Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
132 words
IN A PHOTOSENSITIVE ELEMENT FOR USE IN THE METHOD OF ELECTROPHOTOGRPAHY WHEREIN A FIRST ELECTRIC FIELD IS APPLIED ACROSS A PHOTOSENSITIVE ELEMENT COMPRISING AN ELECTROCONDUCTIVE LAYER, A PHOTOSENSITIVE PHOTOCONDUCTIVE LAYER CONSISTING OF A SE- TE ALLOY HAVING A PRECENTAGE OF TE THEREIN IN THE RANGE OF 0 TO 25 MOL PERCENT MANIFESTING PERSISTENT INTERNAL POLARIZATION AND A HIGHLY INSULATIVE LAYER INTEGRALLY BONDED TO SAID PHOTOSENSITIVE PHOTOCONDUCTIVE LAYER TO DEPOSIT A CHARGE OF ONE POLARITY ON THE SURFACE OF SAID HIGHLY INSULATIVE LAYER, AND A SECOND ELECTRIC FIELD IS APPLIED ACROSS SAID PHOTOSENSITIVE ELEMENT TO DEPOSIT A CHARGE OF SAID OPPOSITE POLARITY ON THE SURFACE OF SAID HIGHLY INSULATIVE LAYER CONCURRENTLY WITH PROJECTION OF A LIGHT IMAGE UPON SAID PHOTOSENSITIVE ELEMENT WHEREBY TO FORM A LATENT IMAGE ON THE SURFACE OF SAID HIGHLY
Claim 2
Dependent Claim
132 words
IN A PHOTOSENSITIVE ELEMENT FOR USE IN THE METHOD OF ELECTROPHOTOGRPAHY WHEREIN A FIRST ELECTRIC FIELD IS APPLIED ACROSS A PHOTOSENSITIVE ELEMENT COMPRISING AN ELECTROCONDUCTIVE LAYER, A PHOTOSENSITIVE PHOTOCONDUCTIVE LAYER CONSISTING OF A SE- TE ALLOY HAVING A PRECENTAGE OF TE THEREIN IN THE RANGE OF 0 TO 25 MOL PERCENT MANIFESTING PERSISTENT INTERNAL POLARIZATION AND A HIGHLY INSULATIVE LAYER INTEGRALLY BONDED TO SAID PHOTOSENSITIVE PHOTOCONDUCTIVE LAYER TO DEPOSIT A CHARGE OF ONE POLARITY ON THE SURFACE OF SAID HIGHLY INSULATIVE LAYER, AND A SECOND ELECTRIC FIELD IS APPLIED ACROSS SAID PHOTOSENSITIVE ELEMENT TO DEPOSIT A CHARGE OF SAID OPPOSITE POLARITY ON THE SURFACE OF SAID HIGHLY INSULATIVE LAYER CONCURRENTLY WITH PROJECTION OF A LIGHT IMAGE UPON SAID PHOTOSENSITIVE ELEMENT WHEREBY TO FORM A LATENT IMAGE ON THE SURFACE OF SAID HIGHLY
Claim 3
Dependent Claim
25 words
The improvement according to claim 1 wherein said photosensitive element is heat treated at a temperature of 65*C for three hours to improve its sensitivity.
Claim 4
Dependent Claim
45 words
The improvement according to claim 1 wherein said first Se-Te alloy contains 40 mol percent of Te and said second Se-Te alloy contains 16 mol percent of Te, and the ratio of said first alloy to said second alloy in said interfacial layer is 1:2.
Claim 5
Dependent Claim
42 words
The improvement according to claim 1 wherein said first alloy contains 40 mol percent of Te and said second alloy contains 0 mol percent of Te, and the ratio of said first to said second alloy in said interfacial layer is 1:1.
Claim 6
Dependent Claim
42 words
The improvement according to claim 1 wherein said first alloy contains 40 mol percent of Te and said second alloy contains 20 mol percent of Te, and the raTio of said first to said second alloy in said interfacial layer is 1:2.
Claim 7
Dependent Claim
42 words
The improvement according to claim 1 wherein said first alloy contains 30 mol percent of Te and said second alloy contains 16 mol percent of Te, and the ratio of said first to said second alloy in said interfacial layer is 1:1.
Claim 8
Dependent Claim
42 words
The improvement according to claim 1 wherein said first alloy contains 50 mol percent of Te and said second alloy contains 16 mol percent of Te, and the ratio of said first to said second alloy in said interfacial layer is 1:2.
Claim 9
Dependent Claim
57 words
The improvement according to claim 1 wherein said first alloy contains 40 mol percent of Te and said second alloy contains a percentage of Te in the range of 0 to 25 mol percent and the ratio of said first to said second alloy in said interfacial layer is in the range of from 1:1 to 1:2.
Claim 10
Dependent Claim
19 words
The improvement according to claim 1 wherein the thickness of said interfacial layer is from 0.5 to 1 micron.