Patent US5867083A successfully refreshed from Google Patents.
Patent US3854992A successfully refreshed from Google Patents.
US3854992A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for depositing electrically conductive indium oxide coatings on a substrate
Assignee: RCA Corp
•
Filing: 1973-03-15
•
Granted: 1974-12-17
•
Expires: 1993-03-15
Abstract
Abstract The indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione is volatilized in a heated carrier gas stream and brought into contact with a preheated substrate to be coated in an atmosphere containing oxygen or water. The process is particularly applicable to the deposition of indium oxide on glass vidicon faceplates.
Inventors
- 👤 J Kane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:26
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/407; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/245; H; H01; H01B; H01B1/00; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/215; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/152
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
72 words
A PROCESS OF DEPOSITING A FILM OF INDIUM OXIDE ON AN INERT SUBSTRATE THAT DOES NOT DECOMPOSE DURING DEPOSITION OF SAID FILM WHICH COMPRISES A. VAPORIZING THE INDIUM CHELATE OF 2,2,6,6TETRAMETHYLHEPTANE-3,5-DIONE AT A TEMPERATURE OF FROM ABOUT 180*:250*C., B. HEATING SAID SUBSTRATE WITH THE CHELATE VAPOR IN AN 350*-550*C., AND C. CONTACTING SAID SUBSTRATE WITH THE CHELATE VAPOR IN AN OXYGEN-CONTAINING OR WATER-CONTAINING ATMOSPHERE UNTIL A FILM OF INDIUM OXIDE IS FORMED.
Claim 2
Dependent Claim
72 words
A PROCESS OF DEPOSITING A FILM OF INDIUM OXIDE ON AN INERT SUBSTRATE THAT DOES NOT DECOMPOSE DURING DEPOSITION OF SAID FILM WHICH COMPRISES A. VAPORIZING THE INDIUM CHELATE OF 2,2,6,6TETRAMETHYLHEPTANE-3,5-DIONE AT A TEMPERATURE OF FROM ABOUT 180*:250*C., B. HEATING SAID SUBSTRATE WITH THE CHELATE VAPOR IN AN 350*-550*C., AND C. CONTACTING SAID SUBSTRATE WITH THE CHELATE VAPOR IN AN OXYGEN-CONTAINING OR WATER-CONTAINING ATMOSPHERE UNTIL A FILM OF INDIUM OXIDE IS FORMED.
Claim 3
Dependent Claim
76 words
A process of depositing a film of indium oxide on an inert substrate that does not decompose during deposition of said film which comprises a. heating said substrate to about 350*-550* C., b. heating the indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione in a stream of an inert carrier gas to about 180*-250* C. and c. contacting the carrier gas-chelate gas stream with said substrate in an oxygen-containing or water-containing atmosphere until a film of indium oxide is formed.
Claim 4
Dependent Claim
76 words
A process of depositing a film of indium oxide on an inert substrate that does not decompose during deposition of said film which comprises a. heating said substrate to about 350*-550* C., b. heating the indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione in a stream of an inert carrier gas to about 180*-250* C. and c. contacting the carrier gas-chelate gas stream with said substrate in an oxygen-containing or water-containing atmosphere until a film of indium oxide is formed.
Claim 5
Dependent Claim
17 words
A process according to claim 2 wherein the carrier gas-chelate gas stream temperature is maintained at 200*-250*C.
Claim 6
Dependent Claim
16 words
A process according to claim 3 wherein said substrate temperature is maintained at about 400*-500* C.
Claim 7
Dependent Claim
17 words
A process according to claim 4 wherein said substrate is maintained at a temperature of 425*-450* C.
Claim 8
Dependent Claim
18 words
A process according to claim 5 wherein said substrate is glass having a melting point above 450* C.
Claim 9
Dependent Claim
86 words
A process of depositing transparent, uniform, electrically conductive films of indium oxide on a glass vidicon faceplate which comprises a. vaporizing the indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione in a stream of an inert carrier gas at a temperature of from about 200*-250* C., b. heating the faceplate to a temperature of about 425*-450* C., and c. contacting the gas stream with the faceplate in the presence of oxygen or water for from about 5-15 minutes, so as to form a layer of indium oxide on the faceplate.
Claim 10
Dependent Claim
86 words
A process of depositing transparent, uniform, electrically conductive films of indium oxide on a glass vidicon faceplate which comprises a. vaporizing the indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione in a stream of an inert carrier gas at a temperature of from about 200*-250* C., b. heating the faceplate to a temperature of about 425*-450* C., and c. contacting the gas stream with the faceplate in the presence of oxygen or water for from about 5-15 minutes, so as to form a layer of indium oxide on the faceplate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-16 | 1978-06-17 | 1978-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-16 | 1982-06-17 | 1982-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-16 | 1986-06-17 | 1986-12-17 | $7700.00 | Window Closed / Lapsed |