Patent US3870976A successfully refreshed from Google Patents.
US3870976A
Expired / Lapsed
US
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Integrated attenuation element comprising semiconductor body
Assignee: Siemens AG
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Filing: 1973-01-04
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Granted: 1975-03-11
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Expires: 1993-01-04
Abstract
Abstract An integrated attenuation element having a variable attenuation characteristic for high frequency signals comprises a semiconductor body of one conductivity type in one face of which there are arranged two zones of the other conductivity type. The semiconductor body has a contact electrode on the face opposite to that containing the two zones. One of the two zones serves as an input or as an output and the contact electrode serves as an output or as an input, respectively, for the high frequency signals, and the other of the two zones serves as a control zone. In a controllable attenuation circuit means are provided for applying a first control signal between the input and output of the attenuation element, the output being decoupled from ground with respect to high frequencies. The amplitude of the first signal is variable in such a manner that for minimum attenuation it possesses a value at which the p-n junction defining the input zone in the semiconductor body is biased in the forward direction, and to provide increased attenuation the first signal falls to a limiting value at which the p-n junction does not conduct. Means are also provided for applying a second control signal between the control zone, which is connected to ground for high frequencies, and the output. The amplitude of the second control signal is variable in such a manner that for minimum attenuation it possesses a value at which the p-n junction defining the control zone in the semiconductor body does not conduct current, and to provide increased attenuation up to a maximum amount, the signal increases with a polarity such that the p-n junction continuously conducts current to an increasing extent.
Inventors
- 👤 Gerhard Krause
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:50
CPC Classifications
H; H03; H03H; H03H7/00; H03H7/24; H03H7/25; H03H7/253; H03H7/255; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
91 words
An integrated attenuation element having a variable attenuation characteristic for high frequency signals, comprising: a semiconductor body of one conductivity type having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, a contact electrode carried on the face of said semiconductor body opposite to that containing said two zones, one of said zones operable as an input or output and said contact electrode operable as an output or input respectively for the high frequency signals, and control sources connected to said two zones.
Claim 2
Dependent Claim
91 words
An integrated attenuation element having a variable attenuation characteristic for high frequency signals, comprising: a semiconductor body of one conductivity type having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, a contact electrode carried on the face of said semiconductor body opposite to that containing said two zones, one of said zones operable as an input or output and said contact electrode operable as an output or input respectively for the high frequency signals, and control sources connected to said two zones.
Claim 3
Dependent Claim
91 words
An integrated attenuation element having a variable attenuation characteristic for high frequency signals, comprising: a semiconductor body of one conductivity type having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, a contact electrode carried on the face of said semiconductor body opposite to that containing said two zones, one of said zones operable as an input or output and said contact electrode operable as an output or input respectively for the high frequency signals, and control sources connected to said two zones.
Claim 4
Dependent Claim
91 words
An integrated attenuation element having a variable attenuation characteristic for high frequency signals, comprising: a semiconductor body of one conductivity type having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, a contact electrode carried on the face of said semiconductor body opposite to that containing said two zones, one of said zones operable as an input or output and said contact electrode operable as an output or input respectively for the high frequency signals, and control sources connected to said two zones.
Claim 5
Dependent Claim
28 words
An attenuation element as claimed in claim 1, wherein said zones of said other conductivity type are arranged in alignment in a row with respect to one another.
Claim 6
Dependent Claim
61 words
An attenuation element as claimed in claim 1, comprising a third zone of said one conductivity type formed in said opposite face of said semiconductor body, said semiconductor body and said third zone being doped and said third zone having a doping concentration which is high in comparison to that of said semiconductor body, said contact electrode contacting said third zone.
Claim 7
Dependent Claim
25 words
An attenuation element as claimed in claim 1, comprising an electrode on said semiconductor body adjacent to said zone which serves as said input zone.
Claim 8
Dependent Claim
24 words
An attenuation element as claimed in claim 4, wherein said electrode is in the form of a contact which directly contacts said semiconductor body.
Claim 9
Dependent Claim
140 words
An integrated attenuation element having a variable attenuation characteristic for high frequency signals, comprising: a semiconductor body of one conductivity type having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, a contact electrode carried on the face of said semiconductor body opposite to that containing said two zones, one of said zones operable as an input or output and said contact electrode operable as an output or input respectively for the high frequency signals, and the other of said zones operable as a control zone, and an electrode on said semiconductor body adjacent to said zone which serves as said input zone, said electrode including a further zone of said one conductivity type arranged in said semiconductor body adjacent to said input zone and a contact carried on said further zone.
