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US3856591A
Expired / Lapsed
US
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Method for making beam lead device
Assignee: RCA Corp
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Filing: 1973-06-25
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Granted: 1974-12-24
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Expires: 1993-06-25
Abstract
Abstract A beam lead device which can be made extremely thin and with an extremely narrow cross sectional area is presented. The beam lead device has elongated metal contacts on its top and bottom surfaces which overhang the surfaces and which are angularly disposed from one another so as to form an X. Also presented is the method for making such a beam lead device which includes the steps of preparing an appropriately-doped piece of semiconductor material, depositing elongated metal contacts upon the top and bottom surfaces of the semiconductor material, and then etching through the semiconductor material with its portions of the top and bottom contacts which intersect one another acting as a mask and protecting the semiconductor device during the etching procedure. The disclosed method of forming a beam lead device eliminates critical alignment of masks and also provides a simplified method of making such a device.
Inventors
- 👤 L Napoli
- 👤 J Hughes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:30
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D99/00; H10P; H10P95/00; H10W99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/928; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
108 words
THE METHOD OF MAKING A SEMICONDUTOR DEVICE COMPRISING THE STEP OF: A. PROVIDING AN APPROXIMATELY DOPED PIECE OF SEMICONDUCTOR MATERIAL HAVING A FIRST SIDE AND A SECOND SIDE, B. DEPOSING A FIRST SET OF ELONGATED METAL CONTACTS UPON SAID FIRST SIDE OF SAID SEMICONDUCTOR MATERIAL; C. DEPOSITING A SECOND SET OF ELONGATED METAL CONTACTS UPON SAID SECOND SIDE OF SAID SEMICONDUCTOR MATERIAL, SAID SECOND SET OF ELONGATED METAL CONTACTS CROSSING SAID FIRST SET OF ELONGATED METAL CONTACTS; AND D. ETCHING SAID SEMICONDUCTOR MATERIAL THEREBY REMOVING ALL OF SAID SEMICONDUCTOR MATERIAL OTHER THAN THAT WHICH IS DISPOSED BETWEEN SAID FIRST SET AND SAID SECOND SET OF ELONGATED METAL CONTACTS.
Claim 2
Independent Claim
108 words
THE METHOD OF MAKING A SEMICONDUTOR DEVICE COMPRISING THE STEP OF: A. PROVIDING AN APPROXIMATELY DOPED PIECE OF SEMICONDUCTOR MATERIAL HAVING A FIRST SIDE AND A SECOND SIDE, B. DEPOSING A FIRST SET OF ELONGATED METAL CONTACTS UPON SAID FIRST SIDE OF SAID SEMICONDUCTOR MATERIAL; C. DEPOSITING A SECOND SET OF ELONGATED METAL CONTACTS UPON SAID SECOND SIDE OF SAID SEMICONDUCTOR MATERIAL, SAID SECOND SET OF ELONGATED METAL CONTACTS CROSSING SAID FIRST SET OF ELONGATED METAL CONTACTS; AND D. ETCHING SAID SEMICONDUCTOR MATERIAL THEREBY REMOVING ALL OF SAID SEMICONDUCTOR MATERIAL OTHER THAN THAT WHICH IS DISPOSED BETWEEN SAID FIRST SET AND SAID SECOND SET OF ELONGATED METAL CONTACTS.
Claim 3
Dependent Claim
75 words
The method of claim 1 comprising the additional steps of depositing a protective layer over said first set of elongated metal contacts following said step of depositing said first set of elongated metal contacts and etching away said protective layer prior to said step of etching said semiconductor material and thereby removing all of said semiconductor material other than that which is disposed between said first set and said second set of elongated metal contacts.
Claim 4
Dependent Claim
44 words
The method of claim 2 wherein said protective layer comprises a metallic layer which is approximately the same thickness as the thickness of said elongated metal contacts and consists of a metal of a type different from that used in said elongated metal contact.
Claim 5
Dependent Claim
54 words
The method of claim 3 comprising the additional steps of depositing a handle material onto said protective material, said handle material being thick relative to said protective material and consisting of a different type of material than said handle material and removing said handle material prior to the step of remoVing said protective material.
Claim 6
Dependent Claim
19 words
The method of claim 4 wherein said handle material consists of copper and said protective material consists of aluminum.
Claim 7
Dependent Claim
93 words
The method of claim 2 wherein the aluminum of said second set of elongated metal contacts relative to said first set of elongated metal contacts is accomplished by the additional step of etching away a portion of said semiconductor material to expose some of the members of the first set of elongated metal contacts embedded within said protective material and aligning a mask over said exposed members of said first set of elongated metal contacts whereby the mask will be aligned over the unexposed members of said first set of elongated metal contacts.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-23 | 1978-06-24 | 1978-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-23 | 1982-06-24 | 1982-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-23 | 1986-06-24 | 1986-12-24 | $7700.00 | Window Closed / Lapsed |