Patent US3856557A successfully refreshed from Google Patents.
US3856557A
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Process for forming a manganese bismuthide film
Assignee: Fujitsu Services Ltd
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Filing: 1972-10-02
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Granted: 1974-12-24
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Expires: 1992-10-02
Abstract
Abstract A process for producing a manganese bismuthide layer on a substrate in which manganese and bismuth are vacuum deposited upon a substrate using high performance vacuum apparatus. The deposited materials are enclosed by an air impervious layer produced by a second vacuum depositioning stage using less sophisticated vacuum apparatus. The manganese and bismuth are then converted to manganese bismuthide by heat treatment which latter, because of the impervious layer, can be carried out in air.
Inventors
- 👤 W Cuttell
- 👤 N Truman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:14
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/14; C23C14/58; C23C14/5806; C23C14/5893
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
109 words
A PROCESS FOR THE FORMATION OF A FILM OF INTERMETALLIC MANGANESE BISMUTHIDE ON A SUBSTRATE COMPRISING THE STEPS OF; DEPOSITING UNDER VACUUM AT A FIRST PRESSURE LEVEL MANGANESE AND BISMUTH ON TO THE SAME REGION OF THE SUBSTRATE; DEPOSITING UNDER A VACUUM AT A SECOND PRESSURE HIGHER THAN THE FIRST LEVEL AN AIR IMPERVIOUS LAYERS WICH IS CHEMICALLY INERT TO THE MANGANESE AND BISMUTH TO ENCAPSULATE THE MANGANESE AND THE BISMUTH; TRANSFERRING THE SUBSTRATE TO A HEATING ZONE, AND CONVERTING THE MANGANESE AND BISMUTH INTO AN INTERMETALLIC MANGANESE BISMUTHIDE BY HEATING THE MANGANESE AND BISMUTH UNDER AMBIENT PRESSURE CONDITIONS FOR AT LEAST 2 HOURS AT ATEMPERTURE OF APPROXIMATELY 200*C.
Claim 2
Dependent Claim
109 words
A PROCESS FOR THE FORMATION OF A FILM OF INTERMETALLIC MANGANESE BISMUTHIDE ON A SUBSTRATE COMPRISING THE STEPS OF; DEPOSITING UNDER VACUUM AT A FIRST PRESSURE LEVEL MANGANESE AND BISMUTH ON TO THE SAME REGION OF THE SUBSTRATE; DEPOSITING UNDER A VACUUM AT A SECOND PRESSURE HIGHER THAN THE FIRST LEVEL AN AIR IMPERVIOUS LAYERS WICH IS CHEMICALLY INERT TO THE MANGANESE AND BISMUTH TO ENCAPSULATE THE MANGANESE AND THE BISMUTH; TRANSFERRING THE SUBSTRATE TO A HEATING ZONE, AND CONVERTING THE MANGANESE AND BISMUTH INTO AN INTERMETALLIC MANGANESE BISMUTHIDE BY HEATING THE MANGANESE AND BISMUTH UNDER AMBIENT PRESSURE CONDITIONS FOR AT LEAST 2 HOURS AT ATEMPERTURE OF APPROXIMATELY 200*C.
Claim 3
Dependent Claim
97 words
A process for the formation of a manganese bismuthide film on a substrate comprising the steps of depositing under vacuum at a pressure of at least 10 8 torr manganese and bismuth on to the substrate; depositing an air impervious layer of silicon monoxide over the manganese and bismuth under vacuum at pressure of 10 5 torr to 10 8 torr; transferring the substrate into a heating zone and converting the manganese and bismuth to an intermetallIc manganese bismuthide by heating the manganese and bismuth under ambient pressure conditions for at least two hours at approximately 200*c.
Claim 4
Dependent Claim
97 words
A process for the formation of a manganese bismuthide film on a substrate comprising the steps of depositing under vacuum at a pressure of at least 10 8 torr manganese and bismuth on to the substrate; depositing an air impervious layer of silicon monoxide over the manganese and bismuth under vacuum at pressure of 10 5 torr to 10 8 torr; transferring the substrate into a heating zone and converting the manganese and bismuth to an intermetallIc manganese bismuthide by heating the manganese and bismuth under ambient pressure conditions for at least two hours at approximately 200*c.
Claim 5
Dependent Claim
30 words
A process as claimed in claim 2, in which the manganese and bismuth are applied as separate films with a combined thickness within the range 600 to 1,000 Angstrom units.
Claim 6
Dependent Claim
33 words
A process as claimed in claim 3, in which the quantities of bismuth and manganese deposited are such that the relative thicknesses of the bismuth and manganese films are in the range 2.8-3:1.
Claim 7
Dependent Claim
33 words
A process as claimed in claim 2, in which the manganese and bismuth are so deposited as to provide a single film having a thickness within the range 600 to 1,000 Angstrom Units.
Claim 8
Dependent Claim
23 words
A process as claimed in claim 2, in which the air impervious layer has a thickness of the order of 600 Angstrom Units.
Claim 9
Dependent Claim
43 words
A process as claimed in claim 2, in which after the heating stage the extent of conversion to manganese bismuthide is examined in polarised light and in the event of incomplete conversion the bismuth and manganese is subjected to a further heating stage.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-23 | 1978-06-24 | 1978-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-23 | 1982-06-24 | 1982-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-23 | 1986-06-24 | 1986-12-24 | $7700.00 | Window Closed / Lapsed |