Semiconductor device

Claim 1

A semiconductor device comprising: a pair of semiconductor diodes connected in series opposition, said diodes formed in a single monocrystalline silicon semiconductor wafer having three layers of alternating conductivity types including an inner layer and a pair of outer layers, said semiconductor wafer bevelled around its periphery on both sides thereof, and having non-metalized end surfaces, wherein said end surfaces of said semiconductor wafer have an edge doping concentration of at least 1019 atoms/cm3, said wafer has a doping gradient at its end surfaces such that the doping concentration at a depth of 35 microns is greater than 1016 atoms/cm3, the doping concentration of said inner layer is less than 1017 atoms/cm3, preferably less than 1016 atoms/cm3, and the thickness of said outer layers of said semiconductor device is less than 100 microns; a pressure contact structurE juxtaposed to each face of said semiconductor wafer, each pressure contact structure including a thin, dish-shaped element of a highly ductile and highly conductive metal one side of which engages one of said nonmetalized end surfaces of said semiconductor wafer, and a thicker, disk-shaped conductive element abutting the exposed side of each dish-shaped element; and, a band of flexible insulative material surrounding the periphery of said semiconductor wafer, said insulative material adhering said thin, dish-shaped elements to said semiconductor wafer.