US3890176A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for removing photoresist from substrate
Assignee: General Electric Co
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Filing: 1973-12-17
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Granted: 1975-06-17
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Expires: 1993-12-17
Abstract
Abstract A solvent free method is provided for effecting the complete removal of photoresist from a substrate at temperatures up to about 260* C, utilizing in combination with a mixture of oxygen and ozone, an ultraviolet radiation discharge lamp capable of generating at least 100 milliwatts per square centimeter of ultraviolet light on the substrate surface.
Inventors
- 👤 Donald A Bolon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:26
CPC Classifications
B; B08; B08B; B08B7/00; B08B7/0035; B08B7/0057; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
21 words
IN THE METHOD FOR EFFECTING THE COMPLETE REMOVAL OF CARBONACEOUS MATERIAL FROM THE SURFACE OF A SUBSTRATE INVOLVING THE STEPS OF.
Claim 2
Dependent Claim
21 words
IN THE METHOD FOR EFFECTING THE COMPLETE REMOVAL OF CARBONACEOUS MATERIAL FROM THE SURFACE OF A SUBSTRATE INVOLVING THE STEPS OF.
Claim 3
Dependent Claim
12 words
PREHEATING THE SUBSTRATE TO A TEMPERATURE OF UP TO ABOUT 260*C, AND
Claim 4
Dependent Claim
12 words
PREHEATING THE SUBSTRATE TO A TEMPERATURE OF UP TO ABOUT 260*C, AND
Claim 5
Dependent Claim
110 words
SUBJECTING THE HEATED SUBSTRATE TO AN OXYGEN ATMOSPHERE CONTAINING A SMALL PERCENTAGE OF OZONE, THE IMPROVEMENT WHICH COMPRISES SIMULTANEOUSLY SUBJECTING THE SUBSTRATE WHILE IN AN UNHEATED STATE TO AN OXYGEN ATMOSPHERE CONTAINING AT LEAST 1/4 PERCENT BY WEIGHT OF OZONE AND RADIANT ENERGY HAVING A WAVELENTH OF FROM 1800A TO 3500A ANDAN INTENSITY OF AT LEAST 100 MILLIWATTS, WHEREBY COMPLETE REMOVAL OF THECARBONACEOUS MATERIAL FROM THE SURFACE OF THE SUBSTRATE IS EFFECTED IN LESS TIME AND THE REQUIREMENT OF PREHEATING THE SUBSTRATE AND MAINTAINING IT AT AN EFFECTIVE CARBONACEOUS TO THE OXYGEN ATMOSPHERE CONTURE PRIOR TO ITS EXPOSURE TO THE OXYGEN ATMOSHPERE CONTAINING A SMALL PERCENTAGE OF OZONE IS ELIMINATED.
Claim 6
Dependent Claim
110 words
SUBJECTING THE HEATED SUBSTRATE TO AN OXYGEN ATMOSPHERE CONTAINING A SMALL PERCENTAGE OF OZONE, THE IMPROVEMENT WHICH COMPRISES SIMULTANEOUSLY SUBJECTING THE SUBSTRATE WHILE IN AN UNHEATED STATE TO AN OXYGEN ATMOSPHERE CONTAINING AT LEAST 1/4 PERCENT BY WEIGHT OF OZONE AND RADIANT ENERGY HAVING A WAVELENTH OF FROM 1800A TO 3500A ANDAN INTENSITY OF AT LEAST 100 MILLIWATTS, WHEREBY COMPLETE REMOVAL OF THECARBONACEOUS MATERIAL FROM THE SURFACE OF THE SUBSTRATE IS EFFECTED IN LESS TIME AND THE REQUIREMENT OF PREHEATING THE SUBSTRATE AND MAINTAINING IT AT AN EFFECTIVE CARBONACEOUS TO THE OXYGEN ATMOSPHERE CONTURE PRIOR TO ITS EXPOSURE TO THE OXYGEN ATMOSHPERE CONTAINING A SMALL PERCENTAGE OF OZONE IS ELIMINATED.
Claim 7
Dependent Claim
110 words
subjecting the heated substrate to an oxygen atmosphere containing a small percentage of ozone, the improvement which comprises simultaneously subjecting the substrate while in an unheated state to an oxygen atmosphere containing at least 1/4 percent by weight of ozone and radiant energy having a wavelength of from 1800A to 3500A and an intensity of at least 100 milliwatts, whereby complete removal of the carbonaceous material from the surface of the substrate is effected in less time and the requirement of preheating the substrate and maintaining it at an effective carbonaceous material removal temperature prior to its exposure to the oxygen atmosphere containing a small percentage of ozone is eliminated.
Claim 8
Dependent Claim
110 words
subjecting the heated substrate to an oxygen atmosphere containing a small percentage of ozone, the improvement which comprises simultaneously subjecting the substrate while in an unheated state to an oxygen atmosphere containing at least 1/4 percent by weight of ozone and radiant energy having a wavelength of from 1800A to 3500A and an intensity of at least 100 milliwatts, whereby complete removal of the carbonaceous material from the surface of the substrate is effected in less time and the requirement of preheating the substrate and maintaining it at an effective carbonaceous material removal temperature prior to its exposure to the oxygen atmosphere containing a small percentage of ozone is eliminated.
Claim 9
Dependent Claim
17 words
The method of claim 1 where the oxygen containing atmosphere has from 1/2 % to 2% ozone.
Claim 10
Dependent Claim
19 words
The method of claim 1 where the substrate is a silicon wafer and the carbonaceous material is a photoresist.
Claim 11
Dependent Claim
18 words
The method of claim 1 where the substrate is conveyed through the reaction zone in a continuous manner.
Claim 12
Independent Claim
128 words
A method for effecting the removal of photoresist from the surface of semiconductor wafer which comprises continuously conveying semiconductor wafer through a reaction zone having an oxygen containing atmosphere with 1/4 % to 2% of ozone based on the weight of oxygen while continuously subjecting said semiconductor wafer to radiant energy which is sufficient to maintain the temperature of the interface of the surface of the wafer and the oxygen containing atmosphere at at least about 200*C during the time the wafer is conveyed through said reaction zone, where the radiant energy is generated by a medium vapor pressure mercury lamp capable of emitting ultraviolet radiation at a wavelength of from about 1,800 A to 3,500 A and an intensity of at least 100 milliwatts per square centimeter.
Claim 13
Independent Claim
128 words
A method for effecting the removal of photoresist from the surface of semiconductor wafer which comprises continuously conveying semiconductor wafer through a reaction zone having an oxygen containing atmosphere with 1/4 % to 2% of ozone based on the weight of oxygen while continuously subjecting said semiconductor wafer to radiant energy which is sufficient to maintain the temperature of the interface of the surface of the wafer and the oxygen containing atmosphere at at least about 200*C during the time the wafer is conveyed through said reaction zone, where the radiant energy is generated by a medium vapor pressure mercury lamp capable of emitting ultraviolet radiation at a wavelength of from about 1,800 A to 3,500 A and an intensity of at least 100 milliwatts per square centimeter.
Claim 14
Dependent Claim
15 words
A method in accordance with claim 5, where the semiconductor wafer is a silicon wafer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-16 | 1978-12-16 | 1979-06-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-16 | 1982-12-16 | 1983-06-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-16 | 1986-12-16 | 1987-06-17 | $7700.00 | Window Closed / Lapsed |