Claim 10
Dependent Claim
140 words
An integrated attenuation element having a variable attenuation characteristic for high frequency signals, comprising: a semiconductor body of one conductivity type having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, a contact electrode carried on the face of said semiconductor body opposite to that containing said two zones, one of said zones operable as an input or output and said contact electrode operable as an output or input respectively for the high frequency signals, and the other of said zones operable as a control zone, and an electrode on said semiconductor body adjacent to said zone which serves as said input zone, said electrode including a further zone of said one conductivity type arranged in said semiconductor body adjacent to said input zone and a contact carried on said further zone.
Claim 11
Dependent Claim
22 words
An attenuation element as claimed in claim 6, wherein said further zone is provided in said opposite face of said semiconductor body.
Claim 12
Dependent Claim
22 words
An attenuation element as claimed in claim 6, wherein said further zone is provided in said one face of said semiconductor body.
Claim 13
Dependent Claim
32 words
An attenuation element as claimed in claim 8, wherein said zones of said other conductivity type and said further zone are arranged in alignment in a row with respect to one another.
Claim 14
Dependent Claim
284 words
A controllable attenuation circuit arrangement, comprising: an integrated attenuation element having a variable attenuation characteristic for high frequency signals including a semiconductor body of one conductivity type and having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, said semiconductor body having a contact electrode on the face opposite to that containing said two zones, one of said zones serving as an input or output and said contact electrode serving as an output or input respectively for high frequency signals, and the other of said zones serving as a control zone; means for applying a first control signal between said input zone and said contact electrode, means for decoupling high frequency signals at said input zone with respect to ground, the amplitude of said first signal being variable in such a manner that for minimal attenuation it possesses a value at which the p-n junction between said input zone and said semiconductor body is biased in the pass direction, and said input signal falls to a limit value at which the p-n junction does not conduct a current, to provide maximum attenuation; and means for applying a second control signal between said control zone and said contact electrode, said control zone connected to ground with respect to high frequencies, the amplitude of said second signal being variable in such a manner that for minimal attenuation it possesses a value at which the p-n junction between said control zone and said semiconductor body does not conduct a current and to produce increasing attenuation up to a maximum attenuation the amplitude is increased with a polarity such that the p-n junction continuously conducts current to an increasing extent.
Claim 15
Dependent Claim
284 words
A controllable attenuation circuit arrangement, comprising: an integrated attenuation element having a variable attenuation characteristic for high frequency signals including a semiconductor body of one conductivity type and having opposite faces, two zones of the opposite conductivity type arranged in one face of said semiconductor body, said semiconductor body having a contact electrode on the face opposite to that containing said two zones, one of said zones serving as an input or output and said contact electrode serving as an output or input respectively for high frequency signals, and the other of said zones serving as a control zone; means for applying a first control signal between said input zone and said contact electrode, means for decoupling high frequency signals at said input zone with respect to ground, the amplitude of said first signal being variable in such a manner that for minimal attenuation it possesses a value at which the p-n junction between said input zone and said semiconductor body is biased in the pass direction, and said input signal falls to a limit value at which the p-n junction does not conduct a current, to provide maximum attenuation; and means for applying a second control signal between said control zone and said contact electrode, said control zone connected to ground with respect to high frequencies, the amplitude of said second signal being variable in such a manner that for minimal attenuation it possesses a value at which the p-n junction between said control zone and said semiconductor body does not conduct a current and to produce increasing attenuation up to a maximum attenuation the amplitude is increased with a polarity such that the p-n junction continuously conducts current to an increasing extent.
Claim 16
Dependent Claim
99 words
A controllable attenuation circuit arrangement according to claim 10, wherein an electrode is provided on said semiconductor body adjacent to said input zone, and comprising means for providing a control signal between said electrode and said contact electrode, the amplitude of said control signal beiNg variable so that in case of high degrees of attenuation it provides a potential difference between said input zone and said further zone at which the differential resistance between said input zone and said further zone is approximately equal to the surge impedance of an input line to be connected to said input zone.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-10 | 1978-09-09 | 1979-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-10 | 1982-09-09 | 1983-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-10 | 1986-09-09 | 1987-03-11 | $7700.00 | Window Closed / Lapsed |