Abstract There are disclosed indium phosphide p-n junction diodes providing efficient room temperature electroluminescence at wavelengths between 0.98 and 1.10 micrometers and comprising at least an n-type portion containing substantial quantities of cadmium and tin but forming a minor constituent in the n-type portion. The p-type portion is typically zinc or cadmium doped single crystal indium phosphide used as the substrate in the fabrication process. The n-type portion is epitaxially deposited by liquid phase epitaxial from tin solution. The resulting diode emits efficiently at the 1.05 micrometer wavelength of low loss glass fibers and also provides a better match to the absorption wavelength of infrared-to-visible frequency-converting phosphor than does a gallium arsenide laser or electroluminescence diode. External efficiencies exceeding 1 percent have been obtained.
A LIGHT-EMITTING DIODE OF THE TYPE COMPRISING A CRYSTALLINE BODY OF INDIUM PHOSPHIDE (INP) INCLUDING BOTH P-TYPE AND N-TYPE PORTIONS FORMING A JUNCTION AND ELECTRODE MEANS FOR ELECTRICALLY COUPLING TO SAID BODY, SAID N-TYPE PORTION BEING CHARACTERIZED BY QUANTITIES OF CADMIUM AND TIN SUBSTANTIALLY EXCEEDING IMPURITY DOPING LEVELS, THE TIN BEING PRESENT IN A QUANTITY EXCEEDING THAT OF THE CADMIUM BUT MOST OF SAID CADMIUM TOGETHER WITH AN EQUAL QUANTITY OF SAID TIN FORMING A SIGNIFICANT MINOR PORTION OF CADMIUM TIN PHOSPHIDE (CDSNP2) IN SAID INP.
Claim 2
Dependent Claim
86 words
A LIGHT-EMITTING DIODE OF THE TYPE COMPRISING A CRYSTALLINE BODY OF INDIUM PHOSPHIDE (INP) INCLUDING BOTH P-TYPE AND N-TYPE PORTIONS FORMING A JUNCTION AND ELECTRODE MEANS FOR ELECTRICALLY COUPLING TO SAID BODY, SAID N-TYPE PORTION BEING CHARACTERIZED BY QUANTITIES OF CADMIUM AND TIN SUBSTANTIALLY EXCEEDING IMPURITY DOPING LEVELS, THE TIN BEING PRESENT IN A QUANTITY EXCEEDING THAT OF THE CADMIUM BUT MOST OF SAID CADMIUM TOGETHER WITH AN EQUAL QUANTITY OF SAID TIN FORMING A SIGNIFICANT MINOR PORTION OF CADMIUM TIN PHOSPHIDE (CDSNP2) IN SAID INP.
Claim 3
Dependent Claim
66 words
A light-emitting diode of the type claimed in claim 1 in which a part of the tin in the n-type portion of the indium phosphide body is distributed as a donor and a part of the cadmium therein is distributed as an acceptor in an amount nearly equal to the amount of donor tin to compensate the n-type portion of the body to a substantial degree.
Claim 4
Dependent Claim
30 words
A light-emitting diode according to claim 2 in which tin is present in the n-type portion of the indium phosphide body at a level of at least 0.15 mole percent.