US3622399A
Expired / Lapsed
US
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Method for preparing single crystal pseudobinary alloys
Assignee: Texas Instruments Inc
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Filing: 1968-12-31
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Granted: 1971-11-23
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Expires: 1988-12-31
Abstract
Abstract A method for producing homogeneous single crystal ingots of pseudobinary alloys having high-crystal perfection by rapidly quenching a homogeneous liquid mixture of the desired constituents to produce a homogeneous polycrystalline ingot, then very slowly passing the polycrystalline ingot through a thermal gradient unitl the ingot is at a maximum temperature just below the solidus termperature of the alloy, thus causing the grain boundaries to migrate through the ingot as a result of directional solid-state recrystallization, then slowly coolng the ingot.
Inventors
- 👤 Rowland E Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:14
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/06; C30B29/00; C30B29/10; C30B29/46; C30B29/48
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
30 words
The method defined in claim 1 wherein the alloy comprises at least two compounds, each compound being formed by an element from Group II and an element from Group VI.
Claim 2
Dependent Claim
17 words
The method defined in claim 2 wherein the alloy is comprised of mercury telluride and cadmium telluride.
Claim 3
Dependent Claim
30 words
The method defined in claim 1 wherein the alloy comprises at least two compounds, each compound being formed by an element from Group III and an element from Group V.
Claim 4
Dependent Claim
17 words
The method defined in claim 4 wherein the alloy is comprised of indium arsenide and indium antimonide.
Claim 5
Dependent Claim
30 words
The method defined in claim 1 wherein the alloy comprises at least two compounds, each compound being formed by an element from Group IV and an element from Group VI.
Claim 6
Dependent Claim
17 words
The method defined in claim 6 wherein the alloy is comprised of lead telluride and tin telluride.
Claim 7
Independent Claim
48 words
The method for producing a large, homogeneous, single crystal of a pseudobinary alloy from a highly polycrystalline ingot which comprises slowly moving the ingot relative to a thermal gradient until all of the ingot is heated to approximately the same temperature approaching the solidus temperature of the alloy.
Claim 8
Independent Claim
81 words
The method for producing a large, homogeneous, single crystal of a pseudobinary alloy which comprises: rapidly freezing a liquid mixture comprising about 1.0-(x) mole parts mercury, about (x) mole parts cadmium and greater than 1.0 mole parts tellurium to produce a polycrystalline ingot comprised of crystals of substantially the same average composition, then slowly moving the ingot relative to a thermal gradient until all of the ingot is heated to approximately the same temperature approaching the solidus temperature of the alloy.
Claim 9
Dependent Claim
16 words
The method of claim 9 wherein there is from about 1.00 to about 1.02 parts tellurium.
Claim 10
Dependent Claim
28 words
The method of claim 9 wherein there is about 0.79 mole parts mercury, about 0.21 mole parts cadmium, and between about 1.00 and about 1.02 mole parts tellurium.
References Cited (Backward Citations)
US3410665A
Cited
US3351502A
Cited
US3352722A
Cited
US3496118A
Cited
US3514347A
Cited
US3480554A
Cited
US3468363A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-22 | 1975-05-24 | 1975-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-22 | 1979-05-24 | 1979-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-22 | 1983-05-24 | 1983-11-23 | $7700.00 | Window Closed / Lapsed |