US3899372A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for controlling insulating film thickness across a semiconductor wafer
Assignee: International Business Machines Corp
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Filing: 1973-10-31
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Granted: 1975-08-12
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Expires: 1993-10-31
Abstract
Abstract The invention is a process of fabricating semiconductor devices including an insulating film across the surface that has a planar configuration. Alternatively, the film may be of uniform thickness and non-planar configuration. Both the planar and uniform thickness characteristics of the insulating film permit openings to be formed therein without over etching a defined surface area and conductors to be formed thereon without broadening. An important feature of the invention is utilizing the differential growth rate of films on semiconductor surfaces and/or selection of a suitable initial film thickness as a diffusion mask. The initial film thickness also contributes to a planar or uniform film thickness or other configuration across the device.
Inventors
- 👤 Ronald Philip Esch
- 👤 Patrick Chin-Sheng Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10D; H10D99/00; H10P14/6322; Y; Y10; Y10S; Y10S148/00; Y10S148/116; Y10S148/141
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
54 words
A PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF: A. DEPOSITING AN INITIAL INSULATING FILM ON THE SUFACE OF A SEMICONDUCTOR SUBSTRATE OF FIRST CONDUCTIVITY TYPE. B. FORMING OPENINGS IN THE INSULATING FILM TO EXPOSE THE SUBSTRATE SURFACE, C. FORMING REGIONS OF A SECOND CONDUCTIVITY TYPE WITHIN THE OPENINGS AND IN THE SUBSTRATE.
Claim 2
Dependent Claim
54 words
A PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF: A. DEPOSITING AN INITIAL INSULATING FILM ON THE SUFACE OF A SEMICONDUCTOR SUBSTRATE OF FIRST CONDUCTIVITY TYPE. B. FORMING OPENINGS IN THE INSULATING FILM TO EXPOSE THE SUBSTRATE SURFACE, C. FORMING REGIONS OF A SECOND CONDUCTIVITY TYPE WITHIN THE OPENINGS AND IN THE SUBSTRATE.
Claim 3
Dependent Claim
25 words
The process of claim 1 wherein the insulating film is reformed within the openings and across the wafer to be of substantially the same thickness.
Claim 4
Dependent Claim
32 words
The process of claim 1 wherein the substrate is P type silicon and the initial insulating film is silicon dioxide having a thickness of about 1000A to serve as a diffusant mask.
Claim 5
Dependent Claim
27 words
The process of claim 3 wherein the initial oxide thickness of 1000A is formed by thermal growth in dry oxygen at 1000 C for about 240 minutes.
Claim 6
Dependent Claim
49 words
The process of claim 4 wherein the process of reforming the oxide film in the opening comprises a 5 minute dry oxygen thermal growth cycle followed by a 125 minute wet steam and a final (5) minute dry oxygen thermal growth cycle all at a temperature of about 1000*C.
Claim 7
Dependent Claim
26 words
The process of claim 2 wherein the substrate is of P type silicon and the insulating film is silicon dioxide having a thickness of about 3000A.
Claim 8
Dependent Claim
95 words
A process for fabricating semiconductor devices comprising the steps of: a. depositing on a semiconductor substrate an initial insulating film of a selected thickness to achieve a final insulating film of a desired physical form, b. forming an opening In the insulating film, c. forming a diffused region in the semiconductor substrate and within the opening, d. reforming the insulating layer in the opening and on the wafer as a final insulating layer having a substantially planar surface, and e. forming an opening through the planar insulating film to attach an electrode to the substrate.
Claim 9
Dependent Claim
95 words
A process for fabricating semiconductor devices comprising the steps of: a. depositing on a semiconductor substrate an initial insulating film of a selected thickness to achieve a final insulating film of a desired physical form, b. forming an opening In the insulating film, c. forming a diffused region in the semiconductor substrate and within the opening, d. reforming the insulating layer in the opening and on the wafer as a final insulating layer having a substantially planar surface, and e. forming an opening through the planar insulating film to attach an electrode to the substrate.
Claim 10
Dependent Claim
22 words
The process of claim 7 wherein the initial insulating film thickness is selected to be of the order of 1000 to 3000A.
Claim 11
Dependent Claim
19 words
The process of claim 8 wherein the initial insulating film thickness is selected to serve as a diffusant mask.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-11 | 1979-02-10 | 1979-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-11 | 1983-02-10 | 1983-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-11 | 1987-02-10 | 1987-08-12 | $7700.00 | Window Closed / Lapsed |