Method for sputtering garnet compound layer

Claim 2

said temperature of said substrate is established approximately in the range of greater than 500*C to 650 *C, and

Claim 3

Method of producing film with garnet stoichiometric composition AxB3 xCyD5 yO12, where O < x < 3 and O < y < 3, wherein A is a rare earth element of the lanthanide series including Gd, Eu, Tb and Er; B is Y, La or Sc; C is Al or Ga; and D is Fe, Ni or Co; comprising the steps of: a. establishing a target with substantially non-garnet structure and with said stoichiometric composition and establishing a substrate with garnet composition; b. sputtering said film onto said substrate from said target including establishing operational parameters by:

Claim 4

Method of producing film with garnet stoichiometric composition AxB3 xCyD5 yO12, where O < x < 3 and O < y < 3, wherein A is a rare earth element of the lanthanide series including Gd, Eu, Tb and Er; B is Y, La or Sc; C is Al or Ga; and D is Fe, Ni or Co; comprising the steps of: a. establishing a target with substantially non-garnet structure and with said stoichiometric composition and establishing a substrate with garnet composition; b. sputtering said film onto said substrate from said target including establishing operational parameters by:

Claim 5

establishing said substrate at a temperature approximately in the range of greater than 500*C to 1,000*C,

Claim 6

establishing said substrate at a temperature approximately in the range of greater than 500*C to 1,000*C,

Claim 7

establishing radio-frequency power to said target approximately in the range of 2 watts/sq. in. to 100 watt/sq. in;

Claim 8

establishing radio-frequency power to said target approximately in the range of 2 watts/sq. in. to 100 watt/sq. in;

Claim 9

Method as set forth in claim 1 wherein

Claim 10

said radio-frequency power to said target is established in the range of 2 watts/sq. in. to 23 watts/sq. in.

Claim 11

said radio-frequency power to said target is established in the range of 2 watts/sq. in. to 23 watts/sq. in.

Claim 12

Method as set forth in claim 2 including the step of establishing said radio-frequency bias on said substrate less than approximately 200 volts d.c. level peak-to-peak.

Claim 13

establishing radio-frequency bias on said substrate at a given d.c. level; and c. varying interdependently said operational parameters to deposit onto said substrate a film having substantially said garnet stoichiometic composition and to establish a given accumulation rate of thickness of said film on said substrate.

Claim 14

establishing radio-frequency bias on said substrate at a given d.c. level; and c. varying interdependently said operational parameters to deposit onto said substrate a film having substantially said garnet stoichiometic composition and to establish a given accumulation rate of thickness of said film on said substrate.

Claim 15

Method as set forth in claim 1 and wherein said radio-frequency power to said substrate is established approximately in the range of 35 watts/sq. in. to 60 watts/sq. in.

Claim 16

Method as set forth in claim 4 wherein said radio-frequency bias on said substrate is varied during production of said film thereon while said temperature of said substrate is maintained at an approximately fixed value.

Claim 17

Method as set forth in claim 1 wherein power density on said target is approximately in the range 20 watts/sq. in. to 100 watts/sq. in.

Claim 18

Method as set forth in claim 1 wherein said temperature of said substrate is greater than approximately 650*C, said radio-frequency bias on said substrate is approximately 75 volts d.c. level.

Claim 19

Method as set forth in claim 1 wherein said temperature of said substrate is less than approximately 650*C.

Claim 20

Method for producing a layer with garnet stoichiometry comprising the steps of establishing a target which has substantially a garnet stoichiometric composition which is substantially nongarnet structure and establishing a substrate with garnet composition, radio-frequency sputtering said film onto said substrate from said target including, establishing operational parameters such that said substrate is at a given temperature approximately in the range of 650*C to 1,000*C, radio-frequency power to said target is at a given power density thereat approximately in the range of 35 watts/sq. in. to 60 wAtts/sq. in., and radio-frequency bias on said substrate is at a given d.c. level approximately in the range of 200 volts d.c. level to 25 volts d.c. level, and varying interdependently said operational parameters to deposit onto said substrate a layer having substantially said garnet stoichiometric composition and to establish a given accumulation rate of thickness of said layer on said substrate approximately in the range of 1 Angstrom/sec. to 3 Angstroms/sec.

