US3849205A
Expired / Lapsed
US
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Enhancement of solid state recrystallization by induced nucleation
Assignee: Texas Instruments Inc
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Filing: 1973-08-27
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Granted: 1974-11-19
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Expires: 1993-08-27
Abstract
Abstract A method of forming single crystal semiconducting alloys from polycrystalline material is disclosed. One end of a polycrystalline ingot of a ternary alloy such as (Hg, Cd)Te is melted to cause some crystal growth from the liquid at the liquid-solid interface. The crystal growth forms a seed or nucleation site. The crystal structure is then propagated through the rest of the ingot by any suitable solid state crystal growth technique.
Inventors
- 👤 M Brau
- 👤 R Reynolds
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:30
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B13/00; C30B29/00; C30B29/10; C30B29/46; C30B29/48; Y; Y10; Y10S; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
54 words
A METHOD FOR ENHANCEMENT OF SOLID STATE RECRYSTALLIZATION OF A POLYCRYSTALLINE TERNARY SEMICONDUCTOR COMPOUND CONSISTING OF THE STEP OF MELTING A PORTION OF A POLYCRYSTALLINE TENARY SEMICONDUCTOR COMPOUND INGOT AND ALLOWING SINGLE CRYSTAL GROWTH FROM THE LIQUID TO OCCUR AT THE LIQUID-SOLID INTERFACE WHEREBY A SINGLE CRYSTAL MUCLEUS IS FORMED AT THE LIQUID-SOLID INTERFACE.
Claim 2
Independent Claim
54 words
A METHOD FOR ENHANCEMENT OF SOLID STATE RECRYSTALLIZATION OF A POLYCRYSTALLINE TERNARY SEMICONDUCTOR COMPOUND CONSISTING OF THE STEP OF MELTING A PORTION OF A POLYCRYSTALLINE TENARY SEMICONDUCTOR COMPOUND INGOT AND ALLOWING SINGLE CRYSTAL GROWTH FROM THE LIQUID TO OCCUR AT THE LIQUID-SOLID INTERFACE WHEREBY A SINGLE CRYSTAL MUCLEUS IS FORMED AT THE LIQUID-SOLID INTERFACE.
Claim 3
Independent Claim
50 words
A method for enhancement of solid state recrystallization of polycrystalline (Hg,Cd)Te consisting of the step of melting a small portion of a polycrystalline (Hg,Cd)Te ingot and allowing single crystal growth from the liquid to occur at the liquid-solid interface whereby a single crystal nucleus is formed at the liquid-solid interface.
Claim 4
Independent Claim
50 words
A method for enhancement of solid state recrystallization of polycrystalline (Hg,Cd)Te consisting of the step of melting a small portion of a polycrystalline (Hg,Cd)Te ingot and allowing single crystal growth from the liquid to occur at the liquid-solid interface whereby a single crystal nucleus is formed at the liquid-solid interface.
Claim 5
Dependent Claim
59 words
A process for forming single crystal (Hg,Cd)Te material from polycrystalline (Hg,Cd)Te material consisting of the steps of creating a nucleus of single crystal material by melting a small portion of a polycrystalline (Hg,Cd)Te ingot whereby sIngle crystal growth occurs at the liquid solid interface and propagating the crystal structrue through the rest of the ingot by solid state recrystallization.
Claim 6
Dependent Claim
59 words
A process for forming single crystal (Hg,Cd)Te material from polycrystalline (Hg,Cd)Te material consisting of the steps of creating a nucleus of single crystal material by melting a small portion of a polycrystalline (Hg,Cd)Te ingot whereby sIngle crystal growth occurs at the liquid solid interface and propagating the crystal structrue through the rest of the ingot by solid state recrystallization.
Claim 7
Dependent Claim
27 words
A process according to claim 3 including the step of refreezing the melted portion of said ingot after the nucleus is formed at the liquid solid interface.
Claim 8
Dependent Claim
33 words
A process according to claim 3 wherein the polycrystalline material is of uniform predetermined composition, so that the single crystal material formed by solid state recrystallization is of the same uniform predetermined composition.
Claim 9
Dependent Claim
40 words
A process according to claim 3 wherein the solid state recrystallization step consists of maintaining the ingot at an elevated temperature below the melting point of the material whereby the single crystal structure propagates from the nucleus through the ingot.
Claim 10
Dependent Claim
83 words
A process for forming single crystal (Hg,Cd)Te material from polycrystalline (Hg,Cd)Te consisting of the step of maintaining a temperature gradient throughout an ingot of polycrystalline (Hg, Cd)Te such that a small portion of said material is melted at the high temperature end and the temperature continuously decreases to the low temperature end whereby liquid state single crystal growth occurs at the liquid-solid interface forming a nucleation site from which the single crystal structure is propagated through the solid state portion of the ingot.
Claim 11
Dependent Claim
83 words
A process for forming single crystal (Hg,Cd)Te material from polycrystalline (Hg,Cd)Te consisting of the step of maintaining a temperature gradient throughout an ingot of polycrystalline (Hg, Cd)Te such that a small portion of said material is melted at the high temperature end and the temperature continuously decreases to the low temperature end whereby liquid state single crystal growth occurs at the liquid-solid interface forming a nucleation site from which the single crystal structure is propagated through the solid state portion of the ingot.
Claim 12
Dependent Claim
34 words
A process according to claim 7 wherein the polycrystalline material is of uniform predetermined composition, so that the single crystal material formed from the portion which remained solid is of the same uniform composition.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-18 | 1978-05-20 | 1978-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-18 | 1982-05-20 | 1982-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-18 | 1986-05-20 | 1986-11-19 | $7700.00 | Window Closed / Lapsed |