Transistor with high current density

Claim 2

A continuously controllable transistor comprising a first emitter zone, a base zone, a collector zone and a second emitter zone successively superposed one on the other, a collector-base barrier layer disposed between said base zone and said collector zone, means for applying a voltage across said superposed zones with increased current density in the collector-base barrier layer, in which, when in operation, the ratio of the current of charged particles of one conductivity type (i1), from the base zone to the collector zone, to the current of charged particles of the other conductivity type (i2), from the collector zone to the base zone, approximately equals the ratio of the drift velocities of the particles of said one conductivity type and of said other conductivity type in the collector-base barrier layer.

Claim 3

The transistor of claim 1, including internal inherent regulation means therein for regulating the ratio of the two currents (i1, i2) so as to be approximately equal to the ratio of the drift velocities of said one conductivity type and of said other conductivity type.

Claim 4

The transistor of claim 2, including a control emitter zone emitting current of charged particles of said other conductivity type (i2), said control emitter zone being located on the side of the collector zone remote from the base zone, and having a conductivity type which is the opposite of the conductivity type of the collector zone.

Claim 5

The transistor of claim 1, wherein the collector has a resistance that is so low that a collector current released by a control voltage applied to the collector produces, at the collector resistance, a voltage drop smaller than the amount of said control voltage.

Claim 6

The transistor of claim 4, wherein the voltage drop at the collector resistance is smaller than one-third of the control voltage.

Claim 7

The Transistor of claim 1, wherein the base side of the collector-base barrier layer has a space charge zone having a combination center density greater than in regions surrounding the same.

Claim 8

A circuit arrangement for operating a continuously controllable transistor comprising a first emitter zone, a base zone, a collector zone and a second emitter zone successively superimposed one on the other, a collector-base barrier layer disposed between said base zone and said collector zone, means for applying a voltage across said superposed zones with increased current density in the collector-base barrier layer, in which, when in operation, the ratio of the current of charged particles of one conductivity type (i1), from the base zone to the collector zone, to the current of charged particles of the other conductivity type (i2), from the collector zone to the base zone, approximately equals the ratio of the drift velocities of the particles of said one conductivity type and other conductivity type in the collector-base barrier layer, said control emitter zone being actuable for controlling the transistor.

Claim 9

A circuit arrangement for operating a continuously controllable transistor comprising a first emitter zone, a base zone, a collector zone and a second emitter zone successively superimposed one on the other, a collector-base barrier layer disposed between said base zone and said collector zone, means for applying a voltage across said superposed zones with increased current density in the collector-base barrier layer, in which, when in operation, the ratio of the current of charged particles of one conductivity type (i1), from the base zone to the collector zone, to the current of charged particles of the other conductivity type (i2), from the collector zone to the base zone, approximately equals the ratio of the drift velocities of the particles of said one conductivity type and other conductivity type in the collector-base barrier layer, said control emitter zone being actuable for controlling the transistor.

Claim 10

The circuit of claim 7, including means for taking off an output signal at the first emitter zone.

Claim 11

The circuit of claim 7 wherein the collector zone is AC wise at ground potential.