US3880680A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Liquid phase epitaxial process
Assignee: Siemens AG
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Filing: 1973-09-27
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Granted: 1975-04-29
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Expires: 1993-09-27
Abstract
Abstract The invention comprises a process for the production of a layer which is epitaxially grown on a surface of a substrate, in which the material which is to be epitaxially grown is brought into contact with the surface of the substrate, and in which at a high temperature some of the material at the surface of the substrate is dissolved in a melt and in the liquid phase the melt forms a surface contact with the surface of the substrate, and in which the material of the melt is compelled to assume the form of a thin layer on the surface of the substrate by means of a body whose material at the surface with which the body contacts the liquid phase is inert in relation to the material of the liquid phase.
Inventors
- 👤 Claus Weyrich
- 👤 Gunter Winstel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:10
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/12; C30B19/10; C30B19/106; Y; Y10; Y10S; Y10S438/00; Y10S438/955
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
130 words
A PROCESS FOR EPITAXIALLY GROWING A LAYER ON THE SURFACE OF A SUBSTRATE WHICH INCLUDES BRINGING MELT MATERIAL WHICH INCLUDES GALLIUM INTO CONTACT WITH THE SURFACE OF SAID SUBSTRATE ATA LOW TEMPERATURE OF APPROXIMATELY 29*C GRADUALLY RAISING THE TEMPERATURE OF THE MELT TO A HIGH TEMPERATURE, WHEREIN SOME SUBSTRATE MATERIAL IS DISSOLVED IN THE MELT, AND THEREAFTER REDUCING THE TEMPERATURE OF THE MELT, THEREBY CAUSING THE DISSOLVED MATERIAL TO BE REDEPOSITED ON SAID SUBSTRATE, THE THICKNESS OF MELT AT SAID HIGH TEMPERATURE BEING MAINTAINED BETWEEN PREDETERMINED UPPER AND LOWER LIMITS BY A COVER OF MATERIAL INERT TO SAID METAL, SAID UPPER LIMIT BEING NOT GREATER THAN THE LENGTH OF THE DIFFUSION DISTANCE OVER WHICH SAID DISSOLVED MATERIAL CAN COVER DURING THE PERIOD WHEN THE TEMPERATURE DECREASES FOR THE EPITAXIAL GROWTH.
Claim 2
Dependent Claim
130 words
A PROCESS FOR EPITAXIALLY GROWING A LAYER ON THE SURFACE OF A SUBSTRATE WHICH INCLUDES BRINGING MELT MATERIAL WHICH INCLUDES GALLIUM INTO CONTACT WITH THE SURFACE OF SAID SUBSTRATE ATA LOW TEMPERATURE OF APPROXIMATELY 29*C GRADUALLY RAISING THE TEMPERATURE OF THE MELT TO A HIGH TEMPERATURE, WHEREIN SOME SUBSTRATE MATERIAL IS DISSOLVED IN THE MELT, AND THEREAFTER REDUCING THE TEMPERATURE OF THE MELT, THEREBY CAUSING THE DISSOLVED MATERIAL TO BE REDEPOSITED ON SAID SUBSTRATE, THE THICKNESS OF MELT AT SAID HIGH TEMPERATURE BEING MAINTAINED BETWEEN PREDETERMINED UPPER AND LOWER LIMITS BY A COVER OF MATERIAL INERT TO SAID METAL, SAID UPPER LIMIT BEING NOT GREATER THAN THE LENGTH OF THE DIFFUSION DISTANCE OVER WHICH SAID DISSOLVED MATERIAL CAN COVER DURING THE PERIOD WHEN THE TEMPERATURE DECREASES FOR THE EPITAXIAL GROWTH.
Claim 3
Dependent Claim
14 words
A process according to claim 1, in which said cover floats on said melt.
Claim 4
Dependent Claim
19 words
A process according to claim 1, in which said substrate is galliumphosphite and in which said melt is gallium.
Claim 5
Dependent Claim
25 words
A process according to claim 1, in which said upper limit above said substrate is fixed by said cover being physically supported above said substrate.
Claim 6
Dependent Claim
57 words
A process as claimed in claim 1, characterized in that the material of the melt is applied in a measured quantity to the surface of the substrate, and that the cover is placed onto this material, wherein the cover rests on the thin layer of the material of the liquid phase, at least at the high temperature.
Claim 7
Dependent Claim
46 words
A process as claimed in claim 1, characterized in that at least one dopant which is soluble at the operating temperature in the melt is added to the material of the melt which is to be brought into contact with the surface of the substrate body.
Claim 8
Dependent Claim
47 words
A process as claimed in claim 1, characterized in that at least one dopant is conducted via the gas phase to the material of the melt, and that this dopant is incorporated into the layer which is to be epitaxially deposited during the growth of said layer.
Claim 9
Dependent Claim
18 words
A process as claimed in claim 7, characterized in that a plurality of different dopants are simultaneously supplied.
Claim 10
Dependent Claim
17 words
A process as claimed in claim 7, characterized in that a plurality of dopants are consecutively supplied.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-28 | 1978-10-28 | 1979-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-28 | 1982-10-28 | 1983-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-28 | 1986-10-28 | 1987-04-29 | $7700.00 | Window Closed / Lapsed |