Patent US3896543A successfully refreshed from Google Patents.
US3896543A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device encapsulation packages and arrangements and methods of forming the same
Assignee: UK Secretary of State for Defence
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Filing: 1973-07-23
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Granted: 1975-07-29
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Expires: 1993-07-23
Abstract
Abstract A semiconductor device encapsulation package suitable for party encapsulating a semiconductor device having an operating frequency of at least 10 Gigahertz comprises a piece of conducting material and a layer of glass-ceramic material deposited on the surface of said piece of conducting material, said layer being selectively etched to provide a post of glassceramic material surrounded by a wall of glass-ceramic material, wherein the nearest distance between said post and said wall is large compared with the dimensions of said post. The package may be used to encapsulate a semiconductor device by locating the semiconductor device adjacent to the post, electrically connecting a region of the post remote from the piece of conducting material to a region of the semiconductor device remote from the piece of conducting material and locating a cap on the wall, the cap being electrically connected to the post.
Inventors
- 👤 David John Colliver
- 👤 Stephen Edwin Gibbs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:39
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/02; H; H10; H10W; H10W72/00; H10W72/50; H10W74/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
251 words
A METHOD OF ENCAPSULATING A HIGH FREQUENCY SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF (A) DEPOSITING ON A PIECE OF CONDUCTING MATERIAL A GLASS OF A KIND WHICH IS CONVERTIBLE BY CONTROLLED HEAT TREATMENT TO FORM A GLASS-CERAMIC, (B) CONVERTING SAID GLASS INT A GLASS-CERAMIC LAYER OF UNIFORM THICKNESS BY A CONTROLLED HEAT TREATMENT THEREOF WHICH COMPRISES HEATING SAID GLASS TO THE NUCLEATION TEMPERATURE AT WHICH CRYSTAL NUCLEATION THEREOF BEGINS, MAINTAINING SAID GLASS AT SAID NUCLEATION TEMPERATURE FOR A PERIOD OF TIME, HEATING SAID GLASS FURTHER TO THE MAXIMUM TEMPERATURE AT WHICH CRYSTALLIZATION THEREOF OCCURS, MAINTAINING SAID GLASS AT SAID MAXIMUM CRYSTALLIZATION TEMPERATURE FOR A PERIOD OF TIME, AND SLOWLY COOLING SAID GLASS TO PRODUCE SAID GLASS-CERAMIC LAYER CONSISTING OF A TWO-PHASE MEDIUM OF A UNIFORMLY DISTRIBUTED CERAMIC MASS EMBEDDED WITHIN A GLASS BINDING MEDIUM, (C) DEPOSITING A LAYER OF RESIST MATERIAL ON SAID GLASS-CERAMIC LAYER, (D) DEPOSITING A MASK ON SAID LAYER OF RESIST MATERIAL, (E) CHANGING THE SOLUBILITY OF PARTS OF SAID LAYER OF RESIST MATERIAL BY EXPOSING SAID LAYER OF RESIST MATERIAL TO A SOLUBILITY CHANGING RADIATION THROUGH SAID MASK, (F) DISSOLVING AWAY THE SOLUBLE REGIONS OF SAID RESIST, (G) CHEMICALLY ETCHING SAID LAYER OF GLASS-CERAMIC THROUGH SAID DISSOLVED AWAY REGIONS TO FORM A PLURALITY OF GLASS-CERAMIC POSTS ON SAIDPIECE OF CONDUCTING MATERIAL, (H) MOUNTING AT LEAST ONE SEMICONDUCTOR DEVICE ON SAID CONDUCTING MATERIAL AT POSITIONS ADJACENT EACH OF SAID POSTS, AND (I) ELECTRICALLY CONNECTING THE PARTS OF SAID SEMICONDUCTOR DEVICES REMOTE FROM SAID CONDUCTING MATERIAL TO SAID POSTS.
Claim 2
Independent Claim
251 words
A METHOD OF ENCAPSULATING A HIGH FREQUENCY SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF (A) DEPOSITING ON A PIECE OF CONDUCTING MATERIAL A GLASS OF A KIND WHICH IS CONVERTIBLE BY CONTROLLED HEAT TREATMENT TO FORM A GLASS-CERAMIC, (B) CONVERTING SAID GLASS INT A GLASS-CERAMIC LAYER OF UNIFORM THICKNESS BY A CONTROLLED HEAT TREATMENT THEREOF WHICH COMPRISES HEATING SAID GLASS TO THE NUCLEATION TEMPERATURE AT WHICH CRYSTAL NUCLEATION THEREOF BEGINS, MAINTAINING SAID GLASS AT SAID NUCLEATION TEMPERATURE FOR A PERIOD OF TIME, HEATING SAID GLASS FURTHER TO THE MAXIMUM TEMPERATURE AT WHICH CRYSTALLIZATION THEREOF OCCURS, MAINTAINING SAID GLASS AT SAID MAXIMUM CRYSTALLIZATION TEMPERATURE FOR A PERIOD OF TIME, AND SLOWLY COOLING SAID GLASS TO PRODUCE SAID GLASS-CERAMIC LAYER CONSISTING OF A TWO-PHASE MEDIUM OF A UNIFORMLY DISTRIBUTED CERAMIC MASS EMBEDDED WITHIN A GLASS BINDING MEDIUM, (C) DEPOSITING A LAYER OF RESIST MATERIAL ON SAID GLASS-CERAMIC LAYER, (D) DEPOSITING A MASK ON SAID LAYER OF RESIST MATERIAL, (E) CHANGING THE SOLUBILITY OF PARTS OF SAID LAYER OF RESIST MATERIAL BY EXPOSING SAID LAYER OF RESIST MATERIAL TO A SOLUBILITY CHANGING RADIATION THROUGH SAID MASK, (F) DISSOLVING AWAY THE SOLUBLE REGIONS OF SAID RESIST, (G) CHEMICALLY ETCHING SAID LAYER OF GLASS-CERAMIC THROUGH SAID DISSOLVED AWAY REGIONS TO FORM A PLURALITY OF GLASS-CERAMIC POSTS ON SAIDPIECE OF CONDUCTING MATERIAL, (H) MOUNTING AT LEAST ONE SEMICONDUCTOR DEVICE ON SAID CONDUCTING MATERIAL AT POSITIONS ADJACENT EACH OF SAID POSTS, AND (I) ELECTRICALLY CONNECTING THE PARTS OF SAID SEMICONDUCTOR DEVICES REMOTE FROM SAID CONDUCTING MATERIAL TO SAID POSTS.
Claim 3
Dependent Claim
30 words
The method of encapsulating as claimed in claim 1 wherein the two periods of time recited in controlled heat treatment step (b) are each in the order of 1 hour.
Claim 4
Dependent Claim
24 words
The method of encapsulation as claimed in claim 1 including the step of electrically connecting said semiconductor devices to one another in electrical series.
Claim 5
Dependent Claim
24 words
The method of encapsulation as claimed in claim 21 including the step of electrically connecting said semiconductor devices to one another in electrical parallel.
Claim 6
Dependent Claim
57 words
The method of encapsulation as claimed in claim 1 wherein said steps (c) through (g) inclusive are so conducted as to leave also a glass-ceramic wall around said posts, said step of mounting each said at least one semiconductor device comprising mounting each said at least one device on said piece of conducting material within said wall.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-28 | 1979-01-27 | 1979-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-28 | 1983-01-27 | 1983-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-28 | 1987-01-27 | 1987-07-29 | $7700.00 | Window Closed / Lapsed |