US3864720A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting junction device employing a glassy amorphous material as an active layer
Assignee: INNOTECH Corp
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Filing: 1973-11-13
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Granted: 1975-02-04
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Expires: 1993-11-13
Abstract
Abstract A semiconductive junction device comprises a thin layer of a glassy amorphous material exhibiting one type of conductivity (either N or P) disposed upon a semiconductive substrate possessing the other kind of conductivity. The glassy layer is sufficiently thin that is exhibits a useful level of conductivity. Preferably, the glassy layer is ion impermeable so that the device remains stable under a wide range of operating conditions. These junctions behave as diodes and can be incorporated in a wide variety of complex semiconductive devices.
Inventors
- 👤 Seymour Merrin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:28
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F99/00; H10D; H10D62/00; H10D62/80; H10D62/82; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
A LIGHT EMITTING DIODE COMPRISING A FIRST ACTIVE LAYER OF SEMICONDUCTOR MATERIAL HAVING ONE TYPE OF ELECTRONIC CONDUCTIVITY, AND DISPOSED UPON SAID FIRST LAYER AND FORMING A RECTIFYING JUNCTION THEREWITH, A SECOND SEMICONDUCTING ACTIVE LAYER OF MATERIAL HAVING THE OTHER TYPE OF CONDUCTIVITY, SAID DEVICE CHARACTERIZED IN THAT SAID SECOND LAYER IS A LAYER OF NONCRYSTALLINE GLASSY AMORPHOUS MATERIAL HAVING A THICKNESS WHICH IS SUFFICIENTLY THIN TO POSSESS CONDUCTIVITY.
Claim 2
Dependent Claim
69 words
A LIGHT EMITTING DIODE COMPRISING A FIRST ACTIVE LAYER OF SEMICONDUCTOR MATERIAL HAVING ONE TYPE OF ELECTRONIC CONDUCTIVITY, AND DISPOSED UPON SAID FIRST LAYER AND FORMING A RECTIFYING JUNCTION THEREWITH, A SECOND SEMICONDUCTING ACTIVE LAYER OF MATERIAL HAVING THE OTHER TYPE OF CONDUCTIVITY, SAID DEVICE CHARACTERIZED IN THAT SAID SECOND LAYER IS A LAYER OF NONCRYSTALLINE GLASSY AMORPHOUS MATERIAL HAVING A THICKNESS WHICH IS SUFFICIENTLY THIN TO POSSESS CONDUCTIVITY.
Claim 3
Dependent Claim
16 words
The device of claim 1 further characterized in that said glassy amorphous material is optically transparent.
Claim 4
Dependent Claim
24 words
The device of claim 1 further characterized in that said light emitting junction has a roughened texture to increase the light emitting surface area.
Claim 5
Dependent Claim
19 words
A device according to claim 1 wherein said first active layer of semiconductor material is a single crystal semiconductor.
Claim 6
Dependent Claim
18 words
A device according to claim 1 wherein said first active layer of semiconductor material is a polycrystalline semiconductor.
Claim 7
Dependent Claim
17 words
A device according to claim 1 wherein said first active layer of semiconductor material is silicon carbide.
Claim 8
Dependent Claim
15 words
A device according to claim 1 wherein said glass amorphous material is an oxidic glass.
Claim 9
Dependent Claim
16 words
A device according to claim 1 wherein said glassy amorphous material is a homogeneous oxidic glass.
Claim 10
Dependent Claim
24 words
A device according to claim 1 wherein said glassy amorphous material is a material having a specific resistivity in excess of about 1012 ohm-cm.
References Cited (Backward Citations)
US3451126A
Cited
US3564353A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-03 | 1978-08-05 | 1979-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-03 | 1982-08-05 | 1983-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-03 | 1986-08-05 | 1987-02-04 | $7700.00 | Window Closed / Lapsed |