Semiconductor device
Abstract
Abstract SPACED CATHODE AND ANODE CONTACTS ENGAGE A SEMICONDUCTOR LAYER WITH AT LEAST THE CATHODE CONTACT FORMING AN INJECTING WITH THE SEMICONDUCTOR LAYER. A THIRD CONTACT BETWEEN THE CATHODE AND ANODE CONTACTS AND ADJACENT THE CATHOD CONTACT FORMS A BLOCKING JUNCTION WITH THE SEMICONDUCTOR LAYER AND IS ELECTRICALLY CONNECTED TO THE CATHODE CONTACT. A VOLTAGE APPLIED BETWEEN THE CATHODE AND ANODE CONTACTS CREATES AN ELECTRICAL FIELD ALONG THE SURFACE OF THE SEMICONDUCTOR LAYER WITH THE PROFILE OF THE ELECTRICAL FIELD BEING ADJUSTED BY THE VOLTAGE APPLIED TO THE THIRD CONTACT. THE PROFILE OF THE ELECTRICAL FIELD CAN BE VARIED BY CHANGING THE DISTANCE BETWEEN THE ANODE FACING END OF THE THIRD CONTACT AND THE ANODE FACING END OF THE CATHODE CONTACT AND/OR BY CHANGING THE VOLTAGE APPLIED TO THE THIRD CONTACT WITH RESPECT TO THE VOLTAGE APPLIED TO THE CATHODE CONTACT.
Inventors
- 👤 Raymond Harkless Dean
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-12-12 | 1976-06-12 | 1976-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-12-12 | 1980-06-12 | 1980-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-12-12 | 1984-06-12 | 1984-12-12 | $7700.00 | Window Closed / Lapsed |