Welding method for fabricating large area single crystals and the product thereof
Abstract
Abstract A METHOF OF PERMANTLY "WELDING" TOGETHER SLABS OF SEMICONDUCTOR MATERIALS CUT FROM GROWN CRYSTALS SUCH AS, FOR EXAMPLE, GALLIUM ARSENIDE IS DISCLOSED. A THIN FILM OF ALLOYING MATERIAL SUCH AS, FOR EXAMPLE, GERMANIUM IS FORMED ON ONE EDGE OF A SLAB OF SEMICONDUCTOR MATERIAL TO BE WELDED TO THE EDGE OF ANOTHER SLAB OF THE MATERIAL WITH THE ALLOYING MATERIAL BEARING SLAB EDGE AND THE EDGE OF THE SLAB TO BE WELDED THERETO JUXTAPOSED THE RESULTING SANDWICH IS HEATED IN A SUITABLE ATMOSPHERE SUCH AS, FOR EXAMPLE, A METALLIC VAPOR ATMOSPHERE ABOVE THE EUTIC POINT OF THE SYSTEM TO DISSOLVE THE ALLOYING MAMATERIAL IN THIN DISSOLVED LAYER OF THE SEMICONDUCTOR MATERIAL TO FORM A LIQUID SOLUTION WITH A COMPOSITION DETERMINED BY THE PHASE DIAGRAM OOF THE SYSTEM. THE TEMPERATURE OF THE SYSTEM IS THEN LOWERED TO ROOM TEMPERATURE TOENABLE THE LIQUID SOLUTION TO SOLIDIFY AND GROW ONTO THE SEMICONDUCTOR MATERIAL SLABS TO FORM AN EPITAXIAL LAYER WELDING THE TWO SECTIONS TOGETHER.
Inventors
- 👤 T Chu
Bibliographic Details
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