Patent US3883946A successfully refreshed from Google Patents.
US3883946A
Expired / Lapsed
US
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Methods of securing a semiconductor body to a substrate
Assignee: US Philips Corp
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Filing: 1972-06-13
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Granted: 1975-05-20
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Expires: 1992-06-13
Abstract
Abstract A method of securing a semiconductor body to a substrate by pressure bonding wherein between substantially flat facing surfaces of the semiconductor body and substrate there is applied an intermediate malleable metal layer and a mechanical bond between the semiconductor body and the substrate via the intermediate layer is obtained by placing the assembly of the semiconductor body, intermediate metal layer and substrate in a press under a pressure of at least 1 ton per square inch and at most 5 tons per square inch while maintaining the assembly at a temperature which is below the melting point of the intermediate metal layer and is below the temperature at which any liquid phase would form by interaction of the elemental components of the intermediate metal layer, substrate and semiconductor body at the facing surfaces, said pressure and temperature being applied for obtaining the bond for a period of not more than 30 seconds.
Inventors
- 👤 John Robert Dale
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:24
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/351; H10W72/352; H10W72/353; H10W72/354; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
214 words
A METHOD OF FORMING A BOND BETWEEN A SUBSTANTIALLY FLAT SURFACE OF A SEMICONDUCTOR BODY AND A SUBSTANTIALLY FLAT SURFACE OF A SUBSTRATE VIA AN INTERMEDIATE LAYER OF SOFT SOLDER MATERIAL, SAID BOND HAVING A BOND TENSILE STRENGTH OF APPROXIMATELY 20 PER CENT OR MORE OF THE ULTIMATE RENSILE STRENGTH OF SAID INTERMEDIATE LAYER, COMPRISING THE STEPS OF: POSITIONING A MALLEABLE METAL LAYER OF SOFT SOLDER MATERIAL HAVING LEAD AS THE PRIMARY CONSTITUENT AND A MELTING POINT WITHIN THE RANGE OF 300* TO 327*C BETWEEN A FLAT SURFACE OF A SEMICONDUCTOR BODY AND SUBSTRATE TOGETHER AT AND PRESSING SAID SEMICONDUCTOR BODY AND SUBSTRATE TOGETHER AT A PRESSURE NORMAL TO SAID FLAT SURFACES OF BETWEEN 1 AND 5 TONS PER SQUARE INCH AT A TEMPERATURE WITHIN THE RANGE OF 240* TO 290*C BUT BELOW THE MELTING POINT OF SAID MALLEABLE METAL LAYER AT SAID PRESSURE AND SUITABLY CLOSE TO BUT BELOW THE LOWEST TEMPERATURE AT WHICH A LIQUID PHASE FORMS AT A SURFACE OF SAID MALLEABLE LAYER AT SAID PRESSURE N, SAID TEMPERATURE AND PRESSURE BEING MAINTAINED FOR A PERIOD SUFFICIENT TO ACHIEVE A BOND HAVING A BOND TENSILE STRENGTH OF APPROXIMATELY 20 PERCENT OF MORE OF THE UTIMATE TENSILE STRENGTH OF SAID MALLEABLE LAYER, THE MAXIMUM PERIOD REQUIRED FOR SUCH BONDING BEING 30 SECONDS.
Claim 2
Independent Claim
214 words
A METHOD OF FORMING A BOND BETWEEN A SUBSTANTIALLY FLAT SURFACE OF A SEMICONDUCTOR BODY AND A SUBSTANTIALLY FLAT SURFACE OF A SUBSTRATE VIA AN INTERMEDIATE LAYER OF SOFT SOLDER MATERIAL, SAID BOND HAVING A BOND TENSILE STRENGTH OF APPROXIMATELY 20 PER CENT OR MORE OF THE ULTIMATE RENSILE STRENGTH OF SAID INTERMEDIATE LAYER, COMPRISING THE STEPS OF: POSITIONING A MALLEABLE METAL LAYER OF SOFT SOLDER MATERIAL HAVING LEAD AS THE PRIMARY CONSTITUENT AND A MELTING POINT WITHIN THE RANGE OF 300* TO 327*C BETWEEN A FLAT SURFACE OF A SEMICONDUCTOR BODY AND SUBSTRATE TOGETHER AT AND PRESSING SAID SEMICONDUCTOR BODY AND SUBSTRATE TOGETHER AT A PRESSURE NORMAL TO SAID FLAT SURFACES OF BETWEEN 1 AND 5 TONS PER SQUARE INCH AT A TEMPERATURE WITHIN THE RANGE OF 240* TO 290*C BUT BELOW THE MELTING POINT OF SAID MALLEABLE METAL LAYER AT SAID PRESSURE AND SUITABLY CLOSE TO BUT BELOW THE LOWEST TEMPERATURE AT WHICH A LIQUID PHASE FORMS AT A SURFACE OF SAID MALLEABLE LAYER AT SAID PRESSURE N, SAID TEMPERATURE AND PRESSURE BEING MAINTAINED FOR A PERIOD SUFFICIENT TO ACHIEVE A BOND HAVING A BOND TENSILE STRENGTH OF APPROXIMATELY 20 PERCENT OF MORE OF THE UTIMATE TENSILE STRENGTH OF SAID MALLEABLE LAYER, THE MAXIMUM PERIOD REQUIRED FOR SUCH BONDING BEING 30 SECONDS.