Claim 21

Method for producing a layer with garnet stoichiometry comprising the steps of establishing a target which has substantially a garnet stoichiometric composition which is substantially nongarnet structure and establishing a substrate with garnet composition, radio-frequency sputtering said film onto said substrate from said target including, establishing operational parameters such that said substrate is at a given temperature approximately in the range of 650*C to 1,000*C, radio-frequency power to said target is at a given power density thereat approximately in the range of 35 watts/sq. in. to 60 wAtts/sq. in., and radio-frequency bias on said substrate is at a given d.c. level approximately in the range of 200 volts d.c. level to 25 volts d.c. level, and varying interdependently said operational parameters to deposit onto said substrate a layer having substantially said garnet stoichiometric composition and to establish a given accumulation rate of thickness of said layer on said substrate approximately in the range of 1 Angstrom/sec. to 3 Angstroms/sec.

Claim 22

METHOD FOR PRODUCING A LAYER WITH GARNET STOICHIOMETRY COMPRISING THE STEPS OF ESTABLISHING A TARGET WHICH HAS SUBSTANTIALLY A GARNET STOICHIOMETRIC COMPOSITION WHICH IS SUBSTANTIALLY NONGARNET STRUCTURE AND ESTABLISHING A SUBSTRATE WITH GARNET COMPOSITION, RADIO-FREQUENCY SPUTTERING SAID FILM ONTO SAID SUBSTRATE FROM SAID TARGET INCLUDING, ESTABLISHING OPERATIONAL PARAMETERS SUCH THAT SAID SUBSTRATE IS AT A GIVEN TEMPERATURE APPROXIMATELY IN THE RANGE OF 650*C TO 1,000*C, RADIO-FREQUENCY POWER TO SAID TARGET IS AT A GIVEN POWER DENSITY THEREAT APPROXIMATELY IN THE RANGE OF 35 WATTS/SQ. IN. TO 60 WATTS/SQ. IN., AND RADIOFREQUENCY BIAS ON SAID SUBSTRATE IS AT A GIVEN D.C. LEVEL TO 2 APPROXIMATELY IN THE RANGE OF 200 VOLTS D.C. LEVEL TO 25 VOLTS D.C. LEVEL VARYING INTERDEPENDENTLY SAID OPERATIONAL PARAMETERS TO DEPOSIT ONTO SAID SUBSTRATE A LAYER HAVING SUBSTANTIALLY SAID GARNET STOICHIOMETRIC COMPOSITION AND TO ESTABLISH A GIVEN ACCUMULATION RATE OF THICK-

Claim 23

METHOD FOR PRODUCING A LAYER WITH GARNET STOICHIOMETRY COMPRISING THE STEPS OF ESTABLISHING A TARGET WHICH HAS SUBSTANTIALLY A GARNET STOICHIOMETRIC COMPOSITION WHICH IS SUBSTANTIALLY NONGARNET STRUCTURE AND ESTABLISHING A SUBSTRATE WITH GARNET COMPOSITION, RADIO-FREQUENCY SPUTTERING SAID FILM ONTO SAID SUBSTRATE FROM SAID TARGET INCLUDING, ESTABLISHING OPERATIONAL PARAMETERS SUCH THAT SAID SUBSTRATE IS AT A GIVEN TEMPERATURE APPROXIMATELY IN THE RANGE OF 650*C TO 1,000*C, RADIO-FREQUENCY POWER TO SAID TARGET IS AT A GIVEN POWER DENSITY THEREAT APPROXIMATELY IN THE RANGE OF 35 WATTS/SQ. IN. TO 60 WATTS/SQ. IN., AND RADIOFREQUENCY BIAS ON SAID SUBSTRATE IS AT A GIVEN D.C. LEVEL TO 2 APPROXIMATELY IN THE RANGE OF 200 VOLTS D.C. LEVEL TO 25 VOLTS D.C. LEVEL VARYING INTERDEPENDENTLY SAID OPERATIONAL PARAMETERS TO DEPOSIT ONTO SAID SUBSTRATE A LAYER HAVING SUBSTANTIALLY SAID GARNET STOICHIOMETRIC COMPOSITION AND TO ESTABLISH A GIVEN ACCUMULATION RATE OF THICK-

Claim 24

Method as set forth in claim 9 wherein said target is comprised of a mixture of oxides Y2O3, Ga2O3 and Fe2O3, and said film is produced with stoichiometric composition of Y3Fe5 yGayO12, where 0 < y < 3.