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US3850685A
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Thin layer semiconductor device
Assignee: Pioneer Corp
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Filing: 1972-10-26
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Granted: 1974-11-26
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Expires: 1992-10-26
Abstract
Abstract A thin layer semiconductor device comprising a mixed crystal, InSb(1 x)Asx composed of indium, In, antimony, Sb, and arsenic, As, in a compounding ratio in which x satisfies the following relationship.
Inventors
- 👤 Y Sakai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:45
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/01; H10N52/80; H10N52/85; Y; Y10; Y10S; Y10S148/00; Y10S148/005; Y10S148/065; Y10S148/122; Y10S148/15; Y10S148/169; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
23 words
A PROCESS FOR PREPARING A THIN LAYER SEMI-CONDUCTOR DEVICE CONSISTING OF A MIXED CRYSTAL OF INSB(1-S)ASS IN WHICH A SATISFIES THE FOLLOWING RELATIONSHIP
Claim 2
Dependent Claim
23 words
A PROCESS FOR PREPARING A THIN LAYER SEMI-CONDUCTOR DEVICE CONSISTING OF A MIXED CRYSTAL OF INSB(1-S)ASS IN WHICH A SATISFIES THE FOLLOWING RELATIONSHIP
Claim 3
Dependent Claim
23 words
The process of claim 1, wherein said vacuum ranges from about 2 X 10 5 torr to about 5 X 10 5 torr.
Claim 4
Dependent Claim
20 words
The process of claim 1, wherein said substrate is heated to a temperature ranging from about 400*C to about 500*C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-25 | 1978-05-27 | 1978-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-25 | 1982-05-27 | 1982-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-25 | 1986-05-27 | 1986-11-26 | $7700.00 | Window Closed / Lapsed |