US3858096A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contact member for semiconductor device having pressure contact
Assignee: Siemens AG
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Filing: 1972-08-04
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Granted: 1974-12-31
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Expires: 1992-08-04
Abstract
Abstract A semiconductor device includes a semiconductor component having two electrodes, pressure means for maintaining pressure contact with the semiconductor component, a housing enclosing the semiconductor component, electrodes and pressure means in a gastight manner, electrical insulating means electrically insulating portions of the housing in thermal and electrical contact with one of the electrodes from the portion of the housing in thermal and electrical contact with the other electrode, the electrical and thermal contact under pressure with the portion of the housing unbonded and by pressure only, and a contact member positioned between each of the electrodes and the portion of the housing and held in electrical and thermal contact under pressure between the electrodes and the portion of the housing, the contact members comprising sintered material having good thermal and electrical conductivity characteristics and a porosity of 2 to 40 percent, and further characterized by the contact members having surfaces with an expansion coefficient different from the expansion coefficient of the surfaces of the electrodes in contact therewith to permit gliding of the contacting surfaces relative to one another.
Inventors
- 👤 F Kuhrt
- 👤 H Schreiner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:15
CPC Classifications
H; H10; H10W; H10W72/00; B; B22; B22F; B22F7/00; B22F7/002; H10W72/20; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/321; H10W72/325; H10W72/351; H10W72/352
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
211 words
A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR COMPONENT HAVING TWO ELECTRODES; PRESSURE MEANS FOR MAINTAINING SAID ELECTRODES IN PRESSURE CONTACT WITH SAID SEMICONDUCTOR COMPONENT; A HOUSING ENCLOSING SAID SEMICONDUCTOR COMPONENT, SAID ELECTRODES AND SAID PRESSURE MEANS IN GASTIGHT MANNER, SAID HOUSING HAVING PORTIONS WITH GOOD THERMAL ELECTRICAL CONDUCTING CHARACTERISTICS AND SAID PRESSURE MEANS PRESSING SAID SEMICONDUCTOR COMPONENT AND SAID ELECTRODES TO PORTIONS OF SAID HOUSING; ELECTRICAL INSULATING MEANS ELECTRICALLY INSULATING THE PORTIONS OF THE HOUSING WHICH ARE IN THERMAL AND ELECTRICAL CONTACT WITH ONE OF SAID ELECTRODES FROM THE PORTION OF SAID HOUSING WHICH IS IN THERMAL AND ELECTRICAL CONTACT WITH THE OTHER OF SAID ELECTRODES WHEREBY AT LEAST ONE OF SAID ELECTRODES IS HELD IN ELECTRICAL AND THERMAL CONTACT UNDER PRESSURE WITH THE RESPECTIVE PORTION OF SAID HOUSING UNBONDED AND BY PRESSURE ONLY; AND A CONTACT MEMBER POSITIONED BETWEEN SAID ONE OF SAID ELECTRODES AND SAID PORTION OF SAID HOUSING AND HELD IN ELECTRICAL AND THERMAL CONTACT UNDER PRESSURE BETWEEN SAID ONE OF SAID ELECTRODES AND SAID PORTION OF SAID HOUSING, SAID CONTACT MEMBER COMPRISING SINTERED MATERIAL HAVING GOOD THERMAL AND ELECTRICAL CONDUCTIVITY CHARACTERISTICS AND A POROSITY OF 2 TO 40 PERCENT, SAID CONTACT MEMBER COMPRISING LUBRICATING MATERIAL SELECTED FROM THE GROUP CONSISTING OF GRAPHITE, MOLYBDEN (IV) SULPHIDE AND TUNGSTEN SELENIDE.
