Abstract 1. A METHOD OF PRODUCING LIGHTLY DOPED P AND NTYPE REGIONS OF SILICON ON AND INSULATING SUBSTRATE COMPRISING FORMING A LAYER OF FIRST TYPE SILICON ON AN INSULATING SUBSTRATE, MASKING A PORTION OF THE SURFACE OF SAID LAYER, FORMING A LAYER OF SECOND TYPE SILICON CONTAINING A CONTROLLED AMOUNT OF COUNTERDOPANT ON AT LEAST THE UNMASKED PORTIONS OF SAID LAYER OF FIRST TYPE SILICON, AND HEATING THE SILICON LAYERS TO A TEMPERATURE AND FOR A TIME SUFFICIENT TO DRIVE A PORTION OF THE COUNTERDOPANT INTO THE UNMASKED REGION OF THE LAYER OF FIRST TYPE SILICON WHEREBY A WAFER IS PRODUCED WHICH HAS LIGHTLY DOPED REGIONS OF P CONDUCTIVITY AND N CONDUCTIVITY AND IT CAN BE USED TO MAKE COMPLEMENTARY TYPES OF PMOS AND NMOS TRANSISTORS.
A METHOD OF PRODUCING LIGHTLY DOPED P AND NTYPE REGIONS OF SILICON ON AND INSULATING SUBSTRATE COMPRISING FORMING A LAYER OF FIRST TYPE SILICON ON AN INSULATING SUBSTRATE, MASKING A PORTION OF THE SURFACE OF SAID LAYER, FORMING A LAYER OF SECOND TYPE SILICON CONTAINING A CONTROLLED AMOUNT OF COUNTERDOPANT ON AT LEAST THE UNMASKED PORTIONS OF SAID LAYER OF FIRST TYPE SILICON, AND HEATING THE SILICON LAYERS TO A TEMPERATURE AND FOR A TIME SUFFICIENT TO DRIVE A PORTION OF THE COUNTERDOPANT INTO THE UNMASKED REGION OF THE LAYER OF FIRST TYPE SILICON WHEREBY A WAFER IS PRODUCED WHICH HAS LIGHTLY DOPED REGIONS OF P CONDUCTIVITY AND N CONDUCTIVITY AND IT CAN BE USED TO MAKE COMPLEMENTARY TYPES OF PMOS AND NMOS TRANSISTORS.
Claim 2
Independent Claim
124 words
A METHOD OF PRODUCING LIGHTLY DOPED P AND NTYPE REGIONS OF SILICON ON AND INSULATING SUBSTRATE COMPRISING FORMING A LAYER OF FIRST TYPE SILICON ON AN INSULATING SUBSTRATE, MASKING A PORTION OF THE SURFACE OF SAID LAYER, FORMING A LAYER OF SECOND TYPE SILICON CONTAINING A CONTROLLED AMOUNT OF COUNTERDOPANT ON AT LEAST THE UNMASKED PORTIONS OF SAID LAYER OF FIRST TYPE SILICON, AND HEATING THE SILICON LAYERS TO A TEMPERATURE AND FOR A TIME SUFFICIENT TO DRIVE A PORTION OF THE COUNTERDOPANT INTO THE UNMASKED REGION OF THE LAYER OF FIRST TYPE SILICON WHEREBY A WAFER IS PRODUCED WHICH HAS LIGHTLY DOPED REGIONS OF P CONDUCTIVITY AND N CONDUCTIVITY AND IT CAN BE USED TO MAKE COMPLEMENTARY TYPES OF PMOS AND NMOS TRANSISTORS.