Patent US3834953A successfully refreshed from Google Patents.
US3834953A
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Semiconductor devices containing as impurities as and p or b and the method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1973-05-23
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Granted: 1974-09-10
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Expires: 1993-05-23
Abstract
Abstract A SEMICONDUCTOR DEVICE COMPRISING A HIGH IMPURITY CONCENTRATION REGION, THE IMPURITY CONSISTING OF ARSENIC AND AT LEAST ONE IMPURITY OTHER THAN ARSENIC. THE NUMBER OF ATOMS OF THE ARSENIC IS SMALLER THAN THAT OF THE OTHER IMPURITY.
Inventors
- 👤 T Kato
- 👤 M Watanabe
- 👤 M Nakamura
- 👤 T Yonezawa
- 👤 M Akatsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:08
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/04; Y10S148/097; Y10S148/151; Y10S148/167
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-09-09 | 1978-03-11 | 1978-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-09-09 | 1982-03-11 | 1982-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-09-09 | 1986-03-11 | 1986-09-10 | $7700.00 | Window Closed / Lapsed |