US3879631A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor target with region adjacent pn junction region shielded
Assignee: Westinghouse Electric Corp
•
Filing: 1974-07-19
•
Granted: 1975-04-22
•
Expires: 1994-07-19
Abstract
Abstract A semiconductor device including a wafer of semiconductive material of one conductivity type and a region within said wafer of opposite type conductivity and a PN junction formed therebetween. A radiation shielding member is disposed about the region and extends above a portion of the surface of the wafer and over a portion of the region to shield at least a portion of the depletion region about the PN junction from radiation.
Inventors
- 👤 Karl K Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:03
CPC Classifications
H; H10; H10P; H10P95/00; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H10D; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
239 words
A planar semiconductive diode target comprising, a body portion of a semiconductive material of a first type conductivity with a substantially planar surface, a central region of a second opposite type semiconductive material extending from the planar surface into the body portion a predetermined distance, with the first type semiconductive material selected from N-type and Ptype semiconductive material and the second type being the other type, with a PN junction formed at the interface between the opposite type semiconductive materials, a depletion region formed at said PN junction and extending into the body portion about the PN junction, an insulating layer disposed upon the planar surface peripherally about the central region and overlapping the peripheral edge of the central region, a first contact electrode disposed upon the central region in ohmic contact with the central region material and overlapping a portion of the insulating layer, a second shielding electrode disposed in ohmic contact with and upon the planar surface of the body portion of the target about the insulating layer beyond the outer edge of the depletion region at the planar surface of the body portion, and which second shielding electrode extends from the planar surface and has an inwardly projecting extending end portion which is spaced above the insulating layer and the peripheral edge of the first contact electrode, said target being disposed within a cathode ray tube and having its PN junction side facing the cathode therein.
Claim 2
Dependent Claim
239 words
A planar semiconductive diode target comprising, a body portion of a semiconductive material of a first type conductivity with a substantially planar surface, a central region of a second opposite type semiconductive material extending from the planar surface into the body portion a predetermined distance, with the first type semiconductive material selected from N-type and Ptype semiconductive material and the second type being the other type, with a PN junction formed at the interface between the opposite type semiconductive materials, a depletion region formed at said PN junction and extending into the body portion about the PN junction, an insulating layer disposed upon the planar surface peripherally about the central region and overlapping the peripheral edge of the central region, a first contact electrode disposed upon the central region in ohmic contact with the central region material and overlapping a portion of the insulating layer, a second shielding electrode disposed in ohmic contact with and upon the planar surface of the body portion of the target about the insulating layer beyond the outer edge of the depletion region at the planar surface of the body portion, and which second shielding electrode extends from the planar surface and has an inwardly projecting extending end portion which is spaced above the insulating layer and the peripheral edge of the first contact electrode, said target being disposed within a cathode ray tube and having its PN junction side facing the cathode therein.
Claim 3
Dependent Claim
239 words
A planar semiconductive diode target comprising, a body portion of a semiconductive material of a first type conductivity with a substantially planar surface, a central region of a second opposite type semiconductive material extending from the planar surface into the body portion a predetermined distance, with the first type semiconductive material selected from N-type and P-type semiconductive material and the second type being the other type, with a PN junction formed at the interface between the opposite type semiconductive materials, a depletion region formed at said PN junction and extending into the body portion about the PN junction, an insulating layer disposed upon the planar surface peripherally about the central region and overlapping the peripheral edge of the central region, a first contact electrode disposed upon the central region in ohmic contact with the central region material and overlapping a portion of the insulating layer, a second shielding electrode disposed in ohmic contact with and upon the planar surface of the body portion of the target about the insulating layer beyond the outer edge of the depletion region at the planar surface of the body portion, and which second shielding electrode extends from the planar surface and has an inwardly projecting extending end portion which is spaced above the insulating layer and the peripheral edge of the first contact electrode, said target being disposed within a cathode ray tube and having its PN junction side facing the cathode therein.
Claim 4
Dependent Claim
239 words
A planar semiconductive diode target comprising, a body portion of a semiconductive material of a first type conductivity with a substantially planar surface, a central region of a second opposite type semiconductive material extending from the planar surface into the body portion a predetermined distance, with the first type semiconductive material selected from N-type and P-type semiconductive material and the second type being the other type, with a PN junction formed at the interface between the opposite type semiconductive materials, a depletion region formed at said PN junction and extending into the body portion about the PN junction, an insulating layer disposed upon the planar surface peripherally about the central region and overlapping the peripheral edge of the central region, a first contact electrode disposed upon the central region in ohmic contact with the central region material and overlapping a portion of the insulating layer, a second shielding electrode disposed in ohmic contact with and upon the planar surface of the body portion of the target about the insulating layer beyond the outer edge of the depletion region at the planar surface of the body portion, and which second shielding electrode extends from the planar surface and has an inwardly projecting extending end portion which is spaced above the insulating layer and the peripheral edge of the first contact electrode, said target being disposed within a cathode ray tube and having its PN junction side facing the cathode therein.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-21 | 1978-10-21 | 1979-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-21 | 1982-10-21 | 1983-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-21 | 1986-10-21 | 1987-04-22 | $7700.00 | Window Closed / Lapsed |