Semiconductor circuit

Claim 2

A semiconductor circuit, comprising: a first field-effect transistor of the N-channel type and a second field-effect transistor of the P-channel type each of which has a gate, a source, a drain and a substrate; an input circuit which includes at least one transistor adapted to effect switching in response to an input signal, and which has an input terminal for coupling said input signal to said transistor and first and second output terminals; a capacitor, one terminal of which is connected to said drain of said first transistor; means for coupling said drain of said first transistor to the first output terminal of said input circuit; means for connecting said drain of said second transistor to the second output terminal of said input circuit; a first voltage source for supplying a relatively low voltage, which is commonly connected to said source and substrate of said first transistor; pulse supply means which is connected to said gates of said first and second transistors, and which supplies predetermined clock pulses thereto; a second voltage source for supplying a relatively high voltage, which is commonly connected to said source and substrate of said second transistor; at least one input source which supplies the input signal to said input terminal of said input circuit; and means for connecting the other terminal of said capacitor to said second voltage source.

Claim 3

The semiconductor circuit according to claim 1, wherein said pulse supply means comprises a first pulse source which is connected to said gate of said first transistor and which supplies pulses of a predetermined period, and a second pulse source which is connected to said gate of said second transistor and which supplies pulses having the same period as said pulses of said first pulse source and being shifted in time with respect thereto.

Claim 4

The semiconductor circuit accOrding to claim 1, wherein said input circuit comprises a P-channel field-effect transistor having a gate, a source, a drain and a substrate, and wherein said gate thereof is connected to said input terminal, said source thereof is connected to said drain of said second field-effect transistor, said drain thereof is connected to said drain of said first field-effect transistor, and said substrate is connected to said second voltage source.

Claim 5

A semiconductor circuit according to claim 1, wherein said input circuit comprises a plurality of P-channel field-effect transistors each having a gate, a source, a drain and a substrate, and wherein the gates thereof are connected to a respective plurality of different input sources, said sources are commonly connected to said drain of said second transistor, said drains are commonly connected to said drain of said first transistor, and said substrates are commonly connected to said second voltage source.

Claim 6

A semiconductor circuit, comprising: a first field-effect transistor of the N-channel type and a second field-effect transistor of the P-channel type each of which has a gate, a source, a drain and a substrate; an input circuit which includes at least one transistor adapted to effect switching in response to an input signal, and which has an input terminal for supplying said input signal to said transistor and first and second output terminals; a capacitor, one terminal of which is connected to said drain of said first transistor; first connection means for connecting said drain of said first transistor to said drain of said second transistor; a first voltage source for supplying a relatively low voltage which is commonly connected to said source and substrate of said first transistor; second connection means for connecting said source of said second transistor to said first output terminal of said input circuit; a second voltage source for supplying a relatively high voltage, which is connected to said second output terminal of said input circuit, said substrate of said second transistor and the other terminal of said capacitor; pulse supply means, connected to said gates of said first and second transistors, for supplying predetermined clock pulses; and at least one input source which is connected to said input terminal of said input circuit, and which supplies the input signal thereto.

Claim 7

A semiconductor circuit, comprising: a first field-effect transistor of the N-channel type and a second field-effect transistor of the P-channel type each of which has a gate, a source, a drain and a substrate; an input circuit which includes at least one transistor adapted to effect switching in response to an input signal, and which has an input terminal for supplying said input signal to said transistor and first and second output terminals; a capacitor, one terminal of which is connected to said drain of said first transistor; first connection means for connecting said drain of said first transistor to said drain of said second transistor; a first voltage source for supplying a relatively low voltage which is commonly connected to said source and substrate of said first transistor; second connection means for connecting said source of said second transistor to said first output terminal of said input circuit; a second voltage source for supplying a relatively high voltage, which is connected to said second output terminal of said input circuit, said substrate of said second transistor and the other terminal of said capacitor; pulse supply means, connected to said gates of said first and second transistors, for supplying predetermined clock pulses; and at least one input source which is connected to said input terminal of said input circuit, and which supplies the input signal thereto.

Claim 8

The semiconductor circuit according to claim 5, wherein said pulse supply means comprises a first pulse source which is connected to said gate of said first transistor and which supplies pulses of a predetermined period, and a second pulse source which is connected to said gate of said second transistor and which supplies pulses having the same period as said pulses of said first pulse source and being shifted in time with respect thereto.

Claim 9

The semiconductor circuit according to claim 5, wherein said input circuit comprises a plurality of third field-effect transistors of the P-channel type each having a gate, a source, a drain and a substrate, and wherein the respective gates thereof are connected to the corresponding input sources, said drains thereof are commonly connected to said source of said second transistor, and said sources and substrates thereof are commonly connected to said second voltage source.

Claim 10

The semiconductor circuit according to claim 6, wherein the pulses of said second pulse source are of a polarity opposite to those of said first source.

Claim 11

A semiconductor circuit comprising: a first field-effect transistor of a predetermined conductivity type channel, having a gate, a source, a drain and a substrate; a second field-effect transistor of an opposite conductivity type channel with respect to that of said first field-effect transistor, having a gate, a source, a drain and a substrate; an input circuit which includes at least one transistor adapted to effect switching in response to an input signal and which has an input terminal for cOupling said input signal to said transistor and first and second output terminals; first connection means for connecting one of said source and drain of said second field-effect transistor to one of said output terminals of said input circuit to thus form a first series circuit; second connection means for connecting said drain of said first field-effect transistor to one end of said first series circuit to thus form a second series circuit; first voltage supply means being connected to said source and substrate of said first field-effect transistor; second voltage supply means being connected to the other end of said first series circuit; capacitor means, one terminal of which is connected to said drain of said first field-effect transistor, the other terminal of which is connected to said second voltage supply means, for charging a voltage from said first voltage supply means through said first field-effect transistor and discharging stored charge through said first series circuit; pulse supply means which is connected to said gates of said first and second field-effect transistors and which supplies predetermined clock pulses thereto; input supply means for supplying said input signal to said input terminal of said input circuit; and third connection means for connecting said substrate of said second field-effect transistor to said second voltage supply means.

