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Low temperature plasma anodization apparatus

Assignee: International Business Machines Corp
•
Filing: 1972-08-30
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Granted: 1975-01-28
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Expires: 1992-08-30
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Abstract

Abstract A method of forming a resistive barrier film on an electrically conducting body of an anodizable material through reaction of negative ions with positive ions in a plasma with the positive ions of the anodizable material. A grid of positively charged wires, in the plasma adjacent the anodizable material, absorbs the low energy or cold electrons, while trapping the hot electrons in a potential well of considerable spatial extent, so that the anodization process is speeded up.

Inventors

  • 👤 John F O'hanlon
  • 👤 William B Pennebaker

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 17:02
CPC Classifications
C; C25; C25D; C25D11/00; C25D11/005; C23; C23C; C23C8/00; C23C8/06; C23C8/36; C25D11/02; C25D11/026; Y; Y10; Y10S; Y10S422/00; Y10S422/906

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 115 words
In an anodizing system comprising a gaseous plasma composed of ions and electrons, the latter having a certain ratio of high energy electrons to low energy electrons, means for supporting a metal film to be anodized in said plasma, a first electrode supported in said chamber and maintained at a negative potential, means for applying a positive potential with respect to said first electrode to said metal film so as to support anodization of said film, and a grid supported in said chamber, and biased positively with respect to said plasma so as to increase said ratio of high energy electrons to low energy electrons in said plasma during the anodization of said metal film.
Claim 2
Dependent Claim 115 words
In an anodizing system comprising a gaseous plasma composed of ions and electrons, the latter having a certain ratio of high energy electrons to low energy electrons, means for supporting a metal film to be anodized in said plasma, a first electrode supported in said chamber and maintained at a negative potential, means for applying a positive potential with respect to said first electrode to said metal film so as to support anodization of said film, and a grid supported in said chamber, and biased positively with respect to said plasma so as to increase said ratio of high energy electrons to low energy electrons in said plasma during the anodization of said metal film.
Claim 3
Dependent Claim 25 words
In the anodizing system of claim 1 wherein the positively biased electrode grid is between 5 to 10 cm from said metal to be anodized.
Claim 4
Dependent Claim 19 words
In the anodizing system of claim 1 wherein said positively biased grid consists of a plurality of fine wires.
Claim 5
Dependent Claim 20 words
In the anodizing system of claim 3 wherein said fine wires are of the order of 0.001 inch in diameter.
Claim 6
Dependent Claim 13 words
In the anodizing system of claim 3 wherein said fine wires are platinum.

References Cited (Backward Citations)

US3394066A Cited
US3650929A Cited
US3650930A Cited
US3730863A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-01-27 1978-07-29 1979-01-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-01-27 1982-07-29 1983-01-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-01-27 1986-07-29 1987-01-28 $7700.00 Window Closed / Lapsed

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