US3896475A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device comprising resistance region having portions lateral to conductors
Assignee: US Philips Corp
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Filing: 1974-03-15
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Granted: 1975-07-22
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Expires: 1994-03-15
Abstract
Abstract A semiconductor device comprising a semiconductor body comprising a second conductivity type region and at least two active surface zones of opposite first conductivity type forming respective ph-junctions terminating at the body, a substantially strip-shaped resistance region at a surface portion removed from the surface zones and separated from remaining parts of the semiconductor body by a barrier layer, the resistance region comprising plural contact zones and connection zones in alternating positions along the longitudinal direction of the resistance region; plural conductive layers extending between and electrically connecting respective surface zones and contact zones; and a connection conductor contacting the resistance region at at least one of said connection zones.
Inventors
- 👤 Maurice Bonis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:28
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D84/125; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
141 words
A semiconductor device comprising: a. a semiconductor body having a first surface; b. a second conductivity type region located in said semiconductor body; c. at least two active surface zones of a first conductivity type located at said semiconductor body and adjoining said region, said zones and said region forming respective p,n junctions terminating at said surface; d. a substantially strip-shaped resistance region located at a portion of said surface removed from said zones and separated from remaining parts of said semiconductor body by a barrier layer, said resistance region comprising plural contact zones and at least one connection zone that are disposed at alternating spaced portions along the longitudinal direction of said resistance region; e. plural conductive layers extending between and electrically connecting respective said surface zones and said contact zones; and f. a connection conductor contacting said connection zones.
Claim 2
Dependent Claim
141 words
A semiconductor device comprising: a. a semiconductor body having a first surface; b. a second conductivity type region located in said semiconductor body; c. at least two active surface zones of a first conductivity type located at said semiconductor body and adjoining said region, said zones and said region forming respective p,n junctions terminating at said surface; d. a substantially strip-shaped resistance region located at a portion of said surface removed from said zones and separated from remaining parts of said semiconductor body by a barrier layer, said resistance region comprising plural contact zones and at least one connection zone that are disposed at alternating spaced portions along the longitudinal direction of said resistance region; e. plural conductive layers extending between and electrically connecting respective said surface zones and said contact zones; and f. a connection conductor contacting said connection zones.
Claim 3
Dependent Claim
41 words
A semiconductor device as claimed in claim 1, wherein said connection conductor has a substantially comb-shaped configuration and said first portion comprises teeth portions that are present at least partly between various said contact zones and that contact said connection zones.
Claim 4
Dependent Claim
19 words
A semiconductor device as claimed in claim 1, wherein said contact zones are substantially aligned with said connection zones.
Claim 5
Dependent Claim
52 words
A semiconductor device as claimed in claim 3, further comprising an apertured electrically insulating layer at least partly covering said resistance region, wherein said connection zones and contact zones are all present at a single elongated aperture in said insulating layer, said aperture extending along the longitudinal direction of said resistance region.
Claim 6
Dependent Claim
46 words
A semiconductor device as claimed in claim 1, wherein said resistance region is of one conductivity type and comprises a semiconductor region disposed at said surface, said resistance region forming with adjoining semiconductor material of an opposite conductivity type a p,n junction terminating at said surface.
Claim 7
Dependent Claim
67 words
A semiconductor device as claimed in claim 1, wherein said surface zones of said first conductivity type have a strip Configuration and are disposed in mutually substantially parallel arrangement, said surface zones comprising emitter zones of a transistor and being entirely surrounded within said semiconductor body by a base zone of said second conductivity type, said base zone adjoining a collector zone of said first conductivity type.
Claim 8
Dependent Claim
27 words
A semiconductor device as claimed in claim 6, wherein said longitudinal direction of said resistance region extends substantially normal to the longitudinal direction of said emitter zones.
Claim 9
Dependent Claim
52 words
A semiconductor device as claimed in claim 7, wherein said base zone and said collector zone form a p,n junction terminating at said surface and said resistance region comprises a strip-shaped surface region of said second conductivity type, said surface region being located outside said base zone and inside said collector zone.
Claim 10
Dependent Claim
35 words
A semiconductor device as claimed in claim 7, wherein said conductive layers individually connect respective groups of said emitter zones to respective common contact zones, said groups individually comprising at least two said emitter zones.
Claim 11
Dependent Claim
27 words
A semiconductor device as claimed in claim 1, wherein said resistance region has a width of at least about 6 microns and at most about 8 microns.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-21 | 1979-01-20 | 1979-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-21 | 1983-01-20 | 1983-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-21 | 1987-01-20 | 1987-07-22 | $7700.00 | Window Closed / Lapsed |