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US3863167A
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Parametric moving field amplifier
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1973-07-06
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Granted: 1975-01-28
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Expires: 1993-07-06
Abstract
Abstract A parametric moving field amplifier comprises an amplifier with a metal insulator semiconductor structure.
Inventors
- 👤 Dr Wolfgang Harth
- 👤 Jorg Muller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:16
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/54; H03F3/55; H10; H10N; H10N70/00; H10N70/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
125 words
A parametric moving field amplifier comprising in combination: a semiconductor body; a layer of insulating material on one surface of said semiconductor body; a striplike metal conductor on the surface of said insulating layer and extending along the length thereof, said conductor having a width which is less than the width of said insulating layer and of said semiconductor body, said width of said conductor varying along the length of said conductor and having a periodic structure with different strip widths, said periodic structure being dimensioned to form a low pass filter with the limiting frequency of the filter being immediately above the pumping frequency of the amplifier; and an electrical contact applied to the surface of said semiconductor body opposite to said one surface.
Claim 2
Dependent Claim
125 words
A parametric moving field amplifier comprising in combination: a semiconductor body; a layer of insulating material on one surface of said semiconductor body; a striplike metal conductor on the surface of said insulating layer and extending along the length thereof, said conductor having a width which is less than the width of said insulating layer and of said semiconductor body, said width of said conductor varying along the length of said conductor and having a periodic structure with different strip widths, said periodic structure being dimensioned to form a low pass filter with the limiting frequency of the filter being immediately above the pumping frequency of the amplifier; and an electrical contact applied to the surface of said semiconductor body opposite to said one surface.
Claim 3
Dependent Claim
21 words
An amplifier as defined in claim 1, wherein said semiconductor has a specific resistance between 5.10 2 and 5.10 1 Ohmcm.
Claim 4
Dependent Claim
20 words
An amplifier as defined in claim 2, wherein said insulating layer has a thickness of between 500 and 2000 A.
Claim 5
Dependent Claim
19 words
An amplifier as defined in claim 3, wherein said conductive path has a width of between 10 and 50/um.
Claim 6
Dependent Claim
12 words
An amplifier as defined in claim 1, wherein said semiconductor comprises silicon.
Claim 7
Dependent Claim
21 words
An amplifier as defined in claim 5, wherein said insulator consists of one of the group consisting of SiO2, Si3N4, Al2O3.
Claim 8
Dependent Claim
17 words
An amplifier as defined in claim 5, wherein said insulator comprises double layers of SiO2 and Si3N4.
Claim 9
Dependent Claim
17 words
An amplifier as defined in claim 5, wherein said insulator comprises double layers of SiO2 and Al2O3.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-01-27 | 1978-07-29 | 1979-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-01-27 | 1982-07-29 | 1983-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-01-27 | 1986-07-29 | 1987-01-28 | $7700.00 | Window Closed / Lapsed |