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US3887733A
Expired / Lapsed
US
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Doped oxide reflow process
Assignee: Motorola Solutions Inc
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Filing: 1974-04-24
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Granted: 1975-06-03
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Expires: 1994-04-24
Abstract
Abstract The shape of a doped oxide (e.g.) phosphorous doped oxide layer on a substrate may be altered by contacting the doped oxide with a source of hydroxyl ions, such as water, and heating the doped oxide to at least its softening temperature while in contact with the source of hydroxyl ions. The presence of the hydroxyl ions during this anneal reduces time required for the anneal by a factor of three or four for a given alteration of shape. This process is particularly useful for assuring proper oxide coverage over stepped structures, and correction of surface irregularities common in integrated circuits.
Inventors
- 👤 Donald L Tolliver
- 👤 William E Armstrong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:50
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/06; Y10S148/133
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
54 words
A PROCESS FOR ALTERING THE SHAPE OF A DOPED OXIDE LAYER ON A SUBSTRATE, WHICH COMPRISES* CONTACTING SAID DOPED OXIDE WITH A SOURCE OF HYDROXYL IONS, AND HEATING SAID DOPED OXIDE AT LEAST TO ITS SOFTENING IONS, AND ALLOWING SAID DOPED OXIDE TO REFLOW UNTIL THE DESIRED ALTERATION OF THE LAYER HAS TAKEN PLACE.
Claim 2
Dependent Claim
54 words
A PROCESS FOR ALTERING THE SHAPE OF A DOPED OXIDE LAYER ON A SUBSTRATE, WHICH COMPRISES* CONTACTING SAID DOPED OXIDE WITH A SOURCE OF HYDROXYL IONS, AND HEATING SAID DOPED OXIDE AT LEAST TO ITS SOFTENING IONS, AND ALLOWING SAID DOPED OXIDE TO REFLOW UNTIL THE DESIRED ALTERATION OF THE LAYER HAS TAKEN PLACE.
Claim 3
Dependent Claim
63 words
A process for altering the shape of a doped oxide layer on a substrate, which comprises: contacting said doped oxide with a source of hydroxyl ions, and heating said doped oxide at least to its softening temperature while in contact with said source of hydroxyl ions, and allowing said doped oxide to reflow until the desired alteration of the layer has taken place.
Claim 4
Dependent Claim
63 words
A process for altering the shape of a doped oxide layer on a substrate, which comprises: contacting said doped oxide with a source of hydroxyl ions, and heating said doped oxide at least to its softening temperature while in contact with said source of hydroxyl ions, and allowing said doped oxide to reflow until the desired alteration of the layer has taken place.
Claim 5
Dependent Claim
14 words
The process of claim 1 in which said source of hydroxyl ions in water.
Claim 6
Dependent Claim
19 words
The proces of claim 2 in which the water is formed in situ by reaction of hydrogen and oxygen.
Claim 7
Dependent Claim
21 words
The process of claim 2 in which the source of water is steam supplied to a chamber containing said doped oxide.
Claim 8
Dependent Claim
22 words
The process of claim 1 in which the dopant for said oxide layer comprises phosphorous, and said oxide layer comprises silicon oxide.
Claim 9
Dependent Claim
31 words
The process of claim 5 in which the phosphorous is present in an amount of from about 1 X 1020 to 1 X 1021 atoms/cm3, as determined by solid state diffusion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-02 | 1978-12-02 | 1979-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-02 | 1982-12-02 | 1983-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-02 | 1986-12-02 | 1987-06-03 | $7700.00 | Window Closed / Lapsed |