Method of forming multi-layer interconnections
Abstract
Abstract A method of forming multi-layer interconnections, wherein a porous metal oxide film overlying a metal layer is side-etched by utilizing the larger etching rate of the metal oxide film compared to that of the metal layer, so as to form an electrode interconnection portion of the metal layer which is etched into a gently sloping shape at the ends of its upper surface and its sides corresponding to the side-etched parts of the porous film. Second and higher-order layers of electrode interconnection portions are successively formed in such a manner that an insulating film is interposed between the electrode interconnection portion with the ends of its upper surface and its sides formed into the gently sloping shape and each layer of electrode interconnection portion to be formed over the former electrode interconnection portion.
Inventors
- 👤 A Kikuchi
- 👤 T Agatsuma
Bibliographic Details
Claims Analysis
Total Claims: 9References Cited (Backward Citations)
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