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US3887421A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of masking semiconductor wafers using a self-aligning mask

Assignee: Motors Liquidation Co
•
Filing: 1974-06-05
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Granted: 1975-06-03
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Expires: 1994-06-05
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Abstract

Abstract A method of using a self-aligning spray mask to selectively spray a maskant onto a semiconductor wafer face. The wafer face has a pattern of ridges thereon. The spray mask is of a magnetic metal and has portions with a pattern of grooves corresponding to the pattern of ridges on the semiconductor wafer face. The spray mask is magnetically held against the wafer face. The wafer ridges nest in the grooves of the spray mask, thus self-aligning the mask on the semiconductor wafer face for spraying of the maskant.

Inventors

  • 👤 James L Hudson
  • 👤 Larry L Jordan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 06:12
CPC Classifications
H; H10; H10W; H10W46/00; B; B05; B05B; B05B12/00; B05B12/16; B05B12/20; B05C; B05C17/00; B05C17/06; H10P; H10P95/00; H10W46/501; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/943; Y10S438/975

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 175 words
A process for applying a wax maskant to selected portions of a semiconductor wafer face prior to chemical etching of said wafer face, said process comprising: forming a pattern of ridges on a face of a wafer of semiconductive material having a plurality of regions containing active semiconductor devices; affixing an opposite face of said wafer to a support; placing a face of a spray mask on said wafer, said spray mask being a grid of a magnetic metal, said grid having a plurality of intersecting portions surrounding apertures corresponding to said regions in said wafer, and having a pattern of grooves on said face corresponding to said pattern of ridges on said wafer face; nesting said ridges in said grooves and abutting said spray mask face with said wafer face to interlock said mask with said wafer and align said grid apertures with said wafer regions; magnetically holding said mask against said wafer face; spraying wax onto said wafer regions through said apertures in said mask; and removing said mask from said wafer face.
Claim 2
Dependent Claim 175 words
A process for applying a wax maskant to selected portions of a semiconductor wafer face prior to chemical etching of said wafer face, said process comprising: forming a pattern of ridges on a face of a wafer of semiconductive material having a plurality of regions containing active semiconductor devices; affixing an opposite face of said wafer to a support; placing a face of a spray mask on said wafer, said spray mask being a grid of a magnetic metal, said grid having a plurality of intersecting portions surrounding apertures corresponding to said regions in said wafer, and having a pattern of grooves on said face corresponding to said pattern of ridges on said wafer face; nesting said ridges in said grooves and abutting said spray mask face with said wafer face to interlock said mask with said wafer and align said grid apertures with said wafer regions; magnetically holding said mask against said wafer face; spraying wax onto said wafer regions through said apertures in said mask; and removing said mask from said wafer face.

References Cited (Backward Citations)

US2958147A Cited
US3226245A Cited
US3002847A Cited
US2959152A Cited
US3226255A Cited
US3170810A Cited
US3678887A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-06-02 1978-12-02 1979-06-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-06-02 1982-12-02 1983-06-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-06-02 1986-12-02 1987-06-03 $7700.00 Window Closed / Lapsed

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