US3864716A
Expired / Lapsed
US
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Rectifying junction device employing a glassy amorphous material as an active layer
Assignee: INNOTECH Corp
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Filing: 1973-11-13
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Granted: 1975-02-04
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Expires: 1993-11-13
Abstract
Abstract A semiconductive junction device comprises a thin layer og a glassy amorphous material exhibiting one type of conductivity (either N or P) disposed upon a semiconductive substrate possessing the other kind of conductivity. The glassy layer is sufficiently thin that it exhibits a useful level of conductivity. Preferably, the glassy layer is ion impermeable so that the device remains stable under a wide range of operating conditions. These junctions behave as diodes and can be incorporated in a wide variety of complex semiconductive devices.
Inventors
- 👤 Seymour Merrin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10F; H10F99/00; H10D99/00; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
79 words
A SEMICONDUCTOR JUNCTION DEVICE OF THE TYPE COMPRISING A FIRST SEMICONDUCTING (ACTIVE) LAYER OR MATERIAL HAVING ONE TYPE OF ELECTRONIC CONDUCTIVITY AND, DISPOSED IN CONTACT WITH SAID FIRST SEMICONDUCTING LAYER FORMING A RECTIFYING (DIODE) JUCTION THEREWITH, A SECOND SEMICONDUCTING (ACTIVE) LAYER OF OF ELECTRONIC CONDUCTIVITY, SAID DEVICE CHARACTERIZED IN THAT AT LEAST ONE OF SAID SEMICONDUCTING (ACTIVE) LAYERS OF MATERIAL IS A (AN INSULATING) LAYER OF NONCRYSTALLINE GLASSY AMORPHOUS MATERIAL HAVING A SPECIFIC RESISTIVITY IN EXCESS OF ABOUT 10**12OHM-CM.
Claim 2
Dependent Claim
79 words
A SEMICONDUCTOR JUNCTION DEVICE OF THE TYPE COMPRISING A FIRST SEMICONDUCTING (ACTIVE) LAYER OR MATERIAL HAVING ONE TYPE OF ELECTRONIC CONDUCTIVITY AND, DISPOSED IN CONTACT WITH SAID FIRST SEMICONDUCTING LAYER FORMING A RECTIFYING (DIODE) JUCTION THEREWITH, A SECOND SEMICONDUCTING (ACTIVE) LAYER OF OF ELECTRONIC CONDUCTIVITY, SAID DEVICE CHARACTERIZED IN THAT AT LEAST ONE OF SAID SEMICONDUCTING (ACTIVE) LAYERS OF MATERIAL IS A (AN INSULATING) LAYER OF NONCRYSTALLINE GLASSY AMORPHOUS MATERIAL HAVING A SPECIFIC RESISTIVITY IN EXCESS OF ABOUT 10**12OHM-CM.
Claim 3
Dependent Claim
40 words
A device according to claim 1 further characterized in that each of said active layers of insulating glassy amorphous material is sufficiently thin that the rectifying characteristics of the junction predominate over the resistive characteristics of the glassy amorphous material.
Claim 4
Dependent Claim
70 words
A semiconductor junction device of the type comprising a first semiconducting (active) layer of material having one type of electronic conductivity and, disposed in contact with said first semiconducting layer forming a rectifying (diode) junction therewith, a second semiconducting (active) layer of material having the other type of electronic conductivity, said device characterized in that at least one of said semiconducting (active) layers of material is a non-crystalline oxidic glass.
Claim 5
Dependent Claim
70 words
A semiconductor junction device of the type comprising a first semiconducting (active) layer of material having one type of electronic conductivity and, disposed in contact with said first semiconducting layer forming a rectifying (diode) junction therewith, a second semiconducting (active) layer of material having the other type of electronic conductivity, said device characterized in that at least one of said semiconducting (active) layers of material is a non-crystalline oxidic glass.
Claim 6
Dependent Claim
26 words
A device according to claim 3 further characterized in that said oxidic glass has a specific resistivity in excess of about 1012ohm-cm (is an insulating glass).
