Abstract A signal display system having a visual display and a display signal generator in which a semiconductor junction target has a high conductivity P layer, a low conductivity N layer, and a surface layer of insulating material having holes in the shape of letters or other characters. The target semiconductor junction is reverse biased so that when an electron beam striking the target is scanned over the character apertures, it will produce carrier multiplication in the target and an output signal several orders of magnitude greater than a conventional monoscope. The same principle may be used for a camera pickup tube when beam electrons returning from a light sensitive target are multiplied on striking a reverse biased junction target.
In combination: a visual display device; a signal generating device; and means for feeding signals derived from the output of said signal generating device to said visual display device; said signal generating device comprising: a source of electrons and a signal output structure; means for directing electrons from said source to said output structure at velocities which will produce charge carrier multiplication in a semiconductor region of said output structure; and control means interposed between said source and said output structure for varying the portion of said electrons directed toward said output structure which produce charge carrier multiplication in said output structure.
Claim 2
Dependent Claim
102 words
In combination: a visual display device; a signal generating device; and means for feeding signals derived from the output of said signal generating device to said visual display device; said signal generating device comprising: a source of electrons and a signal output structure; means for directing electrons from said source to said output structure at velocities which will produce charge carrier multiplication in a semiconductor region of said output structure; and control means interposed between said source and said output structure for varying the portion of said electrons directed toward said output structure which produce charge carrier multiplication in said output structure.
Claim 3
Dependent Claim
27 words
The combination in accordance with claim 1 wherein said control means comprises means for forming electrons from said source into a beam and for deflecting said beam.
Claim 4
Dependent Claim
20 words
The combination in accordance with claim 2 wherein said output structure comprises a unidirectionally conductive junction comprised of semiconductor material.
Claim 5
Dependent Claim
17 words
The combination in accordance with claim 3 wherein the output voltage signal is developed across said junction.
Claim 6
Dependent Claim
19 words
The combination in accordance with claim 4 wherein means are provided for producing a back bias across said junction.
Claim 7
Dependent Claim
44 words
The combination in accordance with claim 5 wherein said output structure comprises a mask which is impervious to penetration of electrons from said beam; and said mask having differently shaped apertures therein through which electrons from said beam pass to produce charge carrier multiplication.
Claim 8
Dependent Claim
16 words
The combination in accordance with claim 6 wherein said mask comprises a layer of insulating material.
Claim 9
Dependent Claim
46 words
The combination in accordance with claim 7 wherein said junction comprises a first layer of relatively high resistance semiconductor material of one conductivity type and a second layer of material of substantially lower resistivity than said first layer which forms a junction with said first layer.
Claim 10
Dependent Claim
23 words
The combination in accordance with claim 8 wherein said mask is on the opposite side of said second layer from said first layer.
Claim 11
Dependent Claim
18 words
The combination in accordance with claim 9 wherein said first layer is attached to a metallic support electrode.