US3860916A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical information storage device
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1973-03-30
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Granted: 1975-01-14
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Expires: 1993-03-30
Abstract
Abstract Disclosed is an optical information storage device using a composite structure of Conductor-Insulator-Semiconductor. A large number of such devices when combined to form a matrix array, will provide an optical pattern memory to permit an optical pattern to be directly stored and to be retrieved either in visible form or in analogue output signal form.
Inventors
- 👤 Yasuo Tarui
- 👤 Yoshio Komiya
- 👤 Tsunenori Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:21
CPC Classifications
H; H04; H04N; H04N7/00; H04N7/002; H04N7/005; G; G11; G11C; G11C13/00; G11C13/04; G11C13/048; G11C27/00; G11C27/005; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
130 words
An optical information storage and regeneration device comprising in combination, a semiconductor substrate, an insulating layer disposed on a main surface of said semiconductor substrate, a charge storage means inbedded in said insulating layer, a conductor layer insulated by said insulating layers from said semiconductor substrate, stored electronic charges in said charge storage means of said insulating layer being changed by amounts of incident optical rays and amounts of a electrical signal applied between said conductor layer and parts of said semiconductor substrate, and a means for optically regenerating information which is represented by a plane distribution of said amount of stored electronic charges in said charge storage means, the output of said regenerated optical information being modulated according to said amount of electronic charges in said charge storage means.
Claim 2
Dependent Claim
130 words
An optical information storage and regeneration device comprising in combination, a semiconductor substrate, an insulating layer disposed on a main surface of said semiconductor substrate, a charge storage means inbedded in said insulating layer, a conductor layer insulated by said insulating layers from said semiconductor substrate, stored electronic charges in said charge storage means of said insulating layer being changed by amounts of incident optical rays and amounts of a electrical signal applied between said conductor layer and parts of said semiconductor substrate, and a means for optically regenerating information which is represented by a plane distribution of said amount of stored electronic charges in said charge storage means, the output of said regenerated optical information being modulated according to said amount of electronic charges in said charge storage means.
Claim 3
Dependent Claim
42 words
The optical information storage and regeneration device according to claim 1, having means for regenerating optical information which modulates a light intensity generated by a P-N junction in said substrate according to said amount of stored charges in said charge storage means.
Claim 4
Dependent Claim
49 words
The optical information storage and regeneration device according to claim 1, having means for regenerating optical information which modulates a light intensity generated in said semiconductor substrate by applying a large a.c. signal to said conductor-insulator-semiconductor structure according to said amount of stored charges in said charge storage means.
Claim 5
Dependent Claim
57 words
The optical information storage and regeneration device according to claim 1, having a liquid crystal layer between said insulator and conductor layer, a means for optically regenerating information which modulates the change in the optical properties of said liquid crystal provided on said insulating layer according to said amount of stored charges in said charge storage means.
Claim 6
Dependent Claim
19 words
The optical information storage device according to claim 1 wherein said insulator layer is of a single layer composition.
Claim 7
Dependent Claim
20 words
The optical information storage device according to claim 1 wherein said insulator layer is composed of a double layer composition.
Claim 8
Dependent Claim
20 words
The optical information storage device according to claim 6 wherein said double insulator layer is made of Si3N4-SiO2 or Al2O3-SiO2.
Claim 9
Dependent Claim
18 words
The optical information storage device according to claim 1 wherein said insulator layer has conductor pieces incorporated therein.
Claim 10
Dependent Claim
18 words
The optical information storage device according to claim 8 wherein said conductor pieces and conductor layer are transparent.
References Cited (Backward Citations)
US3500142A
Cited
US3746867A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-01-13 | 1978-07-15 | 1979-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-01-13 | 1982-07-15 | 1983-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-01-13 | 1986-07-15 | 1987-01-14 | $7700.00 | Window Closed / Lapsed |