Claim 7
Dependent Claim
48 words
A device according to claim 4 (4) further characterized in that said layer of oxidic glass (is an insulating glass and in that each of said active glass layers) is sufficiently thin that the rectifying (diode) characteristics of the junction predominate over the resistive characteristics of said glass.
Claim 8
Dependent Claim
23 words
A device according to claim 3 wherein each of said first and second semiconducting layers of material are layers of glassy amorphous material.
Claim 9
Dependent Claim
22 words
A device according to claim 1 wherein said layer of glassy amorphous material has a thickness of less than about 1.5 microns.
Claim 10
Dependent Claim
30 words
A device according to claim 1 wherein said layer of glassy amorphous is predominantly comprised of one or more phases selected from the group consisting of PbSiO3,Pb6Al2Si6O21, ZnB2O4 and Zn2SiO4.
Claim 11
Dependent Claim
21 words
A device according to claim 3 wherein the layer of oxidic glass has a thickness of less than about 1.5 microns.
Claim 12
Dependent Claim
32 words
A device according to claim 3 wherein the layer of glass is a glass predominantly comprised of one or more phases selected from the group consisting of PbSiO3, Pb6Al2Si6O21, ZnB2O4 and Zn2SiO4.
Claim 13
Dependent Claim
37 words
A device according to claim 3 wherein the layer of glass is a glass comprised of at least 50 mole percent of one or more phases selected from the group consisting of PbSiO3, Pb6Al2Si6O21, ZnB2O4 and Zn2SiO4.
Claim 14
Dependent Claim
37 words
A device according to claim 3 wherein the layer of glass is a glass comprised of at least 70 mole percent of one or more phases selected from the group consisting of PbSiO3, Pb6Al2Si6O21, ZnB2O4 and Zn2SiO4.
Claim 15
Dependent Claim
27 words
A device according to claim 3 wherein the layer of glass is a glass selected from the group consisting of lead-boro-alumino-silicate glass, zinc-boro-alumino-silcate glass and zinc-boro-alumIno-silcate glass.
Claim 16
Dependent Claim
18 words
A device according to claim 3 wherein the layer of glass is a homogeneous layer of oxidic glass.
Claim 17
Dependent Claim
16 words
A device according to claim 1 wherein one of said semiconducting layers is a monocrystalline semiconductor.
Claim 18
Dependent Claim
18 words
A device according to claim 1 wherein one of said semiconducting layers is a layer of polycrystalline semiconductor.
Claim 19
Dependent Claim
14 words
A device according to claim 1 wherein one of said semiconducting layers is silicon.
Claim 20
Dependent Claim
69 words
An insulating photoconductive junction device comprising a first active layer of material having one type of electronic conductivity and, disposed in contact with said first active layer and forming a rectifying junction therewith, a second active layer of material having the other kind of electronic conductivity, said device characterized in that at least one of said active layers of material is a layer of insulating, non-crystalline glassy amorphous material.
Claim 21
Dependent Claim
69 words
An insulating photoconductive junction device comprising a first active layer of material having one type of electronic conductivity and, disposed in contact with said first active layer and forming a rectifying junction therewith, a second active layer of material having the other kind of electronic conductivity, said device characterized in that at least one of said active layers of material is a layer of insulating, non-crystalline glassy amorphous material.
Claim 22
Dependent Claim
16 words
A device according to claim 18 wherein one of said active layers is a monocrystalline semiconductor.
Claim 23
Dependent Claim
16 words
A device according to claim 18 wherein one of said active layers is a polycrystalline semiconductor.
Claim 24
Dependent Claim
14 words
A device according to claim 18 wherein one of said active layers is silicon.
References Cited (Backward Citations)
US3451126A
Cited
US3564353A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-03 | 1978-08-05 | 1979-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-03 | 1982-08-05 | 1983-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-03 | 1986-08-05 | 1987-02-04 | $7700.00 | Window Closed / Lapsed |