Abstract Method for producing at least two adjacent semiconductor components, each having at least two regions of varying conductance type, the conductance type of the regions of the one semiconductor component being different from those of the other semiconductor component, one region of the one conductance type being surrounded by an insulating zone of the other conductance type electrically insulating the respective semiconductor component, the insulating zone and two regions adjacent the insulating zone forming a parasitic transistor having an electrical amplification lower than the electrical amplification of a normal transistor having a base region that is of the one conductance type; which includes covering with a masking layer a surface of a semiconductor base member at regions thereof intended for the production of semiconductor components thereat; producing highly doped zones of the other conductance type around the regions of the semiconductor base member covered by the masking layer, removing the masking layer and epitaxially applying semiconductor material of the one conductance type to the surface of the semiconductor base member, permitting the formation through diffusion and vapor deposition of a zone of the other conductance type below the regions provided for the semiconductor components and in the vicinity of the surface of the region of the base semiconductor body of the one conductance type that had been previously coated with a masking layer, producing an insulating wall of the other conductance type around the semiconductor material of the one conductance type so that the insulating wall, the highly doped zone and the weakly doped zone define an insulating tub of the other conductance type around the region of the one conductance type, and producing at least one zone of the other conductance type in the epitaxially applied semiconductor material.
METHOD OF PRODUCING AT LEAST TWO ADJACENT SEMICONDUCTOR COMPONENTS EACH HAVING AT LEAST TWO REGIONS OF VARYING CONDUCTANCE TYPE, THE CONDUCTANCE TUPE OF THE REGIONS OF THE ONE SEMICONDUCTOR COMMPONENT BEING DIFFERENT FROM THOSE OF THE OTHER SEMICONDUCTOR COMPONENT, ONE REGION OF THE ONE THE OTHER CONDUCTANCE TYPE BEING SURROUNDED BY AN INSULATING ZONE THE OTHER CONDUCTANCE TYPE ELECTRICALLY INSULATING THE RESPECTIVE SEMICONDUCTOR COMPONENT, SAID INSULATINT ZONE AND TWO REGIOS ADJACENT SAID INSULATING ZONE FORMING A PARASITIC TRANSISTOR HAVING AN ELECTRICAL AMPLIFICATION LOWER THAN THE ELECTRICAL AMPLIFICATION OF A NORMAL TRANSISTOR HAVING A BASE REGION THAT IS OF SAID ONE CONDUCTANCE TYPE, WHICH COMPRISES COVERING WITH A MASKING LAYER A SURFACE OF A SEMICONDUCTOR BASE MEMBER AT REGIONS THEREOF INTENDED FOR THE PRODUCTION OF SEMICONDUCTOR COMPONENTS WITH INDIVIDUALLY TAILORED ISOLATION REGIONS, SELECTIVELY DIFFUSING TO PRODUCE AT LEAST A HIGHLY DOPED ANNULAR ZONE AND A SECOND ZONE INTO THE REGIONS OF THE SEMICONDUCTOR BASE MEMBER NOT COVERED BY THE MASKING LAYER, WHICH ZONES WILL FORM PARTS OF ISOLATING TUBS FOR PORTIONS OF A SUBSEQUENTLY