US3828283A
Expired / Lapsed
US
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Method for improving semiconductor surface wave transducer efficiency
Assignee: Westinghouse Electric Corp
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Filing: 1973-07-24
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Granted: 1974-08-06
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Expires: 1993-07-24
Abstract
Abstract An improved semiconductor surface wave transducer and method for improving the efficiency of a surface wave transducer comprising a semiconductor substrate upon which is deposited a thin piezoelectric film which has deposited or fabricated thereon at least one interdigital electrode grid. The method comprises increasing the carrier concentration of the semiconductor substrate to provide at least a plane of electrical conductivity underlying the piezoelectric film and electrode grid having a resistivity of less than 1.0 ohms-cm at 20*C.
Inventors
- 👤 M Daniel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:36
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02566
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
64 words
A method for increasing the efficiency of a surface wave transducer having a semiconductor substrate including thereon at least one thin piezoelectric film and at least one electrode grid deposited on said film, said method comprising: increasing the carrier concentration of the semiconductor substrate to provide at least a plane of conductivity underlying the piezoelectric film having a resistivity of less than 1.0 ohm-cm.
Claim 2
Independent Claim
64 words
A method for increasing the efficiency of a surface wave transducer having a semiconductor substrate including thereon at least one thin piezoelectric film and at least one electrode grid deposited on said film, said method comprising: increasing the carrier concentration of the semiconductor substrate to provide at least a plane of conductivity underlying the piezoelectric film having a resistivity of less than 1.0 ohm-cm.
Claim 3
Dependent Claim
20 words
A method as set forth in claim 1 wherein said carrier concentration is increased in a plane underlying said film.
Claim 4
Dependent Claim
32 words
A method as set forth in claim 1 wherein said carrier concentration is increased in a plane underlying said film and having a configuration conforming to the configuration of the electrode grid.
Claim 5
Dependent Claim
18 words
A method as set forth in claim 1 wherein said resistivity is from about 0.05 to 0.001 ohm-cm.
Claim 6
Dependent Claim
17 words
A method as set forth in claim 1 including the step of grounding said plane of conductivity.
Claim 7
Dependent Claim
60 words
In a surface wave transducer device having a semiconductor substrate including thereon at least one thin piezoelectric film and at least one electrode grid deposited on said film, the improvement comprising: said semiconductor substrate having an increased carrier concentration sufficient to provide at least a plane of conductivity underlying said piezoelectric film having a resistivity of less than 1.0 ohm-cm.
Claim 8
Dependent Claim
60 words
In a surface wave transducer device having a semiconductor substrate including thereon at least one thin piezoelectric film and at least one electrode grid deposited on said film, the improvement comprising: said semiconductor substrate having an increased carrier concentration sufficient to provide at least a plane of conductivity underlying said piezoelectric film having a resistivity of less than 1.0 ohm-cm.
Claim 9
Dependent Claim
18 words
An improvement as set forth in Claim 6 wherein said resistivity is between about 0.05 and 0.001 ohm-cm.
Claim 10
Dependent Claim
34 words
An improvement as set forth in claim 6 wherein said carrier concentration is between 1018 and 5(10)20 cm 3 for a p-type carrier and from 1017 to 5(10)20 cm 3 for an n-type carrier.
Claim 11
Dependent Claim
24 words
An improvement as set forth in claim 6 wherein said plane of conductivity has a configuration conforming to the configuration of said electrode grid.
Claim 12
Dependent Claim
15 words
An improvement as set forth in claim 6 wherein said plane of conductivity is grounded.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-08-05 | 1978-02-04 | 1978-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-08-05 | 1982-02-04 | 1982-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-08-05 | 1986-02-04 | 1986-08-06 | $7700.00 | Window Closed / Lapsed |