Claim 2
Dependent Claim
211 words
A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR COMPONENT HAVING TWO ELECTRODES; PRESSURE MEANS FOR MAINTAINING SAID ELECTRODES IN PRESSURE CONTACT WITH SAID SEMICONDUCTOR COMPONENT; A HOUSING ENCLOSING SAID SEMICONDUCTOR COMPONENT, SAID ELECTRODES AND SAID PRESSURE MEANS IN GASTIGHT MANNER, SAID HOUSING HAVING PORTIONS WITH GOOD THERMAL ELECTRICAL CONDUCTING CHARACTERISTICS AND SAID PRESSURE MEANS PRESSING SAID SEMICONDUCTOR COMPONENT AND SAID ELECTRODES TO PORTIONS OF SAID HOUSING; ELECTRICAL INSULATING MEANS ELECTRICALLY INSULATING THE PORTIONS OF THE HOUSING WHICH ARE IN THERMAL AND ELECTRICAL CONTACT WITH ONE OF SAID ELECTRODES FROM THE PORTION OF SAID HOUSING WHICH IS IN THERMAL AND ELECTRICAL CONTACT WITH THE OTHER OF SAID ELECTRODES WHEREBY AT LEAST ONE OF SAID ELECTRODES IS HELD IN ELECTRICAL AND THERMAL CONTACT UNDER PRESSURE WITH THE RESPECTIVE PORTION OF SAID HOUSING UNBONDED AND BY PRESSURE ONLY; AND A CONTACT MEMBER POSITIONED BETWEEN SAID ONE OF SAID ELECTRODES AND SAID PORTION OF SAID HOUSING AND HELD IN ELECTRICAL AND THERMAL CONTACT UNDER PRESSURE BETWEEN SAID ONE OF SAID ELECTRODES AND SAID PORTION OF SAID HOUSING, SAID CONTACT MEMBER COMPRISING SINTERED MATERIAL HAVING GOOD THERMAL AND ELECTRICAL CONDUCTIVITY CHARACTERISTICS AND A POROSITY OF 2 TO 40 PERCENT, SAID CONTACT MEMBER COMPRISING LUBRICATING MATERIAL SELECTED FROM THE GROUP CONSISTING OF GRAPHITE, MOLYBDEN (IV) SULPHIDE AND TUNGSTEN SELENIDE.
Claim 3
Dependent Claim
221 words
A semiconductor device comprising a semiconductor component having two electrodes; pressure means for maintaining said electrodes in pressure contact with said semiconductor component; a housing enclosing said semiconductor component, said electrodes and said pressure means in gas-tight manner, said housing having portions with good thermal electrical conducting characteristics and said pressure means pressing said semiconductor component and said electrodes to portions of said housing; electrical insulating means electrically insulating the portions of the housing which are in thermal and electrical contact with one of said electrodes from the portion of said housing which is in thermal and electrical contact with the other of said electrodes whereby at least one of said electrodes is held in electrical and thermal contact under pressure with the respective portion of said housing unbonded and by pressure only; and a contact member positioned between said one of said electrodes and said portion of said housing and held in electrical and thermal contact under pressure between said one of said electrodes and said portion of said housing, said contact member comprising sintered material having good thermal and electrical conductivity characteristics and a porosity of 2 to 40 percent, said contact member comprising a sintered disc having two layers, one of which comprises a lubricatIng material of the group consisting of graphite, molybdenum (IV) sulphide and tungsten selenide.
Claim 4
Dependent Claim
221 words
A semiconductor device comprising a semiconductor component having two electrodes; pressure means for maintaining said electrodes in pressure contact with said semiconductor component; a housing enclosing said semiconductor component, said electrodes and said pressure means in gas-tight manner, said housing having portions with good thermal electrical conducting characteristics and said pressure means pressing said semiconductor component and said electrodes to portions of said housing; electrical insulating means electrically insulating the portions of the housing which are in thermal and electrical contact with one of said electrodes from the portion of said housing which is in thermal and electrical contact with the other of said electrodes whereby at least one of said electrodes is held in electrical and thermal contact under pressure with the respective portion of said housing unbonded and by pressure only; and a contact member positioned between said one of said electrodes and said portion of said housing and held in electrical and thermal contact under pressure between said one of said electrodes and said portion of said housing, said contact member comprising sintered material having good thermal and electrical conductivity characteristics and a porosity of 2 to 40 percent, said contact member comprising a sintered disc having two layers, one of which comprises a lubricatIng material of the group consisting of graphite, molybdenum (IV) sulphide and tungsten selenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-30 | 1978-07-01 | 1978-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-30 | 1982-07-01 | 1982-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-30 | 1986-07-01 | 1986-12-31 | $7700.00 | Window Closed / Lapsed |