DEPOSITED SEMICONDUCTOR LAYER, REMOVING THE MASKING LAYER, EPITAXIALLY APPLYING SEMICONDUCTOR MATERIAL OF ONE CONDUCTANCE TPYE TO THE SURFACE OF THE SEMICONDUCTTOR BASE MEMBER, FORMING THROUGH DIFFUSION AND VAPOR DEPOSITION A THIN WEALKYL DOPED ZONE OF THE OTHER CONDUCTANCE TYPE AT THE INTERFACE OF THE EPITAXIAL LAYER AND SUBSTRATA, SAID THIN ZONE RESULTING FROM THE RAPID LATERAL SURFACE DIFFUSION FROM THE HIGHLY DOPED REGIONS, DIFFUSING TO PRODUCE AT LEAST TWO STRONGLY DOPED INSULTING WALLS SO THAT ONE INSULTING WALL, THE HIGHLY DOPED ANNULAR ZONE AND THE WEAKLY DOPED ZONE DEFINE ONE INSULATING TUB AND THE OTHER INSULATING WALL AND OTHER HIGHLY DOPED ZONE FORMS THE SECOND DIFFERENT INSULATING TUB
Claim 2
Dependent Claim
281 words
METHOD OF PRODUCING AT LEAST TWO ADJACENT SEMICONDUCTOR COMPONENTS EACH HAVING AT LEAST TWO REGIONS OF VARYING CONDUCTANCE TYPE, THE CONDUCTANCE TUPE OF THE REGIONS OF THE ONE SEMICONDUCTOR COMMPONENT BEING DIFFERENT FROM THOSE OF THE OTHER SEMICONDUCTOR COMPONENT, ONE REGION OF THE ONE THE OTHER CONDUCTANCE TYPE BEING SURROUNDED BY AN INSULATING ZONE THE OTHER CONDUCTANCE TYPE ELECTRICALLY INSULATING THE RESPECTIVE SEMICONDUCTOR COMPONENT, SAID INSULATINT ZONE AND TWO REGIOS ADJACENT SAID INSULATING ZONE FORMING A PARASITIC TRANSISTOR HAVING AN ELECTRICAL AMPLIFICATION LOWER THAN THE ELECTRICAL AMPLIFICATION OF A NORMAL TRANSISTOR HAVING A BASE REGION THAT IS OF SAID ONE CONDUCTANCE TYPE, WHICH COMPRISES COVERING WITH A MASKING LAYER A SURFACE OF A SEMICONDUCTOR BASE MEMBER AT REGIONS THEREOF INTENDED FOR THE PRODUCTION OF SEMICONDUCTOR COMPONENTS WITH INDIVIDUALLY TAILORED ISOLATION REGIONS, SELECTIVELY DIFFUSING TO PRODUCE AT LEAST A HIGHLY DOPED ANNULAR ZONE AND A SECOND ZONE INTO THE REGIONS OF THE SEMICONDUCTOR BASE MEMBER NOT COVERED BY THE MASKING LAYER, WHICH ZONES WILL FORM PARTS OF ISOLATING TUBS FOR PORTIONS OF A SUBSEQUENTLY DEPOSITED SEMICONDUCTOR LAYER, REMOVING THE MASKING LAYER, EPITAXIALLY APPLYING SEMICONDUCTOR MATERIAL OF ONE CONDUCTANCE TPYE TO THE SURFACE OF THE SEMICONDUCTTOR BASE MEMBER, FORMING THROUGH DIFFUSION AND VAPOR DEPOSITION A THIN WEALKYL DOPED ZONE OF THE OTHER CONDUCTANCE TYPE AT THE INTERFACE OF THE EPITAXIAL LAYER AND SUBSTRATA, SAID THIN ZONE RESULTING FROM THE RAPID LATERAL SURFACE DIFFUSION FROM THE HIGHLY DOPED REGIONS, DIFFUSING TO PRODUCE AT LEAST TWO STRONGLY DOPED INSULTING WALLS SO THAT ONE INSULTING WALL, THE HIGHLY DOPED ANNULAR ZONE AND THE WEAKLY DOPED ZONE DEFINE ONE INSULATING TUB AND THE OTHER INSULATING WALL AND OTHER HIGHLY DOPED ZONE FORMS THE SECOND DIFFERENT INSULATING TUB
Claim 3
Dependent Claim
65 words
Method according to claim 1 which includes providing diffused zones of the one conductance type between adjacent insulating tubs for the respective semiconductor components and interrupting the zone of the other conductance type between the tubs and in said vicinity of the surface of the region of the base semiconductor body of the one conductance type that had been previously coated with the masking layer.