Claim 3
Dependent Claim
20 words
A method as defined in claim 1 wherein said temperature and pressure is maintained for no more than 30 seconds.
Claim 4
Dependent Claim
20 words
A method as defined in claim 2 wherein said temperature and pressure is maintained for no more than 5 seconds.
Claim 5
Dependent Claim
22 words
A method as defined in claim 1 wherein said pressure lies within the range of 2.0 to 3.5 tons per square inch.
Claim 6
Dependent Claim
19 words
A method as defined in claim 1 wherein said malleable layer is in the form of a metal foil.
Claim 7
Dependent Claim
20 words
A method as defined in claim 1 wherein said substrate, at least at said flat surface thereof, is ceramic material.
Claim 8
Dependent Claim
30 words
A method as defined in claim 6 wherein said flat surface of ceramic material is provided with a metallic coating of a material other than that of said malleable layer.
Claim 9
Dependent Claim
22 words
A method as defined in claim 1 wherein said malleable layer is deformed during said pressing step by less than 5 percent.
Claim 10
Dependent Claim
20 words
A method as defined in claim 1 wherein said substrate, at least at said flat surface thereof, is metallic material.
Claim 11
Dependent Claim
36 words
A method as defined in claim 9 wherein a metallic coating is provided on said flat surface of said metallic substrate of a material other than the materials of said metallic substrate and said malleable layer.
Claim 12
Dependent Claim
22 words
A method as defined in claim 1 wherein said substrate is of copper or iron or an iron, nickel and cobalt alloy.
Claim 13
Independent Claim
229 words
A method of forming a bond between a substantially flat surface of a semiconductor body and a substantially flat surface of a substrate via an intermediate layer of soft solder material, said bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Strength of said intermediate layer, comprising the steps of: positioning a malleable metal layer of soft solder material having either lead and tin, cadmium and tin, lead and indium, lead-cadmium and tin, or lead-silver and tin as constituents and a melting point within the range of 150* to 300*C between a flat surface of a semiconductor body and a flat surface of a substrate; and pressing said semiconductor body and substrate together at a pressure normal to said flat surfaces of between 1 and 5 tons per square inch at a temperature within the range of 100* to 280*C but below the melting point of said malleable metal layer at said pressure and suitably close to but below the lowest temperature at which a liquid phase forms at a surface of said malLeable layer at said pressure, said temperature and pressure being maintained for a period sufficient to achieve a bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Stength of said malleable layer, the maximum period required for such bonding being 30 seconds.
Claim 14
Independent Claim
229 words
A method of forming a bond between a substantially flat surface of a semiconductor body and a substantially flat surface of a substrate via an intermediate layer of soft solder material, said bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Strength of said intermediate layer, comprising the steps of: positioning a malleable metal layer of soft solder material having either lead and tin, cadmium and tin, lead and indium, lead-cadmium and tin, or lead-silver and tin as constituents and a melting point within the range of 150* to 300*C between a flat surface of a semiconductor body and a flat surface of a substrate; and pressing said semiconductor body and substrate together at a pressure normal to said flat surfaces of between 1 and 5 tons per square inch at a temperature within the range of 100* to 280*C but below the melting point of said malleable metal layer at said pressure and suitably close to but below the lowest temperature at which a liquid phase forms at a surface of said malLeable layer at said pressure, said temperature and pressure being maintained for a period sufficient to achieve a bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Stength of said malleable layer, the maximum period required for such bonding being 30 seconds.
Claim 15
Dependent Claim
20 words
A method as defined in claim 12 wherein said temperature and pressure is maintained for no more than 30 seconds.
Claim 16
Dependent Claim
20 words
A method as defined in claim 13 wherein said temperature and pressure is maintained for no more than 5 seconds.
Claim 17
Dependent Claim
22 words
A method as defined in claim 12 wherein said pressure lies within the range of 2.0 to 3.5 tons per square inch.
