Nitride composed masking for integrated circuits

Abstract

Abstract A method for selectively masking a substrate surface, as in the fabrication of a semiconductor device, which includes the steps of forming a first layer of a masking material, e.g., silicon dioxide, on a surface of the substrate, forming an adherent layer of a second masking material, e.g., silicon nitride, on the first layer, and then forming a second layer of silicon dioxide on the silicon nitride layer. Openings are formed extending through preselected locations in the second oxide layer to expose underlying regions in the silicon nitride layer in a preselected pattern. The portions of silicon nitride exposed through the openings are selectively removed to expose preselected portions of the underlying first oxide layer, and then the exposed portions of the first oxide layer are removed to define a composite diffusion mask exposing preselected portions of the surface of the silicon semiconducor body. Subsequent diffusion and metallization steps may be then effected to form a semiconductor device.

Inventors

• 👤 Wilton L Workman
• 👤 Billy M Martin

Bibliographic Details