a wavelength of 9-15 Mu , comprising a semiconductor material having an n-type region and a p-type region separated by a junction plane, the sensitive surface of the detector being perpendicular to said junction plane, wherein the inverse impedance of the detector is high due to the fact that the area of said sensitive surface exceeds the area of said junction plane.
Inventors
- 👤 Daniel Amingual
- 👤 Thuoc Nguyen Duy
- 👤 Yves Riant
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:54
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10F19/00; H10F19/20; H10F30/2218; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
63 words
A PHOTOVOLTAIC DETECTOR OF INFRA-RED RADIATION HAVVING A WAVELENGTH OF 9-15 U, COMPRISING A SEMICONDUCTOR MATERIAL HAVING AN N-TYPE AND A P-TYPE REGION SEPARATED BY A JUNCTION PLANE, THE SENSITIVE SURFACE OF THE DETECTOR BEING PERPENDICULAR TO SAID JUNCTION PLANE AND THE AREA OF SAID SENSIVITIVE SURFACE EXCEEDING THE AREA OF SAID JUNCTION PLANE RESULTING IN A HIGH INVERSE IMPEDANCE OF THE DETECTOR.
Claim 2
Dependent Claim
63 words
A PHOTOVOLTAIC DETECTOR OF INFRA-RED RADIATION HAVVING A WAVELENGTH OF 9-15 U, COMPRISING A SEMICONDUCTOR MATERIAL HAVING AN N-TYPE AND A P-TYPE REGION SEPARATED BY A JUNCTION PLANE, THE SENSITIVE SURFACE OF THE DETECTOR BEING PERPENDICULAR TO SAID JUNCTION PLANE AND THE AREA OF SAID SENSIVITIVE SURFACE EXCEEDING THE AREA OF SAID JUNCTION PLANE RESULTING IN A HIGH INVERSE IMPEDANCE OF THE DETECTOR.
Claim 3
Dependent Claim
70 words
A photovoltaic detector of infra-red radiation comprising a plurality of elementary detectors according to claim 1, assembled in such manner as to constitute a superposition of an even number of alternately n and p layers, wherein every other junction is electrically short-circuited and one of the output connections of said detector is secured to the first layer and the other to the last layer of the superposition of the layers.
Claim 4
Dependent Claim
69 words
A photovoltaic detector of infra-red radiation comprising a plurality of elementary detectors according to claim 1 assembled in such manner as to form a superposition of an even number of alternately n and p layers, wherein one of the output connections is secured to the first layer and the other to the last layer of the superposition of layers and the layers of the same type are electrically interconnected.
Claim 5
Dependent Claim
18 words
A photovoltaic detector of infra-red radiation according to claim 1, wherein the semiconductor material is Hg Cd Te.
Claim 6
Dependent Claim
18 words
A photovoltaic detector of infra-red radiation according to claim 1, wherein the semiconductor material is Pb Sn Te.
Claim 7
Dependent Claim
18 words
A photovoltaic detector of infra-red radiation according to claim 1, wherein the semiconductor material is Pb Sn Se.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-08 | 1979-03-10 | 1979-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-08 | 1983-03-10 | 1983-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-08 | 1987-03-10 | 1987-09-09 | $7700.00 | Window Closed / Lapsed |