Claim 12

A semiconductor circuit comprising: a first field-effect transistor of a predetermined conductivity type channel, having a gate, a source, a drain and a substrate; a second field-effect transistor of an opposite conductivity type channel with respect to that of said first field-effect transistor, having a gate, a source, a drain and a substrate; an input circuit which includes at least one transistor adapted to effect switching in response to an input signal and which has an input terminal for cOupling said input signal to said transistor and first and second output terminals; first connection means for connecting one of said source and drain of said second field-effect transistor to one of said output terminals of said input circuit to thus form a first series circuit; second connection means for connecting said drain of said first field-effect transistor to one end of said first series circuit to thus form a second series circuit; first voltage supply means being connected to said source and substrate of said first field-effect transistor; second voltage supply means being connected to the other end of said first series circuit; capacitor means, one terminal of which is connected to said drain of said first field-effect transistor, the other terminal of which is connected to said second voltage supply means, for charging a voltage from said first voltage supply means through said first field-effect transistor and discharging stored charge through said first series circuit; pulse supply means which is connected to said gates of said first and second field-effect transistors and which supplies predetermined clock pulses thereto; input supply means for supplying said input signal to said input terminal of said input circuit; and third connection means for connecting said substrate of said second field-effect transistor to said second voltage supply means.

Claim 13

A semiconductor circuit according to claim 9, wherein said first and second field-effect transistors are of N-channel type and P-channel type, respectively, and wherein said source and substrate of said first field-effect transistor are connected to said first voltage supply said second field-effect transistor is connected to said second voltage supply means for supplying a relatively high voltage.

Claim 14

A semiconductor circuit comprising: at least one multiple transistor circuit having a first field-effect transistor of a predetermined conductivity type channel, having a gate, a source, a drain and a substrate; a second field-effect transistor of an opposite conductivity type channel with respect to that of said first field-effect transistor, having a gate, a source, a drain and a substrate; an input circuit which includes at least one transistor adapted to effect switching in response to an input signal and which has an input terminal for coupling said input signal to said transistor and first and second output terminals; first connection means for connecting one of said source and drain of said second field-effect transistor to one of said output terminals of said input circuit to thus form a first series circuit; second connection means for connecting said drain of said first field-effect transistor to one end of said first series circuit to thus form a second series circuit; first voltage supply means being connected to said source and substrate of said first field-effect transistor; second voltage supply means being connected to the other end of said first series circuit; capacitor means, one terminal of which is connected to said drain of said first field-effect transistor, the other terminal of which is connected to said second voltage supply means, for charging a voltage from said first voltage supply means through said first field-effect transistor and discharging stored charge through said first series circuit; pulse supply means which is connected to said gates of said first and second field-effect transistors and which supplies predetermined clock pulses thereto; input supply means for supplying said input signal to said input terminal of said input circuit; and third connection means for connecting said substrate of said second field-effect transistor to said second voltage supply means.

Claim 15

A semiconductor circuit comprising: at least one multiple transistor circuit having a first field-effect transistor of a predetermined conductivity type channel, having a gate, a source, a drain and a substrate; a second field-effect transistor of an opposite conductivity type channel with respect to that of said first field-effect transistor, having a gate, a source, a drain and a substrate; an input circuit which includes at least one transistor adapted to effect switching in response to an input signal and which has an input terminal for coupling said input signal to said transistor and first and second output terminals; first connection means for connecting one of said source and drain of said second field-effect transistor to one of said output terminals of said input circuit to thus form a first series circuit; second connection means for connecting said drain of said first field-effect transistor to one end of said first series circuit to thus form a second series circuit; first voltage supply means being connected to said source and substrate of said first field-effect transistor; second voltage supply means being connected to the other end of said first series circuit; capacitor means, one terminal of which is connected to said drain of said first field-effect transistor, the other terminal of which is connected to said second voltage supply means, for charging a voltage from said first voltage supply means through said first field-effect transistor and discharging stored charge through said first series circuit; pulse supply means which is connected to said gates of said first and second field-effect transistors and which supplies predetermined clock pulses thereto; input supply means for supplying said input signal to said input terminal of said input circuit; and third connection means for connecting said substrate of said second field-effect transistor to said second voltage supply means.

Claim 16

The semiconductor circuit according to claim 11, comprising first and second multiple transistor circuit, with the capacitor of said first multiple transistor circuit being connected to the input suPply means of said second multiple transistor circuit and wherein the pulse supply means of said second multiple transistor circuit supplies pulses having the same period as the pulses of the pulse supply means of said first multiple transistor circuit and being shifted in time with respect thereto.

Claim 17

The semiconductor circuit according to claim 11, wherein the capacitor of said first multiple transistor circuit is connected to one of said first and second voltage supply means and the capacitor of said second multiple transistor circuit is connected to the other of said voltage supply means.

Claim 18

The semiconductor circuit according to claim 13, comprising first and second multiple transistor circuit, with the capacitor of said first multiple transistor circuit being connected to the input supply means of said second multiple transistor circuit and wherein the pulse supply means of said second multiple transistor circuit supplies pulses having the same period as the pulses of the pulse supply means of said first multiple transistor circuit and being shifted in time with respect thereto, and wherein the pulses of the pulse supply means of said second multiple transistor circuit have a polarity opposite to those of the pulse supply means of said first multiple transistor circuit.