US3882528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device for producing or amplifying high-frequency electromagnetic oscillations
Assignee: US Philips Corp
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Filing: 1973-10-02
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Granted: 1975-05-06
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Expires: 1993-10-02
Abstract
Abstract A Gunn diode comprising a semiconductor layer having electrodes which, in the direction parallel to the layer, are situated at a distance. In order to stabilize the generation of domains and to counteract ionization phenomena at the anode, which restrict the life of the diode, at least a metal layer is provided which forms an ohmic contact with an electrode and forms a Schottky diode with a part of the semiconductor layer adjoining said electrode.
Inventors
- 👤 Dominique Boccon-Gibod
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:55
CPC Classifications
H; H10; H10N; H10N80/00; H10N80/10; H10N80/107
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
136 words
A semiconductor device for producing or amplifying high frequency electromagnetic oscillations, said device comprising: a. a semiconductor layer having a first conductivity type and characterized by a two-valley band structure; b. two spaced electrodes respectively comprising an anode and a cathode located at and forming ohmic contacts with said layer, said semiconductor layer, anode and cathode comprising a Gunn diode structure, whereby a negative differential resistance can be produced by applying an electric field between said anode and cathode; and c. at least said anode having a first metal layer in ohmic contact therewith at a first portion of said first metal layer and a second portion of said first metal layer disposed between said anode and cathode and forming a Schottky-diode type rectifying contact with an active part of said semiconductor layer adjoining said anode.
Claim 2
Dependent Claim
136 words
A semiconductor device for producing or amplifying high frequency electromagnetic oscillations, said device comprising: a. a semiconductor layer having a first conductivity type and characterized by a two-valley band structure; b. two spaced electrodes respectively comprising an anode and a cathode located at and forming ohmic contacts with said layer, said semiconductor layer, anode and cathode comprising a Gunn diode structure, whereby a negative differential resistance can be produced by applying an electric field between said anode and cathode; and c. at least said anode having a first metal layer in ohmic contact therewith at a first portion of said first metal layer and a second portion of said first metal layer disposed between said anode and cathode and forming a Schottky-diode type rectifying contact with an active part of said semiconductor layer adjoining said anode.
Claim 3
Dependent Claim
30 words
A semiconductor device as recited in claim 1, wherein at least one of said electrodes comprises a highly doped semiconductor zone of said first conductivity type adjoining said semiconductor layer.
Claim 4
Dependent Claim
67 words
A semiconductor device as recited in claim 1, further comprising and a second metal layer provided to said cathode, said second metal layer comprising a first portion in ohmic contact with said contact and a second portion disposed between said cathode and said anode and forming a Schottky diode type rectifying contact with an active part of said semiconductor layer adjoininG said cathode respective said metal layers.
Claim 5
Dependent Claim
47 words
A semiconductor device as recited in claim 3, wherein said second portion of at least one of said metal layers extends on said semiconductor layer in the direction of the other of said electrodes over a distance of at least 10 microns and at most 50 microns.
Claim 6
Dependent Claim
32 words
A semiconductor device as recited in claim 3, wherein at least said second portion of said second metal layer associated with said cathode faces and tapers in the direction of said anode.
Claim 7
Dependent Claim
45 words
A semiconductor device as recited in claim 1, wherein said first metal layer associated with said anode, comprises an edge that faces said cathode and has the form of an arc of a circle having a center which lies between said edge and said cathode.
Claim 8
Dependent Claim
25 words
A semiconductor device as recited in claim 1, wherein said semiconductor layer consists of n-type gallium arsenide and said metal layer consists essentially of aluminum.
Claim 9
Dependent Claim
21 words
A semiconductor device as recited in claim 1, further comprising a substantially insulating substrate, said layer being disposed on said substrate.
References Cited (Backward Citations)
US3508125A
Cited
US3706014A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-05 | 1978-11-04 | 1979-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-05 | 1982-11-04 | 1983-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-05 | 1986-11-04 | 1987-05-06 | $7700.00 | Window Closed / Lapsed |