Claim 18
Dependent Claim
19 words
A method as defined in claim 12 wherein said malleable layer is in the form of a metal foil.
Claim 19
Dependent Claim
20 words
A method as defined in claim 12 wherein said substrate, at least at said flat surface thereof, is ceramic material.
Claim 20
Dependent Claim
30 words
A method as defined in claim 17 wherein said flat surface of ceramic material is provided with a metallic coating of a material other than that of said malleable layer.
Claim 21
Dependent Claim
22 words
A method as defined in claim 12 wherein said malleable layer is deformed during said pressing step by less than 5 percent.
Claim 22
Dependent Claim
20 words
A method as defined in claim 12 wherein said substrate, at least at said flat surface thereof, is metallic material.
Claim 23
Dependent Claim
36 words
A method as defined in claim 20 wherein a metallic coating is provided on said flat surface of said metallic substrate of a material other than the materials of said metallic substrate and said malleable layer.
Claim 24
Dependent Claim
22 words
A method as defined in claim 12 wherein said substrate is of copper or iron or an iron, nickel and cobalt alloy.
Claim 25
Independent Claim
215 words
A method of forming a bond between a substantially flat surface of a semiconductor body and a substantially flat surface of a substrate via an intermediate layer of soft solder material, said bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Strenth of said intermediate layer, comprising the steps of: positioning a malleable metal layer of soft solder material having lead and indium as constituents and a melting point within the range of 235* to 260*C between a flat surface of a semiconductor body and a flat surface of a substrate; and pressing said semiconductor body and substrate together at a pressure normal to said flat surfaces of between 1 and 5 tons per square inch at a temperature within the range of 180* to 200*C but below the melting point of said malleable metal layer at said pressure and suitably close to but below the lowest temperature at which a liquid phase forms at a surface of said malleable layer at said pressure, said temperature and pressure being maintained for a period sufficient to achieve a bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Strength of said malleable layer, the maximum period required for such bonding being 30 seconds.
Claim 26
Independent Claim
215 words
A method of forming a bond between a substantially flat surface of a semiconductor body and a substantially flat surface of a substrate via an intermediate layer of soft solder material, said bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Strenth of said intermediate layer, comprising the steps of: positioning a malleable metal layer of soft solder material having lead and indium as constituents and a melting point within the range of 235* to 260*C between a flat surface of a semiconductor body and a flat surface of a substrate; and pressing said semiconductor body and substrate together at a pressure normal to said flat surfaces of between 1 and 5 tons per square inch at a temperature within the range of 180* to 200*C but below the melting point of said malleable metal layer at said pressure and suitably close to but below the lowest temperature at which a liquid phase forms at a surface of said malleable layer at said pressure, said temperature and pressure being maintained for a period sufficient to achieve a bond having a bond tensile strength of approximately 20 percent or more of the Ultimate Tensile Strength of said malleable layer, the maximum period required for such bonding being 30 seconds.
Claim 27
Dependent Claim
20 words
A method as defined in claim 23 wherein said temperature and pressure is maintained for no more than 30 seconds.
Claim 28
Dependent Claim
20 words
A method as defined in claim 24 wherein said temperature and pressure is maintained for no more than 5 seconds.
Claim 29
Dependent Claim
22 words
A method as defined in claim 23 wherein said pressure lies within the range of 2.0 to 3.5 tons per square inch.
Claim 30
Dependent Claim
19 words
A method as defined in claim 23 wherein said malleable layer is in the form of a metal foil.
Claim 31
Dependent Claim
20 words
A method as defined in claim 23 wherein said substrate, at least at said flat surface thereof, is ceramic material.
Claim 32
Dependent Claim
30 words
A method as defined in claim 28 wherein said flat surface of ceramic material is provided with a metallic coating of a material other than that of said malleable layer.
Claim 33
Dependent Claim
22 words
A method as defined in claim 23 wherein said malleable layer is deformed during said pressing step by less than 5 percent.
Claim 34
Dependent Claim
20 words
A method as defined in claim 23 wherein said subStrate, at least at said flat surface thereof, is metallic material.
Claim 35
Dependent Claim
36 words
A method as defined in claim 31 wherein a metallic coating is provided on said flat surface of said metallic substrate of a material other than the materials of said metallic substrate and said malleable layer.
Claim 36
Dependent Claim
22 words
A method as defined in claim 23 wherein said substrate is of copper or iron or an iron, nickel and cobalt alloy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-19 | 1978-11-18 | 1979-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-19 | 1982-11-18 | 1983-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-19 | 1986-11-18 | 1987-05-20 | $7700.00 | Window Closed / Lapsed |