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US3819938A Expired / Lapsed US ⏱️ 0.0 years remaining

Opto-electronic transducers for object detection

Assignee: QT Optoelectronics Inc
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Filing: 1973-02-01
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Granted: 1974-06-25
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Expires: 1993-02-01
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Abstract

Abstract A coaxial opto-electronic transducer adapted for fabrication by integrated circuit techniques is disclosed. A semiconductor light source is disposed on a base member. A support member having a void therein is disposed about the semiconductor light source on the base member. A polycrystalline photoresponsive device is located on the support member proximately the void therein. Light emitted by the light source is reflected from an object in the path of propagation of the light and a portion of the reflected light is directed onto the photoresponsive device. Since the polycrystalline photoresponsive device is on the order of 1 mil in thickness, and is spaced from the periphery of the void in the support member, the support member serves to prevent direct illumination of the photoresponsive device by light emitted by the semiconductor light source.

Inventors

  • 👤 W Kornrumpf
  • 👤 J Harnden

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 12:34
CPC Classifications
G; G01; G01S; G01S7/00; G01S7/48; G01S7/481; G01S7/4811; G08; G08B; G08B13/00; G08B13/18; G08B13/181; G08B13/187

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 100 words
An active opto-electronic transducer comprising: a base member; a semiconductor light source disposed on said base member; a support member disposed on said base member, said support member having a void for receiving said semiconductor light source therein; a photoresponsive device disposed on said support member, said photoresponsive device having a height dimension with respect to said support member of less than 1 mil; and unitary optical transmission means for transmitting light from said semiconductor light source toward locations at which objects to be detected are expected and for transmitting light reflected from said objects as to said photoresponsive device.
Claim 2
Dependent Claim 100 words
An active opto-electronic transducer comprising: a base member; a semiconductor light source disposed on said base member; a support member disposed on said base member, said support member having a void for receiving said semiconductor light source therein; a photoresponsive device disposed on said support member, said photoresponsive device having a height dimension with respect to said support member of less than 1 mil; and unitary optical transmission means for transmitting light from said semiconductor light source toward locations at which objects to be detected are expected and for transmitting light reflected from said objects as to said photoresponsive device.
Claim 3
Dependent Claim 50 words
A transducer as claimed in claim 1 wherein: said support member is an annular member disposed about said semiconductor light source; and said photoresponsive device is annular in shape and is disposed on said support member coaxially therewith, said photoresponsive device having a greater minor radius than said support member.
Claim 4
Dependent Claim 54 words
A transducer as claimed in claim 1 wherein: a plurality of said semiconductor light sources are disposed on said base member; said support member has a plurality of said voids therein corresponding in number and position to said semiconductor light sources; and a plurality of said photoresponsive devices are disposed on said support member.
Claim 5
Dependent Claim 27 words
The transducer of claim 3 wherein said photorespOnsive devices are annular in shape and each said photoresponsive device is disposed about a corresponding one of said voids.
Claim 6
Dependent Claim 56 words
The transducer of claim 3 wherein said base member is a thermally conductive member to provide cooling of said semiconductor light sources; and said support member comprises thermally conductive electrically insulating material to provide cooling of said photoresponsive devices and electrical isolation among said photoresponsive devices and between said photoresponsive devices and said semiconductor light sources.
Claim 7
Dependent Claim 30 words
The transducer of claim 5 wherein said base member comprises metal and said support member comprises a material selected from the group consisting of beryllium oxide, boron nitride, and alumina.
Claim 8
Dependent Claim 45 words
The transducer of claim 3 wherein: said unitary optical means comprises unitary optical focusing means for directing light from said semiconductor light sources toward locations at which objects to be detected are expected and for focusing light reflected from said objects onto said photoresponsive devices.
Claim 9
Dependent Claim 19 words
The transducer of claim 7 wherein said unitary optical focusing means is a cylindrical lens having a convex surface.
Claim 10
Dependent Claim 53 words
A transducer as claimed in claim 1 wherein: said base member is a thermally conductive member to provide cooling of said semiconductor light source; and said support member comprises thermally conductive electrically insulating material to provide cooling of said photoresponsive device and electrical isolation between said photoresponsive device and said semiconductor light source.
Claim 11
Dependent Claim 14 words
The transducer of claim 9 wherein said support member is a ceramic support member.
Claim 12
Dependent Claim 21 words
The transducer of claim 10 wherein said ceramic is selected from the group consisting of beryllium oxide, boron nitride, and alumina.
Claim 13
Dependent Claim 14 words
The transducer of claim 9 wherein said photoresponsive device is a polycrystalline photoresponsive device.
Claim 14
Dependent Claim 28 words
A transducer as claimed in claim 1 wherein said support member includes a wafer of monocrystalline silicon and said photoresponsive device comprises an impurity region in said wafer.
Claim 15
Dependent Claim 30 words
A transducer as claimed in claim 1 wherein said support member includes a sapphire substrate having monocrystalline silicon thereon and said photoresponsive device comprises an impurity region in said silicon.
Claim 16
Dependent Claim 57 words
A transducer as claimed in claim 1 including additionally: a plurality of electrical leads connected to said semiconductor light source; and a plurality of electrical leads connected to said photoresponsive device; said leads extending to an edge of said transducer for connection to an edge connector whereby said edge connector fixes the spatial orientation of said transducer.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-06-24 1977-12-24 1978-06-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-06-24 1981-12-24 1982-06-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-06-24 1985-12-24 1986-06-25 $7700.00 Window Closed / Lapsed

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