US3840986A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing micro-electronic circuits
Assignee: Siemens AG
•
Filing: 1972-08-31
•
Granted: 1974-10-15
•
Expires: 1992-08-31
Abstract
Abstract A substrate for a micro-electronic circuit is pierced at select locations thereof, as by a laser beam or an ultrasonic drill and then mounted for rotation about a pair of axes defining an angle therebetween within a vacuum metal vaporization apparatus. A metal, such as gold, is vaporized within the apparatus and is uniformly deposited on the through-hole walls. Galvanic reinforcement of the metal coating on the through-hole walls takes place simultaneously with deposition of select circuit paths.
Inventors
- 👤 M Schmidtke
- 👤 W Ruettenauer
- 👤 R Penzl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:10
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/40; H05K3/4038; H05K3/4076; H05K3/10; H05K3/14; H05K3/146; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49165
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
287 words
A method of substantially simultaneously metallizing exposed surface areas of a main face of a substrate having opposing main faces and wall surfaces of through-holes in said substrate and between said opposing main faces, said wall surfaces of the through-holes being substantially perpendicular to the surfaces of said opposing main faces and said through-holes having a relatively small diameter compatible with micro-electronic circuits; comprising: mounting said substrate on an inner face of a sidewall of a truncated trapezoidally-shaped hollow body so that select surface areas of a main face of said substrate are exposed, said body having an enlarged open base area and enclosed top and sidewalls, said sidewalls being attached to said top wall so as to define an obtuse angle between said top and sidewalls, said top wall being rotatable about a first axis which is perpendicular to the top wall face and said sidewalls being rotatable about a second axis which is perpendicular to the respective sidewall faces; positioning an activatable metal vapor source below said open base area of the trapezoidally shaped hollow body so that an up-facing surface of said metal vapor source is parallel to said top wall of said body; enclosing the space about said trapezoidally shaped hollow body and said metal vapor source; activating said metal vapor source so as to produce radiating metal vapors within said enclosed space; and rotating said top and sidewalls about their respective axes of rotation whereby the through-hole wall surfaces and exposed surface areas of a main face on the substrate are uniformly exposed to said radiating metal vapors and a substantially uniform layer of metal is deposited on said through-hole wall surfaces and on said exposed surface areas of the main face.
Claim 2
Independent Claim
287 words
A method of substantially simultaneously metallizing exposed surface areas of a main face of a substrate having opposing main faces and wall surfaces of through-holes in said substrate and between said opposing main faces, said wall surfaces of the through-holes being substantially perpendicular to the surfaces of said opposing main faces and said through-holes having a relatively small diameter compatible with micro-electronic circuits; comprising: mounting said substrate on an inner face of a sidewall of a truncated trapezoidally-shaped hollow body so that select surface areas of a main face of said substrate are exposed, said body having an enlarged open base area and enclosed top and sidewalls, said sidewalls being attached to said top wall so as to define an obtuse angle between said top and sidewalls, said top wall being rotatable about a first axis which is perpendicular to the top wall face and said sidewalls being rotatable about a second axis which is perpendicular to the respective sidewall faces; positioning an activatable metal vapor source below said open base area of the trapezoidally shaped hollow body so that an up-facing surface of said metal vapor source is parallel to said top wall of said body; enclosing the space about said trapezoidally shaped hollow body and said metal vapor source; activating said metal vapor source so as to produce radiating metal vapors within said enclosed space; and rotating said top and sidewalls about their respective axes of rotation whereby the through-hole wall surfaces and exposed surface areas of a main face on the substrate are uniformly exposed to said radiating metal vapors and a substantially uniform layer of metal is deposited on said through-hole wall surfaces and on said exposed surface areas of the main face.
Claim 3
Dependent Claim
23 words
A method as defined in claim 1, including galvanically depositing a metal layer on the vapor deposited metal coating on the through-hole walls.
Claim 4
Dependent Claim
55 words
A method as defined in claim 2, wherein a photo-lacquer is applied onto select portions of the substrate so as to leave a desired conductor pattern and the metalized through-holes exposed prior to said galvanic deposition and then subjecting said photo-lacquer coated substrate to galvanic deposition so that said photo-lacquer functions as a galvanic mask.
References Cited (Backward Citations)
US2872391A
Cited
US3128205A
Cited
US3583363A
Cited
US3656453A
Cited
US3643625A
Cited
US3598083A
Cited
US3668028A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-10-14 | 1978-04-15 | 1978-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-10-14 | 1982-04-15 | 1982-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-10-14 | 1986-04-15 | 1986-10-15 | $7700.00 | Window Closed / Lapsed |