Patent US3827002A successfully refreshed from Google Patents.
US3827002A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tunable electroacoustic transducers
Assignee: United States Department of the Navy
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Filing: 1973-05-18
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Granted: 1974-07-30
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Expires: 1993-05-18
Abstract
Abstract A plurality of electroacoustic stripe electrodes are formed as a thin film on the surface of a piezoelectric semiconductor slab. The electrode-semiconductor interface forms a varactor junction. By selectively interconnecting the stripes and applying bias voltages, a tunable electroacoustic transducer or UHF filter is achieved.
Inventors
- 👤 G Chao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:01
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02566; H03H9/46; H03H9/64; H03H9/6403
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
107 words
An electroacoustic surface wave device which comprises: a body of piezoelectric semiconductor material; a ground electrode disposed on a first surface of said material; a plurality of metal stripes disposed parallel to one another on a second surface of said material, said first and second surfaces being parallel, whereby a plurality of Schottky barriers are created at the metal stripe-semiconductor interfaces; means connecting alternate stripes to a first terminal; means connecting the other stripes to a second terminal, said terminals providing connections for creating an acoustic surface wave in said pizoelectric material; and, means for controlling the depth of the depletion regions associated with said Schottky barriers.
Claim 2
Dependent Claim
107 words
An electroacoustic surface wave device which comprises: a body of piezoelectric semiconductor material; a ground electrode disposed on a first surface of said material; a plurality of metal stripes disposed parallel to one another on a second surface of said material, said first and second surfaces being parallel, whereby a plurality of Schottky barriers are created at the metal stripe-semiconductor interfaces; means connecting alternate stripes to a first terminal; means connecting the other stripes to a second terminal, said terminals providing connections for creating an acoustic surface wave in said pizoelectric material; and, means for controlling the depth of the depletion regions associated with said Schottky barriers.
Claim 3
Dependent Claim
17 words
The device of claim 1 wherein each of said metal stripes comprises a thin film of metal.
Claim 4
Dependent Claim
23 words
The device of claim 2 wherein said controlling means comprises at least one source of D.C. bias voltage connected to said metal stripes.
Claim 5
Dependent Claim
35 words
The device of claim 3 wherein the same source of D.C. bias voltage is cOnnected to every metal stripe, whereby a substantially uniform depletion region exists in said semiconductor material under and between said stripes.
Claim 6
Dependent Claim
19 words
The device of claim 3 wherein each metal stripe is connected to a different source of D.C. bias voltage.
Claim 7
Dependent Claim
15 words
The device of claim 2 wherein said body of piezoelectric semiconductor material is a crystal.
Claim 8
Dependent Claim
15 words
The device of claim 6 wherein said body of material is a cadmium sulfide crystal.
Claim 9
Dependent Claim
24 words
The device of claim 2 wherein said body of piezoelectric semiconductor material comprises a thin film of piezoelectric semiconductor material deposited on a substrate.
Claim 10
Dependent Claim
10 words
The device of claim 8 wherein said substrate is glass.
Claim 11
Dependent Claim
114 words
An electroacoustic surface wave device which comprises: a body of piezoelectric semiconductor material; a ground electrode disposed on a first surface of said material; a plurality of thin film metal stripes disposed parallel to one another on a second surface of said material, said first and second surfaces being parallel, whereby a plurality of Schottky barriers are created at the metal stripe-semiconductor interfaces; and, means for controlling the depth of the depletion regions associated with said Schottky barriers, said means comprising a single source of D.C. bias voltage connected to alternate metal stripes and another D.C. source of proper polarity connected to the other stripes to quench the depletion region under said other stripes.
Claim 12
Dependent Claim
114 words
An electroacoustic surface wave device which comprises: a body of piezoelectric semiconductor material; a ground electrode disposed on a first surface of said material; a plurality of thin film metal stripes disposed parallel to one another on a second surface of said material, said first and second surfaces being parallel, whereby a plurality of Schottky barriers are created at the metal stripe-semiconductor interfaces; and, means for controlling the depth of the depletion regions associated with said Schottky barriers, said means comprising a single source of D.C. bias voltage connected to alternate metal stripes and another D.C. source of proper polarity connected to the other stripes to quench the depletion region under said other stripes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-07-29 | 1978-01-28 | 1978-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-07-29 | 1982-01-28 | 1982-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-07-29 | 1986-01-28 | 1986-07-30 | $7700.00 | Window Closed / Lapsed |