US3746867A
Expired / Lapsed
US
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Radiation responsive signal storage device
Assignee: Massachusetts Institute of Technology
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Filing: 1971-04-19
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Granted: 1973-07-17
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Expires: 1991-04-19
Abstract
Abstract Incident radiation (write-in radiation) is directed to a metalinsulator-semiconductor sandwich which defines a photo-detector in electrical circuit with electrical charge storage means, so that the amount of charge stored by the sandwich is changed, causing a change in the electrical response of the sandwich to other radiation (read-out radiation) directed thereto. Thus, invormation represented by the write-in radiation is stored by the sandwich and later this stored information is read out by noting the electrical response to the read-out radiation.
Inventors
- 👤 R Phela
- 👤 J Dimmock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:55
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; G; G11; G11C; G11C13/00; G11C13/04; G11C13/048; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
166 words
A device for storing signals in response to radiation comprising, a solid state sandwich of contiguous layers including a layer of n-type semiconductor, a layer of dielectric and a layer of conductor, in that order, and subjected to an environment such that a substantial charge accumulation region exists in the semiconductor layer adjacent the dielectric layer, means for directing write-in radiation to the semiconductor of substantially greater photon energy than the semiconductor band gap and of sufficient intensity to release and energize charge in the semiconductor so that the charge transfers to the dielectric changing the charge accumulation region to a charge depletion region, an electrical conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the semiconductor of photon energy sufficient to release charge in said depletion region, producing an electrical signal in the utilization means which is representative of the charge depletion region in the semiconductor layer.
Claim 2
Independent Claim
166 words
A device for storing signals in response to radiation comprising, a solid state sandwich of contiguous layers including a layer of n-type semiconductor, a layer of dielectric and a layer of conductor, in that order, and subjected to an environment such that a substantial charge accumulation region exists in the semiconductor layer adjacent the dielectric layer, means for directing write-in radiation to the semiconductor of substantially greater photon energy than the semiconductor band gap and of sufficient intensity to release and energize charge in the semiconductor so that the charge transfers to the dielectric changing the charge accumulation region to a charge depletion region, an electrical conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the semiconductor of photon energy sufficient to release charge in said depletion region, producing an electrical signal in the utilization means which is representative of the charge depletion region in the semiconductor layer.
Claim 3
Dependent Claim
22 words
A device as in claim 1 wherein, the write-in radiation and the read-out radiation are directed to the semiconductor during different intervals.
Claim 4
Dependent Claim
26 words
A device as in claim 1 wherein, the intensity of the read-out radiation is relatively low so that the charge depletion region is not substantially altered.
Claim 5
Dependent Claim
23 words
A device as in claim 1 wherein, the intensity of the read-out radiation is substantially lower than the intensity of the write-in radiation.
Claim 6
Dependent Claim
25 words
A device as in claim 1 wherein, a negative voltage relative to the conductor layer is applied to the semiconductor while directing write-in radiation thereto.
Claim 7
Dependent Claim
25 words
A device as in claim 1 wherein, a positive voltage relative to the conductor layer is applied to the semiconductor while directing read-out radiation thereto.
Claim 8
Dependent Claim
17 words
A device as in claim 1 wherein, the dielectric material is the oxide of the semiconductor material.
Claim 9
Dependent Claim
23 words
A device as in claim 7 wherein, the semiconductor is InSb and the dielectric layer is formed thereon by anodizing a surface thereof.
Claim 10
Dependent Claim
30 words
A device as in claim 1 wherein, erase radiation is directed to the semiconductor while a suitable bias voltage is applied to the sandwich to erase the stored binary information.
Claim 11
Dependent Claim
21 words
A device as in claim 9 wherein, the photon energy of the erase radiation is substantially higher than the write-in radiation.
Claim 12
Dependent Claim
31 words
A device as in claim 9 wherein, a negative voltage relative to the conductive layer is applied to the conductive layer is applied to the semiconductor while directing erase radiatIon thereto.
Claim 13
Dependent Claim
94 words
A system for converting an optical image into electrical signals representative of the image comprising an array of devices as in claim 1 defining an image plane, the write-in radiation is an optical image focused on the image plane, all the devices in the array are connected in parallel with the utilization means, the read-out radiation is a scanning beam and means are provided for causing the scanning beam to scan the array in a pattern, whereby electrical signals are produced in the utilization means which combined with the scan pattern define the image.
Claim 14
Dependent Claim
27 words
A system as in claim 12 wherein, the array of devices in a continuous sheet which provides at each point thereon a device as in claim 1.
Claim 15
Dependent Claim
16 words
A system as in claim 12 wherein the dielectric layer is the oxide of the semiconductor.
Claim 16
Dependent Claim
23 words
A system as in claim 12 wherein the semiconductor is InSb and the dielectric layer is formed thereon by anodizing a surface thereof.
Claim 17
Dependent Claim
32 words
A system as in claim 12 wherein, the image radiation optical path is on one side of the array and the scanning beam path is on the opposite side of the array.
Claim 18
Dependent Claim
20 words
A system as in claim 16 wherein, the image radiation path is on the conductor layer side of the array.
Claim 19
Independent Claim
166 words
A device for storing signals in response to radiation comprising, a solid state sandwich of contiguous layers including a layer of p-type semiconductor, a layer of dielectric and a layer of conductor, in that order, and subjected to an environment such that a substantial charge depletion region exists in the semiconductor layer adjacent the dielectric layer, means for directing write-in radiation to the semiconductor of substantially greater photon energy than the semiconductor band gap and of sufficient intensity to release and energize charge in the semiconductor so that the charge transfers to the dielectric changing the charge electrical region to a charge accumulation region, an electric conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the semiconductor of photon energy sufficient to release charge in said accumulation region, producing an electrical signal in the utilization means which is representative of the charge accumulation region in the semiconductor layer.
Claim 20
Independent Claim
166 words
A device for storing signals in response to radiation comprising, a solid state sandwich of contiguous layers including a layer of p-type semiconductor, a layer of dielectric and a layer of conductor, in that order, and subjected to an environment such that a substantial charge depletion region exists in the semiconductor layer adjacent the dielectric layer, means for directing write-in radiation to the semiconductor of substantially greater photon energy than the semiconductor band gap and of sufficient intensity to release and energize charge in the semiconductor so that the charge transfers to the dielectric changing the charge electrical region to a charge accumulation region, an electric conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the semiconductor of photon energy sufficient to release charge in said accumulation region, producing an electrical signal in the utilization means which is representative of the charge accumulation region in the semiconductor layer.
Claim 21
Dependent Claim
22 words
A device as in claim 18 wherein, the write-in radiation and the read-out radiation are directed to the semiconductor during different intervals.
Claim 22
Dependent Claim
26 words
A device as in claim 18 wherein, the intensity of the read-out radiation is relatively low so that the charge accumulation region is not substantially altered.
Claim 23
Dependent Claim
23 words
A device as in claim 18 wherein, the intensity of the read-out radiation is substantially lower than the intensity of the write-in radiation.
Claim 24
Dependent Claim
30 words
A device as in claim 18 wherein erase radiation is directed to the semiconductor while a suitable bias voltage is applied to the sandwich to erase the stored binary information.
Claim 25
Independent Claim
122 words
A device responsive to incident radiation comprising, a solid state sandwich of contiguous layers including a layer of semiconductor, a layer of dielectric and a layer of conductor in that order, means for directing write-in radiation to the sandwich, whereby the amount of charge stored in the dielectric layer is changed, an electrical conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the sandwich, the write-in and read-out radiation being of substantially different wavelengths whereby the write-in radiation represents an input signal and the read-out radiation causes an electrical signal to be produced in the utilization means which is representative of said input signal.
Claim 26
Independent Claim
122 words
A device responsive to incident radiation comprising, a solid state sandwich of contiguous layers including a layer of semiconductor, a layer of dielectric and a layer of conductor in that order, means for directing write-in radiation to the sandwich, whereby the amount of charge stored in the dielectric layer is changed, an electrical conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the sandwich, the write-in and read-out radiation being of substantially different wavelengths whereby the write-in radiation represents an input signal and the read-out radiation causes an electrical signal to be produced in the utilization means which is representative of said input signal.
Claim 27
Independent Claim
116 words
A device respoNsive to incident radiation comprising, a solid state sandwich of contiguous layers including a layer of semiconductor, a layer of the oxide of the semiconductor and a layer of conductor, in that order, means for directing write-in radiation to the sandwich, whereby the amount of charge stored in the oxide layer is changed, an electrical conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the sandwich, whereby the write-in radiation represents an input signal and the read-out radiation causes an electrical signal to be produced in the utilization means which is representative of said input signal.
Claim 28
Independent Claim
116 words
A device respoNsive to incident radiation comprising, a solid state sandwich of contiguous layers including a layer of semiconductor, a layer of the oxide of the semiconductor and a layer of conductor, in that order, means for directing write-in radiation to the sandwich, whereby the amount of charge stored in the oxide layer is changed, an electrical conductor in contact with said semiconductor, utilization means in electrical circuit with the sandwich conductor and the contacting electrical conductor, and means for directing read-out radiation to the sandwich, whereby the write-in radiation represents an input signal and the read-out radiation causes an electrical signal to be produced in the utilization means which is representative of said input signal.
Claim 29
Independent Claim
107 words
A device responsive to incident radiation comprising, a solid state sandwich of contiguous layers including a layer of n-type InSb, a layer of dielectric formed by anodizing a surface of the InSb and a layer of conductor in that order, means for directing write-in radiation to the sandwich, whereby the amount of charge stored in the dielectric layer is changed utilization means in electrical circuit with the sandwich and means for directing readout radiation to the sandwich, whereby the write-in radiation represents an input signal and the read-out radiation causes an electrical signal to be produced in the utilization means which is representative of said input signal.
Claim 30
Independent Claim
107 words
A device responsive to incident radiation comprising, a solid state sandwich of contiguous layers including a layer of n-type InSb, a layer of dielectric formed by anodizing a surface of the InSb and a layer of conductor in that order, means for directing write-in radiation to the sandwich, whereby the amount of charge stored in the dielectric layer is changed utilization means in electrical circuit with the sandwich and means for directing readout radiation to the sandwich, whereby the write-in radiation represents an input signal and the read-out radiation causes an electrical signal to be produced in the utilization means which is representative of said input signal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-16 | 1977-01-15 | 1977-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-16 | 1981-01-15 | 1981-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-16 | 1985-01-15 | 1985-07-17 | $7700.00 | Window Closed / Lapsed |