Method for fabricating polycrystalline structures for integrated circuits
Abstract
Abstract AN IMPROVED INTEGRATED CIRCUIT STRUCTURE IS SHOWN HAVING AN INTEGRAL POLYCRYSTALLINE SILICON MEMBER. THE DOPING OF SUCH POLYCRYSTALLINE SILICON MEMBER CONTROLS THE USAGE OF SUCH MEMBER. WHEN THE POLY SILICON DOPING CHARACTERISTICS EQUAL THAT OF THE LAYER OF SEMICONDUCTOR MATERIAL UPON WHICH IT IS DEPOSITED, IT FORMS A GOOD CONDUCTOR AND IS USABLE AS A CONTACT. WHEN THE POLYCRYSTALLINE SILICON DOPING CHARACTERISTICS ARE AGAIN THE SAME AS THAT OF THE LAYER OF SEMICONDUCTOR MATERIAL UPON WHICH IT IS DEPOSITED BUT OPPOSITE THAT OF THE STRUCTURE TO BE ISOLATED, IT FORMS A GOOD ISOLATION MEMBER. VARIOUS PROCESSES ARE SHOWN FOR ADVANTAGEOUSLY FASHIONING POLYCRYSTALLINE SILICON STRUCTURES.
Inventors
- 👤 J Schoeff
Bibliographic Details
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