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Method for producing metal structures upon semiconductor surfaces

Assignee: Siemens AG
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Filing: 1973-11-06
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Granted: 1975-04-08
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Expires: 1993-11-06
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Abstract

Abstract The invention describes a method of producing fine structures, preferably those consisting of a metal coating, upon semiconductor surfaces. More particularly, the invention relates to a method of producing metal layers upon semiconductor surfaces thus providing contact areas on semiconductor circuit components. The metal coating covers the entire area of surface to be processed. According to conventional planar technique, the coated area is subsequently covered by a suitable photovarnish upon which the desired structure or configuration is impressed by photographic exposure and development of the photovarnish. The non-exposed areas of the metal coating are thereafter dissolved. According to the present invention, the metal deposition, initially covering the entire area of the surface to be processed, is given an addition of at least one metal which reduces the etching time required for subsequently eliminating the area portions not covered by the etching mask. This also stabilizes the semiconductor surface.

Inventors

  • 👤 Helmuth Murrmann

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 15:32
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 26 words
A SEMICONDUCTOR DEVICE COMPRISING A SUBSTANTIALLY PLANAR SEMICONDUCTOR MEMBER HAVING DISPOSED THEREON AN ALUMINUM LAYER CONTAINING NICKEL OF AT MOST 0.5% TO STABILIZE THE SEMICONDUCTOR SURFACE.
Claim 2
Dependent Claim 26 words
A SEMICONDUCTOR DEVICE COMPRISING A SUBSTANTIALLY PLANAR SEMICONDUCTOR MEMBER HAVING DISPOSED THEREON AN ALUMINUM LAYER CONTAINING NICKEL OF AT MOST 0.5% TO STABILIZE THE SEMICONDUCTOR SURFACE.
Claim 3
Dependent Claim 34 words
The semiconductor device of claim 1 wherein said substantially planar member has a given surface area and said aluminum layer covers only a part of said area to provide electrical conducting paths of aluminum.
Claim 4
Dependent Claim 11 words
A semiconductor device of claim 1, wherein said semiconductor is silicon.

References Cited (Backward Citations)

US2886432A Cited
US2981877A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-04-07 1978-10-07 1979-04-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-04-07 1982-10-07 1983-04-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-04-07 1986-10-07 1987-04-08 $7700.00 Window Closed / Lapsed

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