Abstract An interconnection pattern involving crossover of conductive paths is provided by a process which involves forming the first conductive pattern by depositing a continuous layer of a conductive material which is convertible in situ to an insulator and, after masking to define the desired first conductive pattern, converting the rest of the layer to an insulator. Then after providing an insulating layer over the first conductive pattern the second conductive pattern is formed over the first conductive pattern. In one embodiment, the first continuous layer is polycrystalline conducting silicon to which is applied a silicon nitride mask to define the first conductive pattern. After conversion of the unmasked silicon to silicon dioxide the mask serves to insulate the first conductive pattern from the subsequently formed second conductive pattern at the crossovers.
A METHOD FOR FORMING A CROSSOVER INTERCONNECTION PATTERN FOR A SILICON INTEGRATED CIRCUIT DEVICE COMPRISING THE STEPSOF DEPOSITING A LAYER OF A CONDUCTIVE MATERIAL WHICH CAN BE SELECTIVELY CONVERTED TO AN INSULATOR OVER AN INSULATORCOATED MONOCRYSTALLINE SEMICONDUCTIVE WAFER, THE LAYER MAKING CONNECTION TO THE WAFER AT SELECTED REGIONS, PROVIDING AN INSULATING MASK OVER THE LAYER, TO PROTECT A REGION OF THE LAYER CORRESPONDING TO A DESIRED FIRST CONDUCTIVE PATTERN, EXPOSING THE MASKED WAFER TO AN OXIDIZING ATMOSPHERE TO CONVERT THE UNPROTECTED REGION OF THE LAYER TO AN OXIDE AND TO FORM THE FIRST CONDUCTIVE PATTERN IMBEDDED IN SUCH OXIDE,
Claim 2
Independent Claim
99 words
A METHOD FOR FORMING A CROSSOVER INTERCONNECTION PATTERN FOR A SILICON INTEGRATED CIRCUIT DEVICE COMPRISING THE STEPSOF DEPOSITING A LAYER OF A CONDUCTIVE MATERIAL WHICH CAN BE SELECTIVELY CONVERTED TO AN INSULATOR OVER AN INSULATORCOATED MONOCRYSTALLINE SEMICONDUCTIVE WAFER, THE LAYER MAKING CONNECTION TO THE WAFER AT SELECTED REGIONS, PROVIDING AN INSULATING MASK OVER THE LAYER, TO PROTECT A REGION OF THE LAYER CORRESPONDING TO A DESIRED FIRST CONDUCTIVE PATTERN, EXPOSING THE MASKED WAFER TO AN OXIDIZING ATMOSPHERE TO CONVERT THE UNPROTECTED REGION OF THE LAYER TO AN OXIDE AND TO FORM THE FIRST CONDUCTIVE PATTERN IMBEDDED IN SUCH OXIDE,
Claim 3
Dependent Claim
27 words
The method of claim 1 including the additional step of forming a continuous insulating layer over the imbedded conductive pattern prior to forming the second conductive pattern.
Claim 4
Dependent Claim
16 words
The method of claim 1 in which the imbedded conductive layer is of polycrystalline conductive silicon.
Claim 5
Dependent Claim
16 words
The method of claim 1 in which the imbedded conductive layer is of a film-forming metal.
Claim 6
Dependent Claim
13 words
The method of claim 1 in which the mask is of silicon nitride.
Claim 7
Dependent Claim
22 words
The method of claim 5 in which the silicon nitride mask serves as the insulation between the first and second conductive patterns.