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US3815045A
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US
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Method of and device for modulating directly a semiconductor laser
Assignee: Hitachi Ltd
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Filing: 1972-10-06
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Granted: 1974-06-04
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Expires: 1992-10-06
Abstract
Abstract A method of modulating directly a semiconductor laser such that a laser beam of one mode-order emitted from the semiconductor laser is converted into that of another mode-order by a pulse current superposed on a bias current flowing through the semiconductor laser and one of said two mode-orders is transmitted selectively through an optical guide, so that the amplitude of the laser beam can be modulated without stopping laser emission and the modulation at high repetition frequencies and with low modulating power can be obtained.
Inventors
- 👤 R Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 09:41
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06209; H01S5/06213; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/065; Y10S148/072
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
228 words
A device for directly modulating a semiconductor laser comprising: a semiconductor injection laser diode having a PN junction, said PN junction emitting a laser beam of one mode-order in response to the injection of a bias current of a level above the laser threshold level; a bias source connected with said laser diode to inject said bias current thereto; a modulating source connected with said laser diode and said bias source to inject and superpose a signal current pulsed on and off according to an information signal to cause said laser beam to hop from one mode order to another mode order; and an optical waveguide, disposed in the path of said emitted laser beam, said optical waveguide being able to transmit only one of said two mode orders, said optical waveguide including a pair of separate portions, said separate portions being arranged in a symmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam correspondinG to one of said two mode orders, and being formed in such a manner that laser beams passing through said separate portions are joined together thereafter, whereby the amplitude of the laser beam emitted from said optical waveguide is an optical signal representative of the information signal pulses imparted to said modulating source and has the odd symmetry field distribution cancelled by said optical waveguide.
Claim 2
Independent Claim
228 words
A device for directly modulating a semiconductor laser comprising: a semiconductor injection laser diode having a PN junction, said PN junction emitting a laser beam of one mode-order in response to the injection of a bias current of a level above the laser threshold level; a bias source connected with said laser diode to inject said bias current thereto; a modulating source connected with said laser diode and said bias source to inject and superpose a signal current pulsed on and off according to an information signal to cause said laser beam to hop from one mode order to another mode order; and an optical waveguide, disposed in the path of said emitted laser beam, said optical waveguide being able to transmit only one of said two mode orders, said optical waveguide including a pair of separate portions, said separate portions being arranged in a symmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam correspondinG to one of said two mode orders, and being formed in such a manner that laser beams passing through said separate portions are joined together thereafter, whereby the amplitude of the laser beam emitted from said optical waveguide is an optical signal representative of the information signal pulses imparted to said modulating source and has the odd symmetry field distribution cancelled by said optical waveguide.
Claim 3
Dependent Claim
22 words
A device for modulating directly a semiconductor laser according to claim 1, wherein said semiconductor injection laser diode has a stripe electrode.
Claim 4
Dependent Claim
27 words
A device for modulating directly a semiconductor laser according to claim 2, wherein said semiconductor injection laser diode is made of a crystal having a double heterojunction.
Claim 5
Dependent Claim
53 words
A device for modulating directly a semiconductor laser according to claim 1, further including a lens system disposed in the path of said emitted laser beam between said laser diode and said optical waveguide to control the field distribution of said emitted laser beam at the light receiving end of said optical waveguide.
Claim 6
Independent Claim
241 words
A device for directly modulating a semiconductor laser comprising: a semiconductor injection laser diode having a PN junction said PN junction emitting a laser beam of one mode-order in response to the injection of a bias current of a level above the laser threshold level; a bias source connected with said laser diode to inject said bias current thereto; a modulating source connected with said laser diode and said bias source to inject and superpose a signal current pulsed on and off according to an information signal to cause said laser beam to hop from one mode-order to another mode-order; and an optical waveguide, disposed in the path of said emitted laser beam, said optical waveguide being able to transmit only one of said two mode-orders, said optical waveguide including a pair of separate portions, said separate portions being arranged in a symmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam corresponding to one of said two mode-orders, and being formed in such a manner that laser beams passing through said separate portions are joined together thereafter, whereby the amplitude of the laser beam emitted from said optical waveguide is an optical signal representative of the information signal pulses imparted to said modulating source; and further comprising means, coupled with said optical waveguide, for producing an optical path difference, so as to cancel the emitted laser beam having an even symmetry field distribution.
Claim 7
Independent Claim
241 words
A device for directly modulating a semiconductor laser comprising: a semiconductor injection laser diode having a PN junction said PN junction emitting a laser beam of one mode-order in response to the injection of a bias current of a level above the laser threshold level; a bias source connected with said laser diode to inject said bias current thereto; a modulating source connected with said laser diode and said bias source to inject and superpose a signal current pulsed on and off according to an information signal to cause said laser beam to hop from one mode-order to another mode-order; and an optical waveguide, disposed in the path of said emitted laser beam, said optical waveguide being able to transmit only one of said two mode-orders, said optical waveguide including a pair of separate portions, said separate portions being arranged in a symmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam corresponding to one of said two mode-orders, and being formed in such a manner that laser beams passing through said separate portions are joined together thereafter, whereby the amplitude of the laser beam emitted from said optical waveguide is an optical signal representative of the information signal pulses imparted to said modulating source; and further comprising means, coupled with said optical waveguide, for producing an optical path difference, so as to cancel the emitted laser beam having an even symmetry field distribution.
Claim 8
Dependent Claim
22 words
A device for directly modulating a semiconductor laser according to claim 5, wherein said semiconductor injection laser diode has a stripe electrode.
Claim 9
Dependent Claim
27 words
A device for directly modulating a semiconductor laser according to claim 6, wherein said semiconductor injection laser diode is made of a crystal having a double heterojunction.
Claim 10
Dependent Claim
53 words
A device for directly modulating a semiconductor laser according to claim 5, further including a lens system disposed in the path of said emitted laser beam between said laser diode and said optical waveguide to control the field distribution of said emitted laser beam at the light receiving end of said optical waveguide.
Claim 11
Independent Claim
203 words
A method for directly modulating a semiconductor injection laser diode comprising the steps of: a. supplying a bias current to said diode to inject a bias current of a level above the laser threshold level, so that the PN junction of said laser diode emits a laser beam of one mode-order; b. superposing a signal current, which is pulsed on and off according to an information signal, on said bias current to cause said laser beam to hop from one mode-order to another mode-order; and c. passing said emitted laser beam through an optical waveguide which is able to transmit only one of said two mode-orders, said optical waveguide having a pair of separate portions, said separate portions being arranged in a syMmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam corresponding to one of said two mode-orders, and being formed in such a manner that laser beams passing through separate portions are joined together thereafter, whereby the amplitude of the emitted laser beam from said optical waveguide is an optical signal representation of the information signal pulses forming said superimposed signal current, and has an odd symmetry field distribution cancelled by said optical waveguide.
Claim 12
Independent Claim
203 words
A method for directly modulating a semiconductor injection laser diode comprising the steps of: a. supplying a bias current to said diode to inject a bias current of a level above the laser threshold level, so that the PN junction of said laser diode emits a laser beam of one mode-order; b. superposing a signal current, which is pulsed on and off according to an information signal, on said bias current to cause said laser beam to hop from one mode-order to another mode-order; and c. passing said emitted laser beam through an optical waveguide which is able to transmit only one of said two mode-orders, said optical waveguide having a pair of separate portions, said separate portions being arranged in a syMmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam corresponding to one of said two mode-orders, and being formed in such a manner that laser beams passing through separate portions are joined together thereafter, whereby the amplitude of the emitted laser beam from said optical waveguide is an optical signal representation of the information signal pulses forming said superimposed signal current, and has an odd symmetry field distribution cancelled by said optical waveguide.
Claim 13
Dependent Claim
30 words
A method of modulating directly a semiconductor laser according to claim 9, wherein said mode-orders are selected from the group consisting of a TE00 mode, TE01 mode and TE02 mode.
Claim 14
Dependent Claim
28 words
A method of modulating directly a semiconductor laser according to claim 9, wherein said current signal is a PCM signal current, whereby said laser beam is pulse-code modulated.
Claim 15
Dependent Claim
59 words
A method for directly modulating a semiconductor injection laser diode according to claim 9, further including the step of d. disposing a lens system in the path of the emitted laser beam between said laser diode and said optical waveguide, to control the field distribution of the emitted laser beam at the light receiving end of said optical waveguide.
Claim 16
Independent Claim
228 words
A method for directly modulating a semiconductor injection laser diode comprising the steps of: a. supplying a bias current to said diode to inject a bias current of a level above the laser threshold level, so that the PN junction of said laser diode emits a laser beam of one mode-order; b. superimposing a signal current, which is pulsed on and off according to an information signal, on said bias current to cause said laser beam to hop from one mode-order to another mode-order; and c. passing said emitted laser beam through an optical waveguide which is able to transmit only one of said two mode-orders, said optical waveguide having a pair of separate portions, said separate portions being arranged in a symmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam corresponding to one of said two mode-orders, and being formed in such a manner that laser beams passing through separate portions are joined together thereafter, whereby the amplitude of the emitted laser beam from said optical waveguide is an optical signal representation of the information signal pulses forming said superimposed signal current; and further including the step of d. disposing means for producing an optical path difference in the path of the emitted laser beam, so as to cancel the emitted laser beam having an even symmetry field distribution.
Claim 17
Independent Claim
228 words
A method for directly modulating a semiconductor injection laser diode comprising the steps of: a. supplying a bias current to said diode to inject a bias current of a level above the laser threshold level, so that the PN junction of said laser diode emits a laser beam of one mode-order; b. superimposing a signal current, which is pulsed on and off according to an information signal, on said bias current to cause said laser beam to hop from one mode-order to another mode-order; and c. passing said emitted laser beam through an optical waveguide which is able to transmit only one of said two mode-orders, said optical waveguide having a pair of separate portions, said separate portions being arranged in a symmetrical manner on opposite sides of the center of the field distribution of said emitted laser beam corresponding to one of said two mode-orders, and being formed in such a manner that laser beams passing through separate portions are joined together thereafter, whereby the amplitude of the emitted laser beam from said optical waveguide is an optical signal representation of the information signal pulses forming said superimposed signal current; and further including the step of d. disposing means for producing an optical path difference in the path of the emitted laser beam, so as to cancel the emitted laser beam having an even symmetry field distribution.
Claim 18
Dependent Claim
32 words
A method for directly modulating a semiconductor injection laser diode according to claim 13, wherein said mode-orders are selected from the group consisting of a TE00 mode, TE01 mode and TE02 mode.
Claim 19
Dependent Claim
30 words
A method for directly modulating a semiconductor injection laser diode according to claim 13, wherein said signal current is a PCM signal current, whereby said laser beam is pulse-code modulated.
Claim 20
Dependent Claim
59 words
A method for directly modulating a semiconductor injection laser diode according to claim 13, further including the step of e. disposing a lens system in the path of the emitted laser beam between said laser diode and said optical waveguide, to control the field distribution of the emitted laser beam at the light receiving end of said optical waveguide.
References Cited (Backward Citations)
US3157726A
Cited
US3680001A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-03 | 1977-12-03 | 1978-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-03 | 1981-12-03 | 1982-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-03 | 1985-12-03 | 1986-06-04 | $7700.00 | Window Closed / Lapsed |