Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
100 words
A control device matrix compising: a two dimensional, noncoplanar array of conductive elements crossing one another at a plurality of points, electron emitting means disposed between the elements at the points and being mutually in physical contact therewith, discrete bodies of amorphous, normally insulative material at said points and spaced from the emitting means by selected conductive elements, primary circuit means defining discrete paths through the bodies of amorphous material, and control means for selectively actuating the electron emitting means thereby to selectively switch the bodies to a more conductive state by injecting high energy charge carriers into the bodies.
Claim 2
Dependent Claim
100 words
A control device matrix compising: a two dimensional, noncoplanar array of conductive elements crossing one another at a plurality of points, electron emitting means disposed between the elements at the points and being mutually in physical contact therewith, discrete bodies of amorphous, normally insulative material at said points and spaced from the emitting means by selected conductive elements, primary circuit means defining discrete paths through the bodies of amorphous material, and control means for selectively actuating the electron emitting means thereby to selectively switch the bodies to a more conductive state by injecting high energy charge carriers into the bodies.
Claim 3
Dependent Claim
96 words
The control device matrix of claim 1 wherein said electron emitting means and body of amorphous normally insulative material at each of said conductive element crossing points forming a current control device thereat with said amorphous body being a switch-forming semiconductor material, said primary circuit means defining discrete circuit paths through the bodies of said switch-forming semiconductor material, and said control means for selectively actuating the electron emitting means of a selected current control device selectively switching the associated amorphous semiconductor body to a more conductive state by injecting the charge carriers into the selected body.
Claim 4
Dependent Claim
77 words
The control device matrix of claim 2, wherein said discrete circuit paths at each of said crossing points extend between one of said conductive elements at the associated crossing a portion of which forms an electrode on one side of the associated amorphous body and an electrode on the opposite side of the same forming part of said primary circuit-forming means between which latter electrode and said one conductive element a source of voltage may be connected.
Claim 5
Dependent Claim
154 words
The control device matrix of claim 3 wherein said electrode on said opposite side of the body of amorphous semiconductor material at each of said points and said one conductive element on said one side thereof constitutes respectively outer and inner primary electrodes, and said electron emitting means is interfaced with said body of amorphous semiconductor material on the side of said inner primary electrode remote from the outer primary electrode, said electrode emitting means including an electron electrode, a thin insulating layer separating said electron emitting electrode from said inner primary electrode, said inner primary electrode being constructed to provide an electric field between it and said electron emitting electrode which causes electrons to flow from said electron emitting electrode and through said thin insulating layer to pass into said body of amorphous semiconductor material when a voltage of proper polarity is connected between said inner primary electrode and said electron emitting electrode.
Claim 6
Dependent Claim
36 words
The control device matrix of claim 4 wherein said control means includes a circuit for selectively applying a voltage between the associated electron emitting means and the inner primary electrode of a selected current control device.