Patent US3864818A successfully refreshed from Google Patents.
US3864818A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a target for a camera tube with a mosaic of regions forming rectifying junctions
Assignee: US Philips Corp
•
Filing: 1973-02-20
•
Granted: 1975-02-11
•
Expires: 1993-02-20
Abstract
Abstract A television camera tube and method of manufacturing the same having a target comprising a substrate provided with a mosaic of regions separated from one another by grooves, each of the regions forming a rectifying junction with the substrate.
Inventors
- 👤 Else Kooi
- 👤 Arthur Marie Eugen Hoeberechts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 01:31
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J9/00; H01J9/20; H01J9/233; H10D; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/145; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
107 words
A METHOD OF MANUFACTURING A RADIATION-SENSITIVE TARGET PLATE FOR USE IN A CAMERA TUBE COMPRISING A SEMI-CONDUCTOR PLATE HAVING ON ONE SIDE THEREOF A MOSAIC OF PROJECTING REGIONS SEPARATED FROM ONE ANOTHER BY GROOVES AND EACH FORMING WITH THE PLATE A RECTIFYING JUNCTION COMPRISING THE STEPS OF PROVIDING AN APERTURED MASKING LAYER ON ONE SURFACE OF A PLATE OF SEMI-CONDUCTOR MATERIAL HAVING ADJACENT SAID SURFACE A ZONE OF ONE CONDUCTIVITY TYPE, REMOVING MATERIAL FROM THE SURFACE OF THE PLATE AT THE AREA OF THE APERTURES IN SAID APERTURED MASKING LAYER TO OBTAIN GROOVES OF A GIVEN DEPTH SEPARATING THE REGIONS, OXIDIZING THE SEMICONDUCTOR PLATE ONLY IN THE
Claim 2
Independent Claim
107 words
A METHOD OF MANUFACTURING A RADIATION-SENSITIVE TARGET PLATE FOR USE IN A CAMERA TUBE COMPRISING A SEMI-CONDUCTOR PLATE HAVING ON ONE SIDE THEREOF A MOSAIC OF PROJECTING REGIONS SEPARATED FROM ONE ANOTHER BY GROOVES AND EACH FORMING WITH THE PLATE A RECTIFYING JUNCTION COMPRISING THE STEPS OF PROVIDING AN APERTURED MASKING LAYER ON ONE SURFACE OF A PLATE OF SEMI-CONDUCTOR MATERIAL HAVING ADJACENT SAID SURFACE A ZONE OF ONE CONDUCTIVITY TYPE, REMOVING MATERIAL FROM THE SURFACE OF THE PLATE AT THE AREA OF THE APERTURES IN SAID APERTURED MASKING LAYER TO OBTAIN GROOVES OF A GIVEN DEPTH SEPARATING THE REGIONS, OXIDIZING THE SEMICONDUCTOR PLATE ONLY IN THE
Claim 3
Dependent Claim
26 words
A method as claimed in claim 1, wherein the material is removed by etching and an etchant and oxidation-resistant masking layer containing silicon nitride is used.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 1, wherein layers of substantially the same compositions are used as a masking layer and as a first insulating oxide layer.
Claim 5
Dependent Claim
58 words
A method as claimed in claim 3, wherein the masking layer is removed by providing the surface of the semiconductor plate with an etchant-resistant positive photolacquer layer, the photolacquer layer is exposed for a period of time which is short as compared with conventional exposure times and is then developed, after which the masking layer is etched away.
Claim 6
Dependent Claim
27 words
A method as claimed in claim 1, wherein the material is removed by etching and an etchant and oxidation-resistant metal layer is used as a masking layer.
Claim 7
Dependent Claim
82 words
A method as claimed in claim 1 wherein prior to the oxidation an impurity of one conductivity type is diffused in the substrate via the walls of the grooves so as to obtain a first more highly doped surface zone of the same conductivity type as the substrate, the maximum concentration of said impurity in the first surface zone being smaller than that of the impurity of the opposite conductivity type in those parts of the regions which adjoin the rectifying junctions.
Claim 8
Dependent Claim
39 words
A method as claimed in claim 1 wherein the masking layer is removed from the regions after the side of the substrate opposite the side to be scanned has been subjected to a treatment for reducing surface recombination effects.
Claim 9
Dependent Claim
49 words
A method as claimed in claim 6 wherein simultaneously with the diffusion of the impurity to obtain the first surface zone, the same impurity is diffused in the substrate, via the other side, to obtain a second surface zone to reduce surface recombination effects on the said other side.
Claim 10
Dependent Claim
74 words
A method as claimed in claim 1, wherein via the surfaces of parts of the regions to be obtained an impurity of one conductivity type is diffused to obtain two sub-regions per region which together with the substrate form a transistor structure and, simultaneously with said diffusion, the same impurity is diffused in the substrate via the other side to obtain a second surface zone to reduce surface recombination effects on the other side.
Claim 11
Dependent Claim
38 words
A method as claimed in claim 1 wherein the other side of the semi-conductor plate is oxidized to obtain a second oxide layer to reduce surface recombination effects simultaneously with the oxidation to obtain the first oxide layer.
References Cited (Backward Citations)
US3385729A
Cited
US3491434A
Cited
US3423623A
Cited
US3432919A
Cited
US3534234A
Cited
US3487272A
Cited
US3466510A
Cited
US3537921A
Cited
US3523223A
Cited
US3535774A
Cited
US3532539A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-10 | 1978-08-12 | 1979-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-10 | 1982-08-12 | 1983-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-10 | 1986-08-12 | 1987-02-11 | $7700.00 | Window Closed